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Ha-Jun Sung
Ha-Jun Sung
Samsung Advanced Institute of Technology
Verified email at samsung.com
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Cited by
Year
Bandgap opening in few-layered monoclinic MoTe2
DH Keum, S Cho, JH Kim, DH Choe, HJ Sung, M Kan, H Kang, JY Hwang, ...
Nature Physics 11 (6), 482-486, 2015
10522015
Understanding topological phase transition in monolayer transition metal dichalcogenides
DH Choe, HJ Sung, KJ Chang
Physical Review B 93 (12), 125109, 2016
1182016
Superconducting open-framework allotrope of silicon at ambient pressure
HJ Sung, WH Han, IH Lee, KJ Chang
Physical review letters 120 (15), 157001, 2018
492018
Theoretical exploration of mixed-anion antiperovskite semiconductors M 3 XN (M= Mg, Ca, Sr, Ba; X= P, As, Sb, Bi)
Y Mochizuki, HJ Sung, A Takahashi, Y Kumagai, F Oba
Physical Review Materials 4 (4), 044601, 2020
372020
Graphene Nanoribbons with Atomically Sharp Edges Produced by AFM Induced Self‐Folding
JS Chang, S Kim, HJ Sung, J Yeon, KJ Chang, X Li, S Kim
Small 14 (47), 1803386, 2018
322018
The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2 on α-quartz
HJ Sung, DH Choe, KJ Chang
New Journal of physics 16 (11), 113055, 2014
282014
Semimetallic carbon allotrope with a topological nodal line in mixed sp2-sp3 bonding networks
Ha-Jun Sung, Sunghyun Kim, In-Ho Lee, Kee Joo Chang
NPG Asia Materials 9, e361, 2017
212017
Dopant-tunable ultrathin transparent conductive oxides for efficient energy conversion devices
DY Kang, BH Kim, TH Lee, JW Shim, S Kim, HJ Sung, KJ Chang, TG Kim
Nano-Micro Letters 13, 1-15, 2021
192021
Surface reconstruction and band alignment of nonmetallic perovskites
HJ Sung, Y Mochizuki, F Oba
Physical Review Materials 4 (4), 044606, 2020
162020
Chemical trends of surface reconstruction and band positions of nonmetallic perovskite oxides from first principles
Y Mochizuki, HJ Sung, T Gake, F Oba
Chemistry of Materials 35 (5), 2047-2057, 2023
112023
Tuning Dirac points by strain in MoX 2 nanoribbons (X= S, Se, Te) with a 1T′ structure
HJ Sung, DH Choe, KJ Chang
Physical Chemistry Chemical Physics 18 (24), 16361-16366, 2016
72016
Self-encapsulation of silicene in cubic diamond Si: Topological semimetal in covalent bonding networks
GM Kim, HJ Sung, WH Han, IH Lee, KJ Chang
The Journal of Physical Chemistry C 123 (3), 1839-1845, 2019
52019
Cation-eutaxy-enabled III–V-derived van der Waals crystals as memristive semiconductors
J Bae, J Won, T Kim, S Choi, H Kim, SHV Oh, G Lee, E Lee, S Jeon, ...
Nature materials 23 (10), 1402-1410, 2024
12024
A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor (VCT)/3D DRAM Applications
JE Yang, Y Jang, NR Han, HJ Sung, J Kim, Y Cha, KH Lee, K Jung, ...
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024
12024
Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory
HJ Sung, M Choi, Z Wu, H Chae, S Heo, Y Kang, B Koo, JB Park, W Yang, ...
Advanced Science, 2408028, 2024
12024
SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
W Yang, B Koo, C Kim, K Park, H Sung, D Ahn, C Lee, M Choi
US Patent App. 18/813,539, 2024
2024
Self-selecting memory device having polarity dependent threshold voltage shift characteristics and memory apparatus including the same
Y Kiyeon, D Gu, KOO Bonwon, J Park, S Hajun, D Ahn, Z Wu, ...
US Patent App. 18/594,355, 2024
2024
Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices
M Choi, HJ Sung, B Koo, JB Park, W Yang, Y Kang, Y Park, Y Ham, ...
Advanced Science, 2404035, 2024
2024
First-principles study for the exotic electronic properties of transition metal dichalcogenides and novel C and Si allotropes
HJ Sung
한국과학기술원, 2018
2018
Reduction of Switching Current on GeSbTe Through Atomic Local Structure Engineering with Carbon Co-Doping
YJ Kang, C Park, HJ Sung, D Koo, J Park, K Yang, Y Ham, M Choi, B Koo, ...
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Articles 1–20