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Hui Zhao
Hui Zhao
Other namesHanna Zhao
University of Minnesota, Western Digital
Verified email at wdc.com
Title
Cited by
Cited by
Year
A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory
KC Chun, H Zhao, JD Harms, TH Kim, JP Wang, CH Kim
IEEE journal of solid-state circuits 48 (2), 598-610, 2012
4272012
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 2011
2292011
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ...
ACS nano 6 (7), 6115-6121, 2012
1562012
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 2011
1142011
Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy
H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ...
Journal of Physics D: Applied Physics 45 (2), 025001, 2011
932011
Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells
ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ...
Applied Physics Letters 98 (7), 2011
782011
Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM
PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ...
IEEE Electron Device Letters 32 (1), 57-59, 2010
642010
Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer
MT Rahman, A Lyle, P Khalili Amiri, J Harms, B Glass, H Zhao, ...
Journal of Applied Physics 111 (7), 2012
382012
Probing dipole coupled nanomagnets using magnetoresistance read
A Lyle, A Klemm, J Harms, Y Zhang, H Zhao, JP Wang
Applied Physics Letters 98 (9), 2011
332011
Spin-torque driven switching probability density function asymmetry
H Zhao, Y Zhang, PK Amiri, JA Katine, J Langer, H Jiang, IN Krivorotov, ...
IEEE Transactions on Magnetics 48 (11), 3818-3820, 2012
292012
High giant magnetoresistance and thermal annealing effects in perpendicular magnetic [Co/Ni] N-based spin valves
Z Li, Z Zhang, H Zhao, B Ma, QY Jin
Journal of Applied Physics 106 (1), 2009
282009
Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model
J Kim, H Zhao, Y Jiang, A Klemm, JP Wang, CH Kim
72nd Device Research Conference, 155-156, 2014
232014
Ultrafast optical modulation of exchange coupling in FePt∕ CoFe composite structure
Y Ren, H Zhao, Z Zhang, QY Jin
Applied Physics Letters 92 (16), 2008
182008
Spin-transfer torque switching above ambient temperature
H Zhao, PK Amiri, Y Zhang, A Lyle, JA Katine, J Langer, H Jiang, ...
IEEE Magnetics Letters 3, 3000304-3000304, 2012
162012
High power and low critical current spin torque oscillation from a magnetic tunnel junction with a built-in hard axis polarizer
Y Zhang, H Zhao, A Lyle, PA Crowell, JP Wang
Applied Physics Letters 100 (3), 2012
162012
Double-shifted magnetic hysteresis loops in perpendicular [Co/Ni] N/FeMn exchange biased systems
S Chen, H Zhao, G Wang, Z Zhang, B Ma, QY Jin
Thin Solid Films 534, 553-556, 2013
122013
Principle and manufacture of a new type of torque sensor based on the torsional effect of a piezoelectric quartz disc
C Gao, H Zhao, L Ma, N Chen
Measurement Science and Technology 17 (2), 323, 2006
112006
Pinning effect and thermal stability study in L1 FePt-pinned spin valves
H Zhao, Z Zhang, B Ma, QY Jin
Journal of Applied Physics 102 (2), 2007
82007
Study of Spin Valves With -FePt Pinning Layer and Different Pinned Layers
H Zhao, X Li, Z Zhang, B Ma, QY Jin
IEEE transactions on magnetics 43 (6), 2839-2841, 2007
62007
Interface roughness effects on the performance of magnetic tunnel junctions
Z Zhang, H Zhao, Y Ren, B Ma, QY Jin
Thin solid films 515 (7-8), 3941-3945, 2007
52007
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Articles 1–20