| Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate S Nacer, A Aissat, K Ferdjani Optical and quantum electronics 40, 677-683, 2008 | 34 | 2008 |
| Optical sensing by silicon slot-based directional couplers S Nacer, A Aissat Optical and Quantum Electronics 44, 35-43, 2012 | 22 | 2012 |
| Efficiency optimization of the structure pin-InGaN/GaN and quantum well-InGaN for solar cells A Aissat, H Arbouz, S Nacer, F Benyettou, JP Vilcot International Journal of Hydrogen Energy 41 (45), 20867-20873, 2016 | 19 | 2016 |
| Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications A Aissat, B Alshehri, S Nacer, JP Vilcot Materials Science in Semiconductor Processing 31, 568-572, 2015 | 19 | 2015 |
| Simulation and optimization of current matching double-junction InGaN/Si solar cells S Nacer, A Aissat Applied Physics A 122, 1-10, 2016 | 17 | 2016 |
| Low sensitivity to temperature compressive-strained structure quantum well laser Ga1− xInxAs1− yNy/GaAs A Aissat, S Nacer, M Bensebti, JP Vilcot Microelectronics journal 40 (1), 10-14, 2009 | 15 | 2009 |
| Modeling of Ga1− xInxAs1− y− zNySbz/GaAs quantum well properties for near-infrared lasers A Aissat, S Nacer, F Ykhlef, JP Vilcot Materials science in semiconductor processing 16 (6), 1936-1942, 2013 | 12 | 2013 |
| Effect of on band alignment of compressively strained Ga1− xInxNy As1− y− zSbz/GaAs quantum well structures A Aissat, S Nacer, M Seghilani, JP Vilcot Physica E: Low-dimensional Systems and Nanostructures 43 (1), 40-44, 2010 | 12 | 2010 |
| Simulation of InGaN p–i–n double heterojunction solar cells with linearly graded layers S Nacer, A Aissat Optik 126 (23), 3594-3597, 2015 | 11 | 2015 |
| Simulation and optimization of current and lattice matching double-junction GaNAsP/Si solar cells S Nacer, A Aissat Superlattices and Microstructures 89, 242-251, 2016 | 10 | 2016 |
| Modeling and simulation of GaAsPN/GaP quantum dot structure for solar cell in intermediate band solar cell applications A Aissat, L Chenini, S Nacer, JP Vilcot International Journal of Energy Research 46 (8), 10133-10142, 2022 | 8 | 2022 |
| Simulation and optimization of current matching multi-junction InGaN solar cells S Nacer, A Aissat Optical and Quantum Electronics 47 (12), 3863-3870, 2015 | 8 | 2015 |
| High sensitivity photonic crystal waveguide sensors S Nacer, A Aissat Optical and Quantum Electronics 45, 423-431, 2013 | 8 | 2013 |
| Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates A Aissat, S Nacer, M Bensebti, JP Vilcot Microelectronics journal 39 (1), 63-66, 2008 | 8 | 2008 |
| Modeling and simulation of solar cells quantum well based on SiGe/Si A Aissat, F Benyettou, S Nacer, JP Vilcot international journal of hydrogen energy 42 (13), 8790-8794, 2017 | 6 | 2017 |
| Improvement in the efficiency of solar cells based on the ZnSnN2/Si structure A Aissat, L Chenini, A Laidouci, S Nacer, JP Vilcot Materials Science and Engineering: B 300, 117071, 2024 | 5 | 2024 |
| Modelling a buried double junction photodetector using COMSOL W Rellam, A Aissat, H Bougerira, S Nacer Optik 126 (23), 4046-4049, 2015 | 2 | 2015 |
| Influence of dispersion on spectral characteristics of GADC optical filters S Nacer, A Aissat, K Ferdjani, M Bensebti Optical and quantum electronics 38, 701-710, 2006 | 2 | 2006 |
| Effect of In0. 70Ga0. 30As quantum dot insertion in the middle cell of InyGa1-yP/InxGa1-xAs/Ge triple-junction for solar cells A Aissat, S Nacer, JP Vilcot Superlattices and Microstructures 149, 106760, 2021 | 1 | 2021 |
| Long wavelength determination of a strained quantum well structure based on GaxIn1−x−yAsySb1−y /GaSb for gas detection A Aissat, S Nacer, H Aliane, JP Vilcot 2011 Saudi International Electronics, Communications and Photonics …, 2011 | 1 | 2011 |
