| An optimized FinFET channel with improved line-edge roughness and linewidth roughness using the hydrogen thermal treatment technology G Wang, Y Wang, J Wang, L Pan, L Yu, Y Zheng, Y Shi IEEE Transactions on Nanotechnology 16 (6), 1081-1087, 2017 | 17 | 2017 |
| Kinetic Monte Carlo study on the evolution of silicon surface roughness under hydrogen thermal treatment G Wang, Y Wang, J Wang, L Pan, L Yu, Y Zheng, Y Shi Applied Surface Science 414, 361-364, 2017 | 9 | 2017 |
| Investigation on LDMOS characteristics of layout dependence in FinFET technology G Wang, B Lee, G Ma, N Wang, M Tang, K Ding, J Ju 2019 China Semiconductor Technology International Conference (CSTIC), 1-3, 2019 | 5 | 2019 |
| PBTI stress-induced 1/f noise in n-channel FinFET DY Chen, JS Bi, K Xi, G Wang Chinese Physics B 29 (12), 128501, 2020 | 4 | 2020 |
| Low Frequency Noise Characteristics in 16 nm FinFET Technology G Wang 2021 China Semiconductor Technology International Conference (CSTIC), 1-3, 2021 | 1 | 2021 |
| On-Resistance Improvement Impacted by Trapping Effects in Fin-LDMOS Technology G Wang, B Lee, N Wang, K Ding, G Ma 2019 China Semiconductor Technology International Conference (CSTIC), 1-3, 2019 | 1 | 2019 |
| Structural evolution of Ge-rich Si1− xGex films deposited by jet-ICPCVD Y Wang, M Yang, G Wang, X Wei, J Wang, Y Li, Z Zou, Y Zheng, Y Shi AIP Advances 5 (11), 2015 | 1 | 2015 |
| Low Frequency Noise and Hot Carrier Degradation Characteristics on 55nm LP Platform G Wang, C Hu, F Ding 2024 Conference of Science and Technology for Integrated Circuits (CSTIC), 1-3, 2024 | | 2024 |
| Evolutionary process of nanoscale FinFET channel in hydrogen thermal treatment technology G Wang, Y Shi, T Chen, Y Wang, J Wang, L Pan, L Yu 2016 13th IEEE International Conference on Solid-State and Integrated …, 2016 | | 2016 |
| Self-diffuse nanostructures on silicon surfaces through rapid annealing at high temperatures G Wang, Y Zhao, Y Shi 2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012 | | 2012 |