| State of the art of high temperature power electronics C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ... Materials Science and Engineering: B 176 (4), 283-288, 2011 | 469 | 2011 |
| Extreme dielectric strength in boron doped homoepitaxial diamond PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, Y Koide, F Jomard, ... Applied Physics Letters 97 (22), 2010 | 167 | 2010 |
| Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices C Raynaud, D Tournier, H Morel, D Planson Diamond and related materials 19 (1), 1-6, 2010 | 146 | 2010 |
| Deep SiC etching with RIE M Lazar, H Vang, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ... Superlattices and microstructures 40 (4-6), 388-392, 2006 | 74 | 2006 |
| High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, F Jomard, D Planson, ... physica status solidi (a) 207 (9), 2088-2092, 2010 | 67 | 2010 |
| Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy NS Savkina, AA Lebedev, DV Davydov, AM Strel'Chuk, AS Tregubova, ... Materials Science and Engineering: B 77 (1), 50-54, 2000 | 67 | 2000 |
| Towards an airborne high temperature SiC inverter D Bergogne, H Morel, D Planson, D Tournier, P Bevilacqua, B Allard, ... 2008 IEEE Power Electronics Specialists Conference, 3178-3183, 2008 | 61 | 2008 |
| Angle etch control for silicon carbide power devices F Lanois, P Lassagne, D Planson, ML Locatelli Applied physics letters 69 (2), 236-238, 1996 | 60 | 1996 |
| High-voltage 4H-SiC thyristors with a graded etched junction termination extension G Paques, S Scharnholz, N Dheilly, D Planson, RW De Doncker IEEE Electron Device Letters 32 (10), 1421-1423, 2011 | 56 | 2011 |
| Ni–Al ohmic contact to p-type 4H-SiC H Vang, M Lazar, P Brosselard, C Raynaud, P Cremillieu, JL Leclercq, ... Superlattices and microstructures 40 (4-6), 626-631, 2006 | 55 | 2006 |
| The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC F Laariedh, M Lazar, P Cremillieu, J Penuelas, JL Leclercq, D Planson Semiconductor Science and Technology 28 (4), 045007, 2013 | 46 | 2013 |
| A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase T Abi-Tannous, M Soueidan, G Ferro, M Lazar, C Raynaud, B Toury, ... IEEE Transactions on Electron Devices 63 (6), 2462-2468, 2016 | 40 | 2016 |
| Experimental determination of impact ionization coefficients in 4H-SiC DM Nguyen, C Raynaud, N Dheilly, M Lazar, D Tournier, P Brosselard, ... Diamond and related materials 20 (3), 395-397, 2011 | 33 | 2011 |
| High temperature characterization of SiC-JFET and modelling R Mousa, D Planson, H Morel, C Raynaud 2007 European Conference on Power Electronics and Applications, 1-10, 2007 | 33 | 2007 |
| Modeling and high temperature characterization of SiC-JFET R Mousa, D Planson, H Morel, B Allard, C Raynaud 2008 IEEE Power Electronics Specialists Conference, 3111-3117, 2008 | 32 | 2008 |
| Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts T Zhang, C Raynaud, D Planson The European Physical Journal Applied Physics 85 (1), 10102, 2019 | 31 | 2019 |
| Optical triggering of SiC thyristors using UV LEDs N Dheilly, G Pâques, S Scharnholz, P Bevilacqua, C Raynaud, ... Electronics letters 47 (7), 459-460, 2011 | 30 | 2011 |
| Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC. R Nipoti, F Moscatelli, A Scorzoni, A Poggi, GC Cardinali, M Lazar, ... MRS Online Proceedings Library (OPL) 742, K6. 2, 2002 | 29 | 2002 |
| SiC power devices operation from cryogenic to high temperature: investigation of various 1.2 kV SiC power devices T Chailloux, C Calvez, N Thierry-Jebali, D Planson, D Tournier Materials Science Forum 778, 1122-1125, 2014 | 28 | 2014 |
| Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of -type layers M Lazar, C Raynaud, D Planson, JP Chante, ML Locatelli, L Ottaviani, ... Journal of applied physics 94 (5), 2992-2998, 2003 | 28 | 2003 |
Dominique TournierPower Electronics ExpertVerified email at usicpower.com
