| High-efficiency, high-power mid-infrared quantum cascade lasers D Botez, JD Kirch, C Boyle, KM Oresick, C Sigler, H Kim, BB Knipfer, ... Optical Materials Express 8 (5), 1378-1398, 2018 | 98 | 2018 |
| Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1− xBix explored by atom probe tomography and HAADF-STEM AW Wood, W Chen, H Kim, Y Guan, K Forghani, A Anand, TF Kuech, ... Nanotechnology 28 (21), 215704, 2017 | 20 | 2017 |
| Strained-layer quantum well materials grown by MOCVD for diode laser application LJ Mawst, H Kim, G Smith, W Sun, N Tansu Progress in Quantum Electronics 75, 100303, 2021 | 19 | 2021 |
| Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing H Kim, Y Guan, SE Babcock, TF Kuech, LJ Mawst Journal of Applied Physics 123 (11), 2018 | 19 | 2018 |
| Selective growth of strained (In) GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning H Kim, J Choi, Z Lingley, M Brodie, Y Sin, TF Kuech, P Gopalan, LJ Mawst Journal of Crystal Growth 465, 48-54, 2017 | 18 | 2017 |
| Laser diodes employing GaAs1− xBix/GaAs1− yPy quantum well active regions H Kim, Y Guan, K Forghani, TF Kuech, LJ Mawst Semiconductor Science and Technology 32 (7), 075007, 2017 | 14 | 2017 |
| Strain-compensated GaAs1− yPy/GaAs1− zBiz/GaAs1− yPy quantum wells for laser applications H Kim, K Forghani, Y Guan, G Luo, A Anand, D Morgan, TF Kuech, ... Semiconductor Science and Technology 30 (9), 094011, 2015 | 14 | 2015 |
| Proton implantation for electrical insulation of the InGaAs/InAlAs superlattice material used in 8–15 μm-emitting quantum cascade lasers JD Kirch, H Kim, C Boyle, CC Chang, LJ Mawst, D Lindberg, T Earles, ... Applied Physics Letters 110 (8), 2017 | 12 | 2017 |
| High internal differential efficiency mid-infrared quantum cascade lasers D Botez, JD Kirch, CC Chang, C Boyle, H Kim, KM Oresick, C Sigler, ... Novel In-Plane Semiconductor Lasers XVI 10123, 92-103, 2017 | 12 | 2017 |
| Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness W Sun, H Kim, LJ Mawst, N Tansu Journal of Crystal Growth 531, 125381, 2020 | 10 | 2020 |
| Single junction solar cell employing strain compensated GaAs0. 965Bi0. 035/GaAs0. 75P0. 25 multiple quantum wells grown by metal organic vapor phase epitaxy H Kim, K Kim, Y Guan, J Lee, TF Kuech, LJ Mawst Applied Physics Letters 112 (25), 2018 | 10 | 2018 |
| Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics H Kim, K Forghani, Y Guan, K Kim, AW Wood, J Lee, SE Babcock, ... Journal of Crystal Growth 452, 276-280, 2016 | 10 | 2016 |
| III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers A Rajeev, B Shi, Q Li, JD Kirch, M Cheng, A Tan, H Kim, K Oresick, ... physica status solidi (a) 216 (1), 1800493, 2019 | 9 | 2019 |
| Impact of InGaAs carrier collection quantum well on the performance of InAs QD active region lasers fabricated by diblock copolymer lithography and selective area epitaxy H Kim, W Wei, TF Kuech, P Gopalan, LJ Mawst Semiconductor Science and Technology 34 (2), 025012, 2019 | 8 | 2019 |
| Double-uniform Schottky diode nonlinear transmission line generating sub-picosecond transients M Dwyer, H Kim, L Mawst, D van der Weide 2018 IEEE Radio and Wireless Symposium (RWS), 287-289, 2018 | 8 | 2018 |
| Impact of Sb incorporation on MOVPE-grown “bulk” InGaAs (Sb) N films for solar cell application T Kim, A Wood, H Kim, Y Kim, J Lee, M Peterson, Y Sin, S Moss, TF Kuech, ... IEEE Journal of Photovoltaics 6 (6), 1673-1677, 2016 | 8 | 2016 |
| Electrically injected 1.64µm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE H Kim, B Shi, Z Lingley, Q Li, A Rajeev, M Brodie, KM Lau, TF Kuech, ... Optics Express 27 (23), 33205-33216, 2019 | 7 | 2019 |
| Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1− yBiy on offcut and mesa-patterned GaAs substrates Y Guan, K Forghani, H Kim, SE Babcock, LJ Mawst, TF Kuech Journal of Crystal Growth 464, 39-48, 2017 | 7 | 2017 |
| Catastrophic degradation in high-power buried heterostructure quantum cascade lasers Y Sin, Z Lingley, M Brodie, B Knipfer, C Sigler, C Boyle, JD Kirch, ... CLEO: Science and Innovations, SW3N. 3, 2019 | 5 | 2019 |
| Impact of thermal annealing on internal device parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 quantum well lasers H Kim, Y Guan, TF Kuech, LJ Mawst IET Optoelectronics 13 (1), 12-16, 2019 | 3 | 2019 |
