| Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures AN Baranov, N Bertru, Y Cuminal, G Boissier, C Alibert, A Joullie Applied physics letters 71 (6), 735-737, 1997 | 80 | 1997 |
| Physical properties of Cu2ZnSnS4 thin films deposited by spray pyrolysis technique Z Seboui, Y Cuminal, N Kamoun-Turki Journal of renewable and Sustainable Energy 5 (2), 2013 | 75 | 2013 |
| Tunable diode laser absorption spectroscopy of carbon monoxide around 2.35 μm JC Nicolas, AN Baranov, Y Cuminal, Y Rouillard, C Alibert Applied optics 37 (33), 7906-7911, 1998 | 59 | 1998 |
| Effect of substrate temperature on physical properties of Cu2FeSnS4 thin films for photocatalysis applications C Nefzi, M Souli, Y Cuminal, N Kamoun-Turki Materials Science and Engineering: B 254, 114509, 2020 | 58 | 2020 |
| Effect of sulfur concentration on structural, optical and electrical properties of Cu2FeSnS4 thin films for solar cells and photocatalysis applications C Nefzi, M Souli, Y Cuminal, N Kamoun-Turki Superlattices and Microstructures 124, 17-29, 2018 | 54 | 2018 |
| Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy AN Baranov, Y Cuminal, G Boissier, JC Nicolas, JL Lazzari, C Alibert, ... Semiconductor science and technology 11 (8), 1185, 1996 | 41 | 1996 |
| Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 µm at room temperature AN Baranov, Y Cuminal, G Boissier, C Alibert, A Joullié Electronics Letters 32 (24), 2279-2280, 1996 | 38 | 1996 |
| Amorphous-nanocrystalline transition in silicon thin films obtained by argon diluted silane PECVD R Amrani, F Pichot, L Chahed, Y Cuminal Crystal Structure Theory and Applications 1 (3), 57-61, 2012 | 29 | 2012 |
| Long-wavelength (Ga, In) Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy N Bertru, A Baranov, Y Cuminal, G Almuneau, F Genty, A Joullié, O Brandt, ... Semiconductor science and technology 13 (8), 936, 1998 | 29 | 1998 |
| Optical and structural proprieties of nc-Si: H prepared by argon diluted silane PECVD R Amrani, F Pichot, J Podlecki, A Foucaran, L Chahed, Y Cuminal Journal of non-crystalline solids 358 (17), 1978-1982, 2012 | 24 | 2012 |
| Improved efficiency of GaSb solar cells using an Al0. 50Ga0. 50As0. 04Sb0. 96 window layer S Parola, A Vauthelin, J Tournet, J Kret, J El Husseini, F Martinez, ... Solar Energy Materials and Solar Cells 200, 110042, 2019 | 21 | 2019 |
| GaSb-based solar cells for multi-junction integration on Si substrates J Tournet, S Parola, A Vauthelin, DM Cardenes, S Soresi, F Martinez, ... Solar Energy Materials and Solar Cells 191, 444-450, 2019 | 21 | 2019 |
| The post-growth effect on the properties of Cu2ZnSnS4 thin films Z Seboui, A Gassoumi, Y Cuminal, NK Turki Journal of Renewable and Sustainable Energy 7 (1), 2015 | 21 | 2015 |
| Electrical properties of short period InAs/GaSb superlattice P Christol, L Konczewicz, Y Cuminal, H Aït‐Kaci, JB Rodriguez, A Joullié physica status solidi c 4 (4), 1494-1498, 2007 | 21 | 2007 |
| Effect of annealing process on the properties of Cu2ZnSnS4 thin films Z Seboui, A Gassoumi, Y Cuminal, N Kamoun-Turki Superlattices and Microstructures 75, 586-592, 2014 | 20 | 2014 |
| Surface passivation of GaInAsSb photodiodes with thioacetamide A Salesse, A Joullié, P Calas, J Nieto, F Chevrier, Y Cuminal, ... physica status solidi c 4 (4), 1508-1512, 2007 | 20 | 2007 |
| Improvement of Sb-based multiquantum well lasers by Coulomb enhancement P Christol, P Bigenwald, A Joullié, Y Cuminal, AN Baranov, N Bertru, ... IEE Proceedings-Optoelectronics 146 (1), 3-8, 1999 | 19 | 1999 |
| Low temperature growth of hydrogenated silicon prepared by PECVD from argon diluted silane plasma R Amrani, P Abboud, L Chahed, Y Cuminal Crystal Structure Theory and Applications 1 (03), 62, 2012 | 18 | 2012 |
| Strained multiple-quantum-well lasers grown on GaSb emitting between 2 and 2.4 um AN Baranov, Y Cuminal, N Bertru, CL Alibert, AF Joullie Integrated Optics Devices: Potential for Commercialization 2997, 2-13, 1997 | 18 | 1997 |
| Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers A Joullié, G Glastre, R Blondeau, JC Nicolas, Y Cuminal, AN Baranov, ... IEEE Journal of selected topics in quantum electronics 5 (3), 711-714, 1999 | 16 | 1999 |
Philippe ChristolIES, Université Montpellier, FranceVerified email at ies.univ-montp2.fr
