| Carbon in silicon: Modeling of diffusion and clustering mechanisms R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ... Journal of applied physics 92, 1582, 2002 | 217 | 2002 |
| MMonCa: an Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion I Martin-Bragado, A Rivera, G Valles, JL Gomez-Selles, MJ Caturla Computer Physics Communications 184 (12), 2703–2710, 2013 | 128 | 2013 |
| Influence of grain boundaries on the radiation-induced defects and hydrogen in nanostructured and coarse-grained tungsten G Valles, M Panizo-Laiz, C González, I Martin-Bragado, ... Acta Materialia 122, 277-286, 2017 | 90 | 2017 |
| Kinetic Monte Carlo simulation for semiconductor processing: A review I Martin-Bragado, R Borges, JP Balbuena, M Jaraiz Progress in Materials Science 92, 1-32, 2018 | 64 | 2018 |
| Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model I Martin-Bragado, V Moroz Applied Physics Letters 95 (12), 123123-123123-3, 2009 | 63 | 2009 |
| Temperature dependence of underdense nanostructure formation in tungsten under helium irradiation G Valles, I Martin-Bragado, K Nordlund, A Lasa, C Björkas, E Safi, ... Journal of Nuclear Materials 490, 108-114, 2017 | 58 | 2017 |
| The influence of high grain boundary density on helium retention in tungsten G Valles, C González, I Martin-Bragado, R Iglesias, JM Perlado, A Rivera Journal of Nuclear Materials 457, 80-87, 2015 | 56 | 2015 |
| Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla Applied Physics Letters 86 (25), 252103-252103-3, 2005 | 47 | 2005 |
| Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla Physical Review B 72 (3), 035202, 2005 | 40 | 2005 |
| Group 16 elements control the synthesis of continuous fibers of carbon nanotubes B Mas, B Alemán, I Dopico, I Martin-Bragado, T Naranjo, EM Pérez, ... Carbon 101, 458-464, 2016 | 38 | 2016 |
| Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films JE Rubio, M Jaraiz, I Martin-Bragado, JM Hernandez-Mangas, J Barbolla, ... Journal of Applied Physics 94 (1), 163-168, 2003 | 37 | 2003 |
| Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon I Martin-Bragado, V Moroz Applied Physics Letters 98, 153111, 2011 | 36 | 2011 |
| Evolution of dislocation loops in iron under irradiation: The impact of carbon D Terentyev, I Martin-Bragado Scripta Materialia 97, 5--8, 2015 | 31 | 2015 |
| Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo I Martin-Bragado, S Tian, M Johnson, P Castrillo, R Pinacho, J Rubio, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006 | 29 | 2006 |
| Understanding Si (111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology I Martin-Bragado, B Sklenard Journal of Applied Physics 112 (2), 2012 | 28 | 2012 |
| Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena I Martin-Bragado, M Jaraiz, P Castrillo, R Pinacho, J Barbolla, ... Physical Review B 68 (19), 195204, 2003 | 28 | 2003 |
| Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population KRC Mok, M Jaraiz, I Martin-Bragado, JE Rubio, P Castrillo, R Pinacho, ... Journal of applied physics 98 (4), 046104-046104-3, 2005 | 27 | 2005 |
| Experimental and computational studies of the influence of grain boundaries and temperature on the radiation-induced damage and hydrogen behavior in tungsten M Panizo-Laiz, P Díaz-Rodríguez, A Rivera, G Valles, I Martín-Bragado, ... Nuclear Fusion 59 (8), 086055, 2019 | 25 | 2019 |
| Substrate orientation dependence on the solid phase epitaxial growth rate of Ge BL Darby, BR Yates, I Martin-Bragado, JL Gomez-Selles, RG Elliman, ... Journal of Applied Physics 113 (3), 2013 | 24 | 2013 |
| From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon I Martin-Bragado, I Avci, N Zographos, M Jaraiz, P Castrillo Solid-State Electronics 52 (9), 1430-1436, 2008 | 24 | 2008 |
Martin JaraizProfessor, Universidad de ValladolidVerified email at ele.uva.es