| Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network W Shin, J Im, RH Koo, J Kim, KR Kwon, D Kwon, JJ Kim, JH Lee, D Kwon Advanced Science 10 (15), 2207661, 2023 | 29 | 2023 |
| Low-frequency noise in gas sensors: A review W Shin, S Hong, Y Jeong, G Jung, J Park, D Kim, K Choi, H Shin, RH Koo, ... Sensors and Actuators B: Chemical 383, 133551, 2023 | 24 | 2023 |
| Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization W Shin, J Yim, JH Bae, JK Lee, S Hong, J Kim, Y Jeong, D Kwon, RH Koo, ... Materials Horizons 9 (6), 1623-1630, 2022 | 23 | 2022 |
| Investigation of low-frequency noise characteristics of ferroelectric tunnel junction: From conduction mechanism and scaling perspectives W Shin, JH Bae, D Kwon, RH Koo, BG Park, D Kwon, JH Lee IEEE Electron Device Letters 43 (6), 958-961, 2022 | 22 | 2022 |
| Effect of carrier transport process on tunneling electroresistance in ferroelectric tunnel junction RH Koo, W Shin, KK Min, D Kwon, DH Kim, JJ Kim, D Kwon, JH Lee IEEE Electron Device Letters 44 (1), 164-167, 2022 | 18 | 2022 |
| 1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network W Shin, KK Min, JH Bae, J Kim, RH Koo, D Kwon, JJ Kim, D Kwon, JH Lee Advanced Intelligent Systems 5 (6), 2200377, 2023 | 17 | 2023 |
| Frobenius numbers of Pythagorean triples BK Gil, JW Han, TH Kim, RH Koo, BW Lee, J Lee, KS Nam, HW Park, ... International Journal of Number Theory 11 (02), 613-619, 2015 | 17 | 2015 |
| Optimizing post-metal annealing temperature considering different resistive switching mechanisms in ferroelectric tunnel junction RH Koo, W Shin, KK Min, D Kwon, JJ Kim, D Kwon, JH Lee IEEE Electron Device Letters 44 (6), 935-938, 2023 | 13 | 2023 |
| Unveiling Resistance Switching Mechanisms in Undoped HfOx Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy W Shin, RH Koo, KK Min, D Kwon, JJ Kim, D Kwon, JH Lee IEEE Electron Device Letters 44 (2), 345-348, 2022 | 13 | 2022 |
| Variability analysis of ferroelectric FETs in program operation using low-frequency noise spectroscopy W Shin, JH Bae, J Kim, RH Koo, JJ Kim, D Kwon, JH Lee Applied Physics Letters 121 (16), 2022 | 13 | 2022 |
| Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems D Kwon, EC Park, W Shin, RH Koo, J Hwang, JH Bae, D Kwon, JH Lee Advanced Intelligent Systems 5 (12), 2300125, 2023 | 11 | 2023 |
| Highly efficient self-curing method in MOSFET using parasitic bipolar junction transistor W Shin, RH Koo, S Hong, D Kwon, J Hwang, BG Park, JH Lee IEEE Electron Device Letters 43 (7), 1001-1004, 2022 | 11 | 2022 |
| Cointegration of the TFT-type AND flash synaptic array and CMOS circuits for a hardware-based neural network MK Park, WM Kang, RH Koo, JH Kim, J Hwang, JH Bae, JJ Kim, JH Lee IEEE Transactions on Electron Devices 70 (1), 93-98, 2022 | 10 | 2022 |
| Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching RH Koo, W Shin, S Ryu, K Lee, SH Park, J Im, JH Ko, JH Kim, D Kwon, ... IEEE Electron Device Letters, 2023 | 8 | 2023 |
| In‐memory‐computed low‐frequency noise spectroscopy for selective gas detection using a reducible metal oxide W Shin, J Kim, G Jung, S Ju, SH Park, Y Jeong, S Hong, RH Koo, Y Yang, ... Advanced Science 10 (7), 2205725, 2023 | 8 | 2023 |
| Stochasticity in ferroelectric memory devices with different bottom electrode crystallinity RH Koo, W Shin, G Jung, D Kwon, JJ Kim, D Kwon, JH Lee Chaos, Solitons & Fractals 183, 114861, 2024 | 7 | 2024 |
| Unveiled Influence of Sub‐gap Density of States on Low‐Frequency Noise in Si‐Doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice? W Shin, JY Lee, RH Koo, J Kim, JH Lee, SY Lee, ST Lee Advanced Electronic Materials 10 (2), 2300515, 2024 | 7 | 2024 |
| Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction W Shin, RH Koo, KK Min, B Kwak, D Kwon, D Kwon, JH Lee Applied Physics Letters 122 (15), 2023 | 7 | 2023 |
| Proposition of Adaptive Read Bias: A Solution to Overcome Power and Scaling Limitations in Ferroelectric‐Based Neuromorphic System RH Koo, W Shin, S Kim, J Im, SH Park, JH Ko, D Kwon, JJ Kim, D Kwon, ... Advanced Science 11 (5), 2303735, 2024 | 6 | 2024 |
| Unraveling threshold voltage instability in ferroelectric junctionless FETs using low-frequency noise measurement with base bias W Shin, RH Koo, S Kim, D Kwon, JJ Kim, D Kwon, JH Lee IEEE Electron Device Letters, 2023 | 6 | 2023 |
Wonjun ShinSungkyunkwan UniversityVerified email at skku.edu