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Xiqiao Wang, Ph.D.
Xiqiao Wang, Ph.D.
Rigetti Computing
Verified email at rigetti.com - Homepage
Title
Cited by
Cited by
Year
Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots
X Wang, E Khatami, F Fei, J Wyrick, P Namboodiri, R Kashid, AF Rigosi, ...
Nature Communications 13 (1), 6824, 2022
732022
Atom‐by‐atom fabrication of single and few dopant quantum devices
J Wyrick, X Wang, RV Kashid, P Namboodiri, SW Schmucker, ...
Advanced Functional Materials 29 (52), 1903475, 2019
642019
Atomic-scale control of tunneling in donor-based devices
X Wang, J Wyrick, RV Kashid, P Namboodiri, SW Schmucker, A Murphy, ...
Communications Physics 3 (1), 82, 2020
322020
Enhanced atomic precision fabrication by adsorption of phosphine into engineered dangling bonds on H–Si using STM and DFT
J Wyrick, X Wang, P Namboodiri, RV Kashid, F Fei, J Fox, R Silver
ACS nano 16 (11), 19114-19123, 2022
282022
High resolution thickness measurements of ultrathin Si: P monolayers using weak localization
JA Hagmann, X Wang, P Namboodiri, J Wyrick, R Murray, MD Stewart, ...
Applied Physics Letters 112 (4), 2018
282018
Quantifying atom-scale dopant movement and electrical activation in Si: P monolayers
X Wang, JA Hagmann, P Namboodiri, J Wyrick, K Li, RE Murray, A Myers, ...
Nanoscale 10 (9), 4488-4499, 2018
262018
Atom-by-atom construction of a cyclic artificial molecule in silicon
J Wyrick, X Wang, P Namboodiri, SW Schmucker, RV Kashid, RM Silver
Nano letters 18 (12), 7502-7508, 2018
222018
Calculating hyperfine couplings in large ionic crystals containing hundreds of QM atoms: subsystem DFT is the key
R Kevorkyants, X Wang, DM Close, M Pavanello
The Journal of Physical Chemistry B 117 (45), 13967-13974, 2013
172013
Low-Resistance, High-Yield Electrical Contacts to Atom Scale Devices Using Palladium Silicide
SW Schmucker, PN Namboodiri, R Kashid, X Wang, B Hu, JE Wyrick, ...
Physical review applied 11 (3), 034071, 2019
162019
STM patterned nanowire measurements using photolithographically defined implants in Si (100)
AN Ramanayaka, HS Kim, K Tang, X Wang, RM Silver, MD Stewart Jr, ...
Scientific reports 8 (1), 1790, 2018
162018
Silicon epitaxy on H-terminated Si (100) surfaces at 250 C
X Deng, P Namboodiri, K Li, X Wang, G Stan, AF Myers, X Cheng, T Li, ...
Applied surface science 378, 301-307, 2016
162016
Alternating-bias assisted annealing of amorphous oxide tunnel junctions
DP Pappas, M Field, CJ Kopas, JA Howard, X Wang, E Lachman, J Oh, ...
Communications Materials 5 (1), 150, 2024
82024
Spatially resolved scanning tunneling spectroscopy of single-layer steps on Si (100) surfaces
X Wang, P Namboodiri, K Li, X Deng, R Silver
Physical Review B 94 (12), 125306, 2016
82016
Electron-electron interactions in low-dimensional Si: P delta layers
JA Hagmann, X Wang, R Kashid, P Namboodiri, J Wyrick, SW Schmucker, ...
Physical Review B 101 (24), 245419, 2020
42020
Atomic precision fabrication of quantum devices down to the single atom regime
RM Silver, X Wang, F Fei, J Wyrick, R Kashid, P Namboodiri
Novel Patterning Technologies 2021 11610, 1161018, 2021
32021
Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing
X Wang, J Howard, EA Sete, G Stiehl, C Kopas, S Poletto, X Wu, M Field, ...
2024 IEEE International Conference on Quantum Computing and Engineering (QCE …, 2024
22024
Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy
P Namboodiri, J Wyrick, G Stan, X Wang, F Fei, RV Kashid, ...
Nanotechnology Reviews 13 (1), 20230196, 2024
12024
Atomic-scale control of tunnel coupling
X Wang, J Wyrick, RV Kashid, P Namboodiri, SW Schmucker, A Murphy, ...
arXiv preprint arXiv:1905.00132, 2019
12019
Atomically Precise Fabrication and Characterization of Donor-based Quantum Devices in Silicon
X Wang
University of Maryland, College Park, 2019
12019
Towards single atom devices: weak localization in embedded phosphorus delta layers in silicon
J Hagmann, X Wang, P Namboodiri, J Wyrick, R Murray, MD Stewart, ...
APS March Meeting Abstracts 2017, A28. 002, 2017
12017
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Articles 1–20