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N. Rouag
N. Rouag
Maitre conference en physique, université Laarbi Tébessi, Tébessa, Algérie
Verified email at univ-tebessa.dz - Homepage
Title
Cited by
Cited by
Year
Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes
L Boussouar, Z Ouennoughi, N Rouag, A Sellai, R Weiss, H Ryssel
Microelectronic Engineering 88 (6), 969-975, 2011
482011
On the difference in the apparent barrier height of inhomogeneous Schottky diodes with a Gaussian distribution
N Rouag, L Boussouar, S Toumi, Z Ouennoughi, MA Djouadi
Semiconductor science and technology 22 (4), 369, 2007
192007
Current conduction mechanism of MIS devices using multidimensional minimization system program
N Rouag, Z Ouennoughi, M Rommel, K Murakami, L Frey
Microelectronics Reliability 55 (7), 1028-1034, 2015
102015
Mathematical and Electrochemical Investigation of Lamium flexuosum Extract as Effective Corrosion Inhibitor for CS in Acidic Solution Using Multidimensional …
H Mahfoud, N Rouag, S Boudiba, M Benahmed, K Morakchi, S Akkal
Arabian Journal for Science and Engineering 47 (5), 6605-6616, 2022
92022
Normalized differential conductance to study current conduction mechanisms in MOS structures
TH Nouibat, Z Messai, D Chikouch, Z Ouennoughi, N Rouag, M Rommel, ...
Microelectronics Reliability 91, 183-187, 2018
32018
A new normalized direct conductance method for observation of Poole-Frenkel current
B Aounallah, N Rouag, Z Ouennoughi, A Ortiz-Conde
Solid-State Electronics 194, 108387, 2022
12022
Etude electrique et structurale des materiaux a larges bandes interdites (SiC et AlN)
N Rouag
12018
Analytic solution of carrier concentration as an explicit function of gate voltage in AlGaN/GaN HEMTs using the Lambert W‐function
N Rouag, M Trad, B Aounallah, Z Ouennoughi, A Ortiz‐Conde
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2023
2023
Simulated Analysis of 2DEG Density and Capacitances in AlGaN/GaN HEMTs: A Physical Perspective
M Trad, N Rouag, Z Ouennoughi
PROCEEDING OF, 47, 0
Modélisation, Simulation et extraction des paramètres de la diode Schottky métal/Sic.
N ROUAG
Université de Sétif 1-Ferhat Abbas, 0
Extraction of organic and inorganic solar cell device parameters using vertical optimization and Lambert Wfunction
Z Ouennoughi, A FerhatHamida, N Rouag, S Toumi, L Boussouar
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Articles 1–11