| N-polar GaN: Epitaxy, properties, and device applications S Mohanty, K Khan, E Ahmadi Progress in Quantum Electronics 87, 100450, 2023 | 25 | 2023 |
| Si doping of β-Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy Z Wen, K Khan, X Zhai, E Ahmadi Applied Physics Letters 122 (8), 2023 | 21 | 2023 |
| β-(Al, Ga) 2O3 for High Power Applications—A Review on Material Growth and Device Fabrication A Jian, K Khan, E Ahmadi International Journal of High Speed Electronics and Systems 28 (01n02), 1940006, 2019 | 19 | 2019 |
| Infrared dielectric functions and Brillouin zone center phonons of compared to - M Stokey, R Korlacki, M Hilfiker, S Knight, S Richter, V Darakchieva, ... Physical Review Materials 6 (1), 014601, 2022 | 15 | 2022 |
| Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... Journal of Applied Physics 131 (1), 015701, 2022 | 13 | 2022 |
| Scope of geothermal potential of Bangladesh: A review K Khan, M Ahmed, MS Parvez, MM Hossain 2015 3rd International Conference on Green Energy and Technology (ICGET), 1-4, 2015 | 13 | 2015 |
| Thermal stability of HVPE-grown (0001) α-Ga2O3 on sapphire template under vacuum and atmospheric environments Z Wen, K Khan, K Sun, R Wellen, Y Oshima, E Ahmadi Journal of Vacuum Science & Technology A 41 (4), 2023 | 12 | 2023 |
| Threephase SMS prepaid digital energy meter A Barua, N Mohammad, MA Arafat, K Khan, AI Abbas, R Chaudhary International Conference on Electrical and Computer Engineering, 2012 | 11 | 2012 |
| Effect of UV Laser Irradiation on the properties of NiO films and ZnO/NiO Heterostructures S Itapu, K Khan, DG Georgiev MRS Advances 1 (04), 293 - 298, 2016 | 8 | 2016 |
| Schottky barrier gate N-polar GaN-on-Sapphire deep recess HEMT with record 10.5 dB linear gain and 50.2% PAE at 94 GHz E Akso, H Collins, K Khan, B Wang, W Li, C Clymore, E Kayede, W Liu, ... IEEE Microwave and Wireless Technology Letters, 2024 | 6 | 2024 |
| Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric S Mohanty, Z Jian, K Khan, E Ahmadi Journal of Electronic Materials 52 (4), 2596-2602, 2023 | 6 | 2023 |
| Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3 X Xia, JS Li, Z Wen, K Khan, MI Khan, E Ahmadi, Y Oshima, DC Hays, ... Journal of Vacuum Science & Technology A 41 (2), 2023 | 6 | 2023 |
| Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy K Khan, K Sun, C Wurm, K Datta, PB Deotare, E Ahmadi Physical Review Materials 5 (12), 124606, 2021 | 6 | 2021 |
| Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy K Khan, S Diez, K Sun, C Wurm, UK Mishra, E Ahmadi APL Materials 9 (12), 2021 | 6 | 2021 |
| Growth of high quality (In, Ga) N films on O-face ZnO substrates by plasma-assisted molecular beam epitaxy K Khan, M Biswas, E Ahmadi AIP Advances 10 (7), 2020 | 6 | 2020 |
| Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy GA Alvarez, J Casamento, L van Deurzen, MI Khan, K Khan, E Jeong, ... Materials Research Letters 11 (12), 1048-1054, 2023 | 5 | 2023 |
| N-Polar GaN Deep Recess HEMT With Atomic Layer Deposition HfO as Gate Insulator O Odabasi, S Mohanty, K Khan, E Ahmadi IEEE Transactions on Electron Devices, 2023 | 5 | 2023 |
| Rectifying behavior and light emission from nickel oxide MIS structures K Khan, S Itapu, DG Georgiev MRS Advances 1 (49), 3341-3347, 2016 | 5 | 2016 |
| Selective-Area Growth of GaN and AlGaN Nanowires on N-Polar GaN Templates with 4° Miscut by Plasma-Assisted Molecular Beam Epitaxy K Khan, ZA Jian, J Li, K Sun, E Ahmadi Journal of Crystal Growth 611 (127181), 1-7, 2023 | 4 | 2023 |
| Negative differential resistance (NDR) behavior of nickel oxide (NiO) based metal-insulator-semiconductor structures K Khan, S Itapu, DG Georgiev Journal of Electronic Materials 49 (1), 333-340, 2020 | 3 | 2020 |