| A 0.6-V 38-nW 9.4-ENOB 20-kS/s SAR ADC in 0.18- CMOS for Medical Implant Devices Z Zhu, Y Liang IEEE Transactions on Circuits and Systems I: Regular Papers 62 (9), 2167-2176, 2015 | 160 | 2015 |
| A 14-b 20-MS/s 78.8 dB-SNDR energy-efficient SAR ADC with background mismatch calibration and noise-reduction techniques for portable medical ultrasound systems Y Liang, C Li, S Liu, Z Zhu IEEE Transactions on Biomedical Circuits and Systems 16 (2), 200-210, 2022 | 70 | 2022 |
| Analysis of DIBL effect and negative resistance performance for NCFET based on a compact SPICE model Y Liang, X Li, SK Gupta, S Datta, V Narayanan IEEE Transactions on Electron Devices 65 (12), 5525-5529, 2018 | 69 | 2018 |
| A 625kHz-BW, 79.3 dB-SNDR second-order noise-shaping SAR ADC using high-efficiency error-feedback structure P Yi, Y Liang, S Liu, N Xu, L Fang, Y Hao IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 859-863, 2021 | 65 | 2021 |
| A 9.1 ENOB 200MS/s asynchronous SAR ADC with hybrid single-ended/differential DAC in 55-nm CMOS for image sensing signals Y Liang, R Ding, Z Zhu IEEE Sensors Journal 18 (17), 7130-7140, 2018 | 58 | 2018 |
| A reconfigurable 12-to-18-Bit dynamic zoom ADC with Pole-optimized technique Y Liang, J Ren, L Chen, H Lan, J Song, S Song, Z Zhu IEEE Transactions on Circuits and Systems I: Regular Papers 70 (5), 1940-1948, 2023 | 49 | 2023 |
| Utilization of negative-capacitance FETs to boost analog circuit performances Y Liang, Z Zhu, X Li, SK Gupta, S Datta, V Narayanan IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27 (12 …, 2019 | 46 | 2019 |
| A 10-Bit 5 MS/s VCO-SAR ADC in 0.18- m CMOS Y Xie, Y Liang, M Liu, S Liu, Z Zhu IEEE Transactions on Circuits and Systems II: Express Briefs 66 (1), 26-30, 2018 | 46 | 2018 |
| Influence of body effect on sample-and-hold circuit design using negative capacitance FET Y Liang, X Li, S George, S Srinivasa, Z Zhu, SK Gupta, S Datta, ... IEEE Transactions on Electron Devices 65 (9), 3909-3914, 2018 | 45 | 2018 |
| Mismatch of ferroelectric film on negative capacitance FETs performance Y Liang, Z Zhu, X Li, SK Gupta, S Datta, V Narayanan IEEE Transactions on Electron Devices 67 (3), 1297-1304, 2020 | 31 | 2020 |
| Lowering area overheads for FeFET-based energy-efficient nonvolatile flip-flops X Li, S George, Y Liang, K Ma, K Ni, A Aziz, SK Gupta, J Sampson, ... IEEE Transactions on Electron Devices 65 (6), 2670-2674, 2018 | 31 | 2018 |
| A time-domain reconfigurable second-order noise shaping ADC with single fan-out gated delay cells Z Yu, Y Liang, H Lan, L Chen, J Song, S Song, Z Zhu IEEE Transactions on Very Large Scale Integration (VLSI) Systems 31 (6), 902-905, 2023 | 21 | 2023 |
| Radio frequency analog-to-digital converters: Systems and circuits review D Li, X Zhao, S Liu, M Liu, R Ding, Y Liang, Z Zhu Microelectronics Journal 119, 105331, 2022 | 18 | 2022 |
| A 0.1–3.5-GHz inductorless noise-canceling CMOS LNA with IIP3 optimization technique R Zhou, S Liu, J Liu, Y Liang, Z Zhu IEEE Transactions on Microwave Theory and Techniques 70 (6), 3234-3243, 2022 | 17 | 2022 |
| SAR ADC architecture with 98.8% reduction in switching energy over conventional scheme Y Liang, Z Zhu, R Ding Analog Integrated Circuits and Signal Processing 84, 89-96, 2015 | 15 | 2015 |
| A 10bit 20 kS/s 17.7 nW 9.1 ENOB reference-insensitive SAR ADC in 0.18 μm CMOS Y Liang, Z Zhu Microelectronics Journal 73, 24-29, 2018 | 14 | 2018 |
| A 5 MHz-BW 71.7-dB SNDR two-step hybrid-domain ADC in 65-nm CMOS Z Yu, Y Liang, S Liu Microelectronics Journal 117, 105253, 2021 | 11 | 2021 |
| A 0.6 V 31 nW 25 ppm/° C MOSFET-only sub-threshold voltage reference Z Zhu Microelectronics journal 66, 25-30, 2017 | 11 | 2017 |
| A 10-bit 300-MS/s asynchronous SAR ADC with strategy of optimizing settling time for capacitive DAC in 65 nm CMOS Y Liang, Z Zhu, R Ding Microelectronics Journal 46 (10), 988-995, 2015 | 11 | 2015 |
| A 1.8‐V 240‐MHz 2.19‐mW Four‐Stage CMOS OTA with a Segmenting Frequency Compensation Technique L Yuhua, Z Zirui, LIU Shubin, LI Dengquan, D Ruixue, ZHU Zhangming Chinese Journal of Electronics 30 (5), 853-860, 2021 | 9 | 2021 |
