| Semiconductor devices with varying threshold voltage and fabrication methods thereof B Kannan, U Kwon, S Krishnan, T Ando, V Narayanan US Patent 9,748,145, 2017 | 430 | 2017 |
| Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing HS Yang, R Malik, S Narasimha, Y Li, R Divakaruni, P Agnello, S Allen, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 238 | 2004 |
| High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ... 2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014 | 192 | 2014 |
| Bias-temperature instabilities of polysilicon gate HfO/sub 2/MOSFETs K Onishi, R Choi, CS Kang, HJ Cho, YH Kim, RE Nieh, J Han, ... IEEE Transactions on Electron Devices 50 (6), 1517-1524, 2003 | 168 | 2003 |
| Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility PD Kirsch, MA Quevedo-Lopez, HJ Li, Y Senzaki, JJ Peterson, SC Song, ... Journal of applied physics 99 (2), 2006 | 152 | 2006 |
| Replacement metal gate structures providing independent control on work function and gate leakage current U Kwon, R Divakaruni, SA Krishnan, R Ramachandran US Patent 8,450,169, 2013 | 136 | 2013 |
| Improvement of surface carrier mobility of HfO/sub 2/MOSFETs by high-temperature forming gas annealing K Onishi, CS Kang, R Choi, HJ Cho, S Gopalan, RE Nieh, SA Krishnan, ... IEEE Transactions on Electron Devices 50 (2), 384-390, 2003 | 131 | 2003 |
| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 International Electron Devices Meeting, 28.1. 1-28.1. 4, 2011 | 129 | 2011 |
| Fundamental aspects of HfO2-based high-k metal gate stack reliability and implications on tinv-scaling E Cartier, A Kerber, T Ando, MM Frank, K Choi, S Krishnan, B Linder, ... 2011 International Electron Devices Meeting, 18.4. 1-18.4. 4, 2011 | 124 | 2011 |
| Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- Stacks A Kerber, SA Krishnan, EA Cartier IEEE Electron Device Letters 30 (12), 1347-1349, 2009 | 101 | 2009 |
| Metal gate-HfO/sub 2/MOS structures on GaAs substrate with and without Si interlayer IJ Ok, H Kim, M Zhang, CY Kang, SJ Rhee, C Choi, SA Krishnan, T Lee, ... IEEE electron device letters 27 (3), 145-147, 2006 | 99 | 2006 |
| Evaluation of silicon surface nitridation effects on ultra-thin gate dielectrics R Nieh, R Choi, S Gopalan, K Onishi, CS Kang, HJ Cho, S Krishnan, ... Applied physics letters 81 (9), 1663-1665, 2002 | 89 | 2002 |
| Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing RE Nieh, CS Kang, HJ Cho, K Onishi, R Choi, S Krishnan, JH Han, ... IEEE Transactions on electron devices 50 (2), 333-340, 2003 | 85 | 2003 |
| Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics P Sivasubramani, TS Boscke, J Huang, CD Young, PD Kirsch, ... 2007 IEEE Symposium on VLSI Technology, 68-69, 2007 | 81 | 2007 |
| Structural and electrical properties of HfO2 with top nitrogen incorporated layer HJ Cho, CS Kang, K Onishi, S Gopalan, R Nieh, R Choi, S Krishnan, ... IEEE Electron Device Letters 23 (5), 249-251, 2002 | 81 | 2002 |
| Scaling deep trench based eDRAM on SOI to 32nm and Beyond G Wang, D Anand, N Butt, A Cestero, M Chudzik, J Ervin, S Fang, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 65 | 2009 |
| Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability MA Quevedo-Lopez, SA Krishnan, PD Kirsch, G Pant, BE Gnade, ... Applied Physics Letters 87 (26), 2005 | 63 | 2005 |
| Area dependence of TDDB characteristics for HfO2 gate dielectrics YH Kim, K Onishi, CS Kang, HJ Cho, R Nieh, S Gopalan, R Choi, J Han, ... IEEE Electron Device Letters 23 (10), 594-596, 2002 | 63 | 2002 |
| Thickness dependence of Weibull slopes of HfO2 gate dielectrics YH Kim, K Onishi, CS Kang, HJ Cho, R Choi, S Krishnan, MS Akbar, ... IEEE Electron Device Letters 24 (1), 40-42, 2003 | 59 | 2003 |
| Effects of high-temperature forming gas anneal on HfO/sub 2/MOSFET performance K Onishi, CS Kang, R Choi, HJ Cho, S Gopalan, R Nieh, S Krishnan, ... 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002 | 58 | 2002 |
