| Energy-efficient Mott activation neuron for full-hardware implementation of neural networks S Oh, Y Shi, J Del Valle, P Salev, Y Lu, Z Huang, Y Kalcheim, IK Schuller, ... Nature nanotechnology 16 (6), 680-687, 2021 | 134 | 2021 |
| Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays Y Shi, L Nguyen, S Oh, X Liu, F Koushan, JR Jameson, D Kuzum Nature communications 9 (1), 5312, 2018 | 120 | 2018 |
| A soft-pruning method applied during training of spiking neural networks for in-memory computing applications Y Shi, L Nguyen, S Oh, X Liu, D Kuzum Frontiers in neuroscience 13, 405, 2019 | 53 | 2019 |
| The impact of resistance drift of phase change memory (PCM) synaptic devices on artificial neural network performance S Oh, Z Huang, Y Shi, D Kuzum IEEE Electron Device Letters 40 (8), 1325-1328, 2019 | 49 | 2019 |
| Drift-enhanced unsupervised learning of handwritten digits in spiking neural network with PCM synapses S Oh, Y Shi, X Liu, J Song, D Kuzum IEEE Electron Device Letters 39 (11), 1768-1771, 2018 | 41 | 2018 |
| Performance prospects of deeply scaled spin-transfer torque magnetic random-access memory for in-memory computing Y Shi, S Oh, Z Huang, X Lu, SH Kang, D Kuzum IEEE Electron Device Letters 41 (7), 1126-1129, 2020 | 37 | 2020 |
| 3-D quasi-atomistic model for line edge roughness in nonplanar MOSFETs S Oh, C Shin IEEE Transactions on Electron Devices 63 (12), 4617-4623, 2016 | 24 | 2016 |
| Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge J Park, A Kumar, Y Zhou, S Oh, JH Kim, Y Shi, S Jain, G Hota, E Qiu, ... Nature Communications 15 (1), 3492, 2024 | 18 | 2024 |
| Design for variation-immunity in sub-10-nm stacked-nanowire FETs to suppress LER-induced random variations J Park, H Lee, S Oh, C Shin IEEE Transactions on Electron Devices 63 (12), 5048-5054, 2016 | 16 | 2016 |
| Adaptive quantization as a device-algorithm co-design approach to improve the performance of in-memory unsupervised learning with SNNs Y Shi, Z Huang, S Oh, N Kaslan, J Song, D Kuzum IEEE Transactions on Electron Devices 66 (4), 1722-1728, 2019 | 13 | 2019 |
| A neuromorphic brain interface based on RRAM crossbar arrays for high throughput real-time spike sorting Y Shi, A Ananthakrishnan, S Oh, X Liu, G Hota, G Cauwenberghs, ... IEEE transactions on electron devices 69 (4), 2137-2144, 2021 | 10 | 2021 |
| High Throughput Neuromorphic Brain Interface with CuOx Resistive Crossbars for Real-time Spike Sorting Y Shi, A Ananthakrishnan, S Oh, X Liu, G Hota, G Cauwenberghs, ... 2021 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2021 | 9 | 2021 |
| Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing KS Woo, H Park, N Ghenzi, AA Talin, T Jeong, JH Choi, S Oh, YH Jang, ... ACS Nano, 2024 | 8 | 2024 |
| Capacitance matching effects in negative capacitnace field effect transistor J Jo, AI Khan, K Cho, S Oh, S Salahuddin, C Shin 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 174-175, 2016 | 7 | 2016 |
| Worst case sampling method with confidence ellipse for estimating the impact of random variation on static random access memory (SRAM) S Oh, J Jo, H Lee, GS Lee, JD Park, C Shin JSTS: Journal of Semiconductor Technology and Science 15 (3), 374-380, 2015 | 5 | 2015 |
| Integration of Ag-CBRAM crossbars and Mott ReLU neurons for efficient implementation of deep neural networks in hardware Y Shi, S Oh, J Park, J del Valle, P Salev, IK Schuller, D Kuzum Neuromorphic Computing and Engineering 3 (3), 034007, 2023 | 3 | 2023 |
| A Versatile and Efficient Neuromorphic Platform for Compute-in-Memory with Selector-less Memristive Crossbars S Jain, G Hota, Y Shi, S Oh, J Wu, P Fowler, D Kuzum, G Cauwenberghs 2023 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2023 | 3 | 2023 |
| Tuning the Spin Transition and Carrier Type in Rare‐Earth Cobaltates via Compositional Complexity A Zhang, S Oh, BK Choi, E Rotenberg, TD Brown, CD Spataru, ... Advanced Materials 36 (47), 2406885, 2024 | 1 | 2024 |
| Bayesian Neural Network Implemented by Dynamically Programmable Noise in Vanadium Oxide S Oh, TP Xiao, C Bennett, AJ Weiss, SR Bishop, PS Finnegen, EJ Fuller, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 1 | 2023 |
| Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge J Park, A Kumar, Y Zhou, S Oh, JH Kim, Y Shi, S Jain, G Hota, AL Nagle, ... arXiv preprint arXiv:2310.13844, 2023 | 1 | 2023 |