Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient Z Zheng, Y Zhang, V Lopez-Dominguez, L Sánchez-Tejerina, J Shi, ... Nature communications 12 (1), 4555, 2021 | 169 | 2021 |
Ferrimagnets for spintronic devices: From materials to applications Y Zhang, X Feng, Z Zheng, Z Zhang, K Lin, X Sun, G Wang, J Wang, J Wei, ... Applied Physics Reviews 10 (1), 2023 | 67 | 2023 |
Enhanced Spin-Orbit Torque and Multilevel Current-Induced Switching in Heterostructure Z Zheng, Y Zhang, X Feng, K Zhang, J Nan, Z Zhang, G Wang, J Wang, ... Physical Review Applied 12 (4), 044032, 2019 | 56 | 2019 |
Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3 Z Zheng, Y Zhang, D Zhu, K Zhang, X Feng, Y He, L Chen, Z Zhang, D Liu, ... Chinese Physics B 29 (7), 078505, 2020 | 30 | 2020 |
Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin–orbit torque in ferromagnetic multilayers K Zhang, L Chen, Y Zhang, B Hong, Y He, K Lin, Z Zhang, Z Zheng, ... Applied Physics Reviews 9 (1), 2022 | 26 | 2022 |
High on/off ratio spintronic multi‐level memory unit for deep neural network K Zhang, X Jia, K Cao, J Wang, Y Zhang, K Lin, L Chen, X Feng, Z Zheng, ... Advanced Science 9 (13), 2103357, 2022 | 15 | 2022 |
3D ferrimagnetic device for multi-bit storage and efficient in-memory computing Z Zhang, Z Zheng, Y Zhang, J Sun, K Lin, K Zhang, X Feng, L Chen, ... IEEE Electron Device Letters 42 (2), 152-155, 2020 | 14 | 2020 |
Anomalous Thermal-Assisted Spin–Orbit Torque-Induced Magnetization Switching for Energy-Efficient Logic-in-Memory Z Zheng, Z Zhang, X Feng, K Zhang, Y Zhang, Y He, L Chen, K Lin, ... ACS nano 16 (5), 8264-8272, 2022 | 10 | 2022 |
Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching L Chen, K Zhang, B Li, B Hong, W Huang, Y He, X Feng, Z Zhang, K Lin, ... Advanced Functional Materials 34 (2), 2308823, 2024 | 5 | 2024 |
Magneto-ionic Control of Ferrimagnetic Order by Oxygen Gating X Feng, Z Zheng, Y Zhang, Z Zhang, Y Shao, Y He, X Sun, L Chen, ... Nano letters 23 (11), 4778-4784, 2023 | 4 | 2023 |
Ultra-Fast True Random Number Generator Based on Ill-Posedness Nucleation of Skyrmion Bags in Ferrimagnets Z Zhang, K Lin, K Zhang, X Feng, L Chen, Y Zhang, A Bournel, M Kläui, ... IEEE Electron Device Letters, 2024 | 1 | 2024 |
Spintronic devices towards advanced computing framework Y Zhang, Z Zhang, K Lin, Z Zheng, X Feng, W Zhao 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 208-209, 2023 | 1 | 2023 |
Inertial motion of a magnetic hopfion in the framework of internal local modes K Lin, Z Zhang, W Huang, X Feng, L Chen, J Wang, K Zhang, W Zhao, ... Physical Review B 110 (9), 094429, 2024 | | 2024 |
Three-Dimensional Logic in Memory Device for Ultra-Low Power Parallel Evolutionary Computing Z Zhang, K Lin, X Feng, J Wang, W Zhao, Y Zhang 2024 IEEE 24th International Conference on Nanotechnology (NANO), 604-609, 2024 | | 2024 |
Orthogonal-Bulk-Spin-Orbit-Torque Device for All-Electrical In-Memory Computing L Chen, W Huang, K Zhang, B Li, Z Zhang, X Feng, K Lin, Y He, W Zhao, ... IEEE Electron Device Letters, 2024 | | 2024 |
High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network (Adv. Sci. 13/2022) K Zhang, X Jia, K Cao, J Wang, Y Zhang, K Lin, L Chen, X Feng, Z Zheng, ... Advanced Science 9 (13), 2270086, 2022 | | 2022 |