| Record maximum oscillation frequency in C-face epitaxial graphene transistors Z Guo, R Dong, PS Chakraborty, N Lourenco, J Palmer, Y Hu, M Ruan, ... Nano letters 13 (3), 942-947, 2013 | 209 | 2013 |
| An 8–16 GHz SiGe low noise amplifier with performance tuning capability for mitigation of radiation-induced performance loss DC Howard, PK Saha, S Shankar, RM Diestelhorst, TD England, ... IEEE transactions on nuclear science 59 (6), 2837-2846, 2012 | 46 | 2012 |
| Design of radiation-hardened RF low-noise amplifiers using inverse-mode SiGe HBTs I Song, S Jung, NE Lourenco, US Raghunathan, ZE Fleetwood, ... IEEE transactions on Nuclear Science 61 (6), 3218-3225, 2014 | 42 | 2014 |
| Operation of SiGe HBTs down to 70 mK H Ying, BR Wier, J Dark, NE Lourenco, L Ge, AP Omprakash, M Mourigal, ... IEEE Electron Device Letters 38 (1), 12-15, 2016 | 41 | 2016 |
| Using TCAD modeling to compare heavy-ion and laser-induced single event transients in SiGe HBTs ZE Fleetwood, NE Lourenco, A Ildefonso, JH Warner, MT Wachter, ... IEEE Transactions on Nuclear Science 64 (1), 398-405, 2016 | 35 | 2016 |
| Collector transport in SiGe HBTs operating at cryogenic temperatures H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ... IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018 | 31 | 2018 |
| Advanced SiGe BiCMOS technology for multi-Mrad electronic systems ZE Fleetwood, EW Kenyon, NE Lourenco, S Jain, EX Zhang, TD England, ... IEEE Transactions on Device and Materials Reliability 14 (3), 844-848, 2014 | 30 | 2014 |
| The impact of technology scaling on the single-event transient response of SiGe HBTs NE Lourenco, ZE Fleetwood, A Ildefonso, MT Wachter, NJH Roche, ... IEEE Transactions on Nuclear Science 64 (1), 406-414, 2016 | 29 | 2016 |
| Single-event response of the SiGe HBT operating in inverse-mode SD Phillips, KA Moen, NE Lourenco, JD Cressler IEEE transactions on Nuclear Science 59 (6), 2682-2690, 2012 | 29 | 2012 |
| Evaluation of enhanced low dose rate sensitivity in fourth-generation SiGe HBTs ZE Fleetwood, AS Cardoso, I Song, E Wilcox, NE Lourenco, SD Phillips, ... IEEE transactions on Nuclear Science 61 (6), 2915-2922, 2014 | 28 | 2014 |
| Total dose and transient response of SiGe HBTs from a new 4th-Generation, 90 nm SiGe BiCMOS technology NE Lourenco, RL Schmid, KA Moen, SD Phillips, TD England, ... 2012 IEEE Radiation Effects Data Workshop, 1-5, 2012 | 28 | 2012 |
| Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ... IEEE transactions on Nuclear Science 61 (6), 3210-3217, 2014 | 27 | 2014 |
| An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ... IEEE transactions on Nuclear Science 60 (6), 4175-4183, 2013 | 26 | 2013 |
| A 60-GHz SiGe radiometer calibration switch utilizing a coupled avalanche noise source CT Coen, M Frounchi, NE Lourenco, CDY Cheon, WL Williams, ... IEEE Microwave and Wireless Components Letters 30 (4), 417-420, 2020 | 25 | 2020 |
| Tunneling, current gain, and transconductance in silicon-germanium heterojunction bipolar transistors operating at millikelvin temperatures D Davidović, H Ying, J Dark, BR Wier, L Ge, NE Lourenco, AP Omprakash, ... Physical Review Applied 8 (2), 024015, 2017 | 25 | 2017 |
| An investigation of single-event effect modeling techniques for a SiGe RF low-noise amplifier NE Lourenco, S Zeinolabedinzadeh, A Ildefonso, ZE Fleetwood, CT Coen, ... IEEE transactions on Nuclear Science 63 (1), 273-280, 2016 | 23 | 2016 |
| An investigation of single-event transients in C-SiGe HBT on SOI current mirror circuits S Jung, NE Lourenco, I Song, MA Oakley, TD England, R Arora, ... IEEE transactions on Nuclear Science 61 (6), 3193-3200, 2014 | 22 | 2014 |
| An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits TD England, R Arora, ZE Fleetwood, NE Lourenco, KA Moen, AS Cardoso, ... IEEE Transactions on Nuclear Science 60 (6), 4405-4411, 2013 | 22 | 2013 |
| Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability R Arora, ZE Fleetwood, EX Zhang, NE Lourenco, JD Cressler, ... IEEE Transactions on Nuclear Science 61 (3), 1426-1432, 2014 | 21 | 2014 |
| On the Transient Response of a Complementary (npn pnp) SiGe HBT BiCMOS Technology NE Lourenco, ZE Fleetwood, S Jung, AS Cardoso, PS Chakraborty, ... IEEE Transactions on Nuclear Science 61 (6), 3146-3153, 2014 | 20 | 2014 |
Zachary Evan FleetwoodSpaceXVerified email at gatech.edu