Sungjun Kim

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Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityVerified email at snu.ac.kr
Muhammad IsmailDivision Electronics and Electronics Engineering, Dongguk University, Seoul- KoreaVerified email at dongguk.edu
Chandreswar MahataResearch Professor, Division of Electronics and Electrical Engineering, Dongguk University,RepublicVerified email at dongguk.edu
Min-Hwi KimChung-Ang UniversityVerified email at cau.ac.kr
Seongjae ChoDepartment of Electronic and Electrical Engineering, Ewha Womans UniversityVerified email at ewha.ac.kr
Tae-Hyeon KimSeoul National University of Science and Tehcnology, Assistant ProfessorVerified email at seoultech.ac.kr
Yao-Feng ChangIntelVerified email at utexas.edu
Myounggon KangUniversity of Seoul, School of Advanced Fusion StudiesVerified email at uos.ac.kr
Hyungjin KimAssociate Professor, Hanyang UniversityVerified email at hanyang.ac.kr
Yoon KimUniversity of Seoul, School of Electrical and Computer Engineering, Associate ProfessorVerified email at uos.ac.kr
Sungjoon KimDepartment of AI Semiconductor Engineering, Korea University, SejongVerified email at korea.ac.kr
Kyung-chang RyooSamsung Electronics, Samsung Semiconductor, Seoul National UniversityVerified email at samsung.com
Dahye KimDongguk University Seoul CampusVerified email at dgu.ac.kr
Jong-Ho LeeDepartment of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr
kyung kyu MinTechnical Leader at SK Hynix Inc., Ph. DVerified email at snu.ac.kr
min-woo kwon강릉원주대학교Verified email at gwnu.ac.kr
Dae Hwan KimVerified email at kookmin.ac.kr
Minsuk KooUniversity of SeoulVerified email at uos.ac.kr
Woo Young ChoiProfessor, Department of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr
Wonbo ShimSeoul National University of Science and TechnologyVerified email at seoultech.ac.kr

Sungjun Kim

Division of Electronics and Electrical Engineering, Dongguk University

Verified email at dongguk.edu

Memristor RRAM Ferroelectric


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Analog synaptic behavior of a silicon nitride memristor S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park ACS applied materials & interfaces 9 (46), 40420-40427, 2017	250	2017
Biomimetic-inspired micro-nano hierarchical structures for capacitive pressure sensor applications C Mahata, H Algadi, J Lee, S Kim, T Lee Measurement 151, 107095, 2020	137	2020
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ... Nanoscale 11 (1), 237-245, 2019	116	2019
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications S Kim, S Jung, MH Kim, S Cho, BG Park Applied Physics Letters 106 (21), 2015	113	2015
Scaling effect on silicon nitride memristor with highly doped Si substrate S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ... Small 14 (19), 1704062, 2018	103	2018
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing M Ismail, U Chand, C Mahata, J Nebhen, S Kim Journal of Materials Science & Technology 96, 94-102, 2022	95	2022
Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse M Ismail, C Mahata, S Kim Journal of Alloys and Compounds 892, 162141, 2022	86	2022
Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems M Ismail, H Abbas, C Choi, S Kim Applied Surface Science 529, 147107, 2020	79	2020
Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application JH Ryu, C Mahata, S Kim Journal of Alloys and Compounds 850, 156675, 2021	78	2021
Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic application MK Rahmani, M Ismail, C Mahata, S Kim Results in Physics 18, 103325, 2020	76	2020
Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures S Kim, BG Park Applied Physics Letters 108 (21), 2016	75	2016
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO₂/Al₂O₃/HfO₂ Based Memristor on ITO Electrode C Mahata, M Kang, S Kim Nanomaterials 10 (10), 2069, 2020	72	2020
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems C Mahata, C Lee, Y An, MH Kim, S Bang, CS Kim, JH Ryu, S Kim, H Kim, ... Journal of Alloys and Compounds 826, 154434, 2020	72	2020
Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO₂/TaO_x/TiN Artificial Synaptic Device H Ryu, S Kim Nanomaterials 10 (11), 2159, 2020	71	2020
Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer M Ismail, H Abbas, C Choi, S Kim Journal of Alloys and Compounds 835, 155256, 2020	66	2020
Artificial synaptic characteristics of TiO2/HfO2 memristor with self-rectifying switching for brain-inspired computing JH Ryu, S Kim Chaos, Solitons & Fractals 140, 110236, 2020	65	2020
Investigations of structural, electronic and optical properties of TM-GaO3 (TM= Sc, Ti, Ag) perovskite oxides for optoelectronic applications: a first principles study MI Hussain, RMA Khalil, F Hussain, M Imran, AM Rana, S Kim Materials Research Express 7 (1), 015906, 2020	65	2020
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices JH Ryu, F Hussain, C Mahata, M Ismail, Y Abbas, MH Kim, C Choi, ... Applied Surface Science 529, 147167, 2020	62	2020
Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering J Lee, JH Ryu, B Kim, F Hussain, C Mahata, E Sim, M Ismail, Y Abbas, ... ACS applied materials & interfaces 12 (30), 33908-33916, 2020	61	2020
Tunable Synaptic Characteristics of a Ti/TiO₂/Si Memory Device for Reservoir Computing J Yang, H Cho, H Ryu, M Ismail, C Mahata, S Kim ACS Applied Materials & Interfaces 13 (28), 33244-33252, 2021	59	2021

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