| A novel negative capacitance tunnel FET with improved subthreshold swing and nearly non-hysteresis through hybrid modulation Y Zhao, Z Liang, Q Huang, C Chen, M Yang, Z Sun, K Zhu, H Wang, S Liu, ... IEEE electron device letters 40 (6), 989-992, 2019 | 34 | 2019 |
| On the trap locations in bulk FinFETs after hot carrier degradation (HCD) Z Yu, Z Zhang, Z Sun, R Wang, R Huang IEEE Transactions on Electron Devices 67 (7), 3005-3009, 2020 | 30 | 2020 |
| Understanding hot carrier reliability in FinFET technology from trap-based approach R Wang, Z Sun, YY Liu, Z Yu, Z Wang, X Jiang, R Huang 2021 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2021 | 28 | 2021 |
| Hot carrier degradation-induced dynamic variability in FinFETs: Experiments and modeling Z Yu, Z Sun, R Wang, J Zhang, R Huang IEEE Transactions on Electron Devices 67 (4), 1517-1522, 2020 | 27 | 2020 |
| Investigation on the lateral trap distributions in nanoscale MOSFETs during hot carrier stress Z Sun, Z Yu, Z Zhang, J Zhang, R Wang, P Lu, R Huang IEEE Electron Device Letters 40 (4), 490-493, 2019 | 25 | 2019 |
| A calibration-free 15-level/cell eDRAM computing-in-memory macro with 3T1C current-programmed dynamic-cascoded MLC achieving 233-to-304-TOPS/W 4b MAC J Song, X Tang, H Luo, H Zhang, X Qiao, Z Sun, X Yang, Y Wang, ... 2023 IEEE Custom Integrated Circuits Conference (CICC), 1-2, 2023 | 13 | 2023 |
| Double-sided row hammer effect in sub-20 nm DRAM: Physical mechanism, key features and mitigation L Zhou, J Li, Z Qiao, P Ren, Z Sun, J Wang, B Wu, Z Ji, R Wang, K Cao, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2023 | 11 | 2023 |
| Investigation of the off-state degradation in advanced FinFET technology—Part I: Experiments and analysis Z Sun, Z Wang, R Wang, L Zhang, J Zhang, Z Zhang, J Song, D Wang, ... IEEE Transactions on Electron Devices 70 (3), 914-920, 2023 | 11 | 2023 |
| Deep understanding of reliability in Hf-based FeFET during bipolar pulse cycling: trap profiling for read-after-write delay and memory window degradation P Cai, T Zhu, J Duan, Z Sun, H Li, Y Xue, Z Liu, H Xu, L Zhang, X Wang, ... 2022 International Electron Devices Meeting (IEDM), 32.2. 1-32.2. 4, 2022 | 11 | 2022 |
| On the understanding of pMOS NBTI degradation in advance nodes: Characterization, modeling, and exploration on the physical origin of defects Y Xue, P Ren, J Wu, Z Liu, S Wang, Y Li, Z Wang, Z Sun, D Wang, Y Wen, ... IEEE Transactions on Electron Devices, 2023 | 9 | 2023 |
| Body bias dependence of bias temperature instability (BTI) in bulk FinFET technology J Zhang, Z Wang, R Wang, Z Sun, R Huang Energy & Environmental Materials 5 (4), 1200-1203, 2022 | 9 | 2022 |
| Comprehensive study on the “Anomalous” complex RTN in advanced multi-fin bulk FinFET technology J Zhang, Z Zhang, R Wang, Z Sun, Z Zhang, S Guo, R Huang 2018 IEEE International Electron Devices Meeting (IEDM), 17.3. 1-17.3. 4, 2018 | 9 | 2018 |
| Transient self-heating effects on mixed-mode hot carrier and bias temperature instability in FinFETs: Experiments and modeling Z Sun, W Luo, Y Jiao, Z Zhang, J Song, L Zhang, Z Wang, J Zhang, ... IEEE Transactions on Electron Devices, 2023 | 8 | 2023 |
| Catching the missing EM consequence in soft breakdown reliability in advanced FinFETs: Impacts of self-heating, on-state TDDB, and layout dependence Z Dong, Z Sun, X Yang, X Li, Y Xue, C Luo, P Cai, Z Wang, S Wang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 7 | 2023 |
| New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance,(100) vs (110), and nMOS vs pMOS Z Wang, H Lu, Z Sun, C Shen, B Peng, WF Li, Y Xue, D Wang, Z Ji, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 6 | 2023 |
| Understanding Hot Carrier Degradation and Variation in FinFET Technology R Wang, Z Yu, J Zhang, Z Sun, Z Zhang, R Huang 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | 6 | 2020 |
| A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM J Song, X Tang, H Luo, H Zhang, X Qiao, Z Sun, X Yang, Z Wu, Y Wang, ... IEEE Journal of Solid-State Circuits, 2023 | 5 | 2023 |
| Investigation of the off-state degradation in advanced FinFET technology—Part II: Compact aging model and impact on circuits Z Sun, Z Wang, R Wang, L Zhang, J Zhang, Z Zhang, J Song, D Wang, ... IEEE Transactions on Electron Devices 70 (3), 921-927, 2023 | 5 | 2023 |
| Investigation of DIBL degradation in nanoscale FinFETs under various hot carrier stresses Z Sun, Z Yu, R Wang, J Zhang, Z Zhang, P Lu, R Huang 2018 14th IEEE International Conference on Solid-State and Integrated …, 2018 | 5 | 2018 |
| The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms Z Sun, S Chen, L Zhang, R Huang, R Wang Micromachines 15 (1), 127, 2024 | 4 | 2024 |
Zirui WangPeking UniversityVerified email at stu.pku.edu.cn