A F M Anhar Uddin Bhuiyan

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Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSUVerified email at osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityVerified email at osu.edu
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
Steven RingelThe Ohio State UniversityVerified email at osu.edu
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Verified email at buffalo.edu
Baishakhi MazumderUniversity at BuffaloVerified email at buffalo.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityVerified email at asu.edu
Sudipto SahaPhD in Electrical EngineeringVerified email at buffalo.edu
Xiuling LiUniversity of Texas at AustinVerified email at utexas.edu
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraVerified email at mrl.ucsb.edu
Alex Q. HuangUniversity of Texas at AustinVerified email at utexas.edu
Joel B VarleyLawrence Livermore National LaboratoryVerified email at llnl.gov
Andrew J. GreenAir Force Research LabVerified email at us.af.mil
Kelson ChabakAir Force Research LaboratoryVerified email at us.af.mil
Shin MouAir Force Research LaboratoryVerified email at us.af.mil
Saleh Ahmed KhanGraduate Student, University of Massachusetts LowellVerified email at student.uml.edu
Wenjuan ZhuAssociate Professor, University of Illinois at Urbana-ChampaignVerified email at illinois.edu
Zetian MiUniversity of Michigan, Ann ArborVerified email at umich.edu
Ahmed IbreljicResearch Assistant, University of Massachusetts LowellVerified email at uml.edu
Kathleen KashProfessor of Physics, Case Western Reserve UniversityVerified email at case.edu

A F M Anhar Uddin Bhuiyan

Assistant Professor, Electrical and Computer Engineering, University of Massachusetts Lowell

Verified email at uml.edu - Homepage

Semiconductor Materials and Devices


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MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019	338	2019
MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019	169	2019
Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020	135	2020
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga₂O₃ Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020	123	2020
MOCVD Epitaxy of Ultrawide Bandgap β-(Al_xGa_1–x)₂O₃ with High-Al Composition on (100) β-Ga₂O₃ Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020	100	2020
High-Mobility MOCVD β-Ga₂O₃ Epitaxy with Fast Growth Rate Using Trimethylgallium L Meng, Z Feng, AFMAU Bhuiyan, H Zhao Crystal Growth & Design 22 (6), 3896-3904, 2022	79	2022
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ... APL Materials 8 (2), 2020	79	2020
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020	63	2020
Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020	61	2020
Mg acceptor doping in MOCVD (010) β-Ga₂O₃ Z Feng, AFMAU Bhuiyan, NK Kalarickal, S Rajan, H Zhao Applied Physics Letters 117 (22), 222106, 2020	60	2020
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021	55	2021
MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020	55	2020
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao APL Materials 9 (10), 2021	52	2021
Vacuum Annealed β-Ga₂O₃ Recess Channel MOSFETs With 8.56 kV Breakdown Voltage S Sharma, L Meng, AFMAU Bhuiyan, Z Feng, D Eason, H Zhao, ... IEEE Electron Device Letters 43 (12), 2029-2032, 2022	45	2022
β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ... Applied Physics Letters 121 (5), 2022	44	2022
Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX CN Saha, A Vaidya, AFM Bhuiyan, L Meng, S Sharma, H Zhao, ... Applied Physics Letters 122 (18), 2023	40	2023
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ... Applied Physics Letters 117 (17), 2020	40	2020
Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ... Applied Physics Letters 119 (12), 2021	32	2021
MOCVD growth of (010) β-(Al_xGa_1−x)₂O₃ thin films AFMAU Bhuiyan, Z Feng, L Meng, H Zhao Journal of Materials Research 36 (23), 4804-4815, 2021	28	2021
A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1− x) 2O3 J Sarker, S Broderick, AFM Bhuiyan, Z Feng, H Zhao, B Mazumder Applied Physics Letters 116 (15), 2020	28	2020

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