A scaling roadmap and performance evaluation of in-plane and perpendicular MTJ based STT-MRAMs for high-density cache memory KC Chun, H Zhao, JD Harms, TH Kim, JP Wang, CH Kim IEEE journal of solid-state circuits 48 (2), 598-610, 2012 | 427 | 2012 |
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ... Applied Physics Letters 98 (11), 2011 | 229 | 2011 |
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ... ACS nano 6 (7), 6115-6121, 2012 | 156 | 2012 |
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ... Applied Physics Letters 98 (10), 2011 | 114 | 2011 |
Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy H Zhao, B Glass, PK Amiri, A Lyle, Y Zhang, YJ Chen, G Rowlands, ... Journal of Physics D: Applied Physics 45 (2), 025001, 2011 | 93 | 2011 |
Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells ZM Zeng, P Khalili Amiri, G Rowlands, H Zhao, IN Krivorotov, JP Wang, ... Applied Physics Letters 98 (7), 2011 | 78 | 2011 |
Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM PK Amiri, ZM Zeng, P Upadhyaya, G Rowlands, H Zhao, IN Krivorotov, ... IEEE Electron Device Letters 32 (1), 57-59, 2010 | 64 | 2010 |
Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer MT Rahman, A Lyle, P Khalili Amiri, J Harms, B Glass, H Zhao, ... Journal of Applied Physics 111 (7), 2012 | 38 | 2012 |
Probing dipole coupled nanomagnets using magnetoresistance read A Lyle, A Klemm, J Harms, Y Zhang, H Zhao, JP Wang Applied Physics Letters 98 (9), 2011 | 33 | 2011 |
Spin-torque driven switching probability density function asymmetry H Zhao, Y Zhang, PK Amiri, JA Katine, J Langer, H Jiang, IN Krivorotov, ... IEEE Transactions on Magnetics 48 (11), 3818-3820, 2012 | 29 | 2012 |
High giant magnetoresistance and thermal annealing effects in perpendicular magnetic [Co/Ni] N-based spin valves Z Li, Z Zhang, H Zhao, B Ma, QY Jin Journal of Applied Physics 106 (1), 2009 | 28 | 2009 |
Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model J Kim, H Zhao, Y Jiang, A Klemm, JP Wang, CH Kim 72nd Device Research Conference, 155-156, 2014 | 23 | 2014 |
Ultrafast optical modulation of exchange coupling in FePt∕ CoFe composite structure Y Ren, H Zhao, Z Zhang, QY Jin Applied Physics Letters 92 (16), 2008 | 18 | 2008 |
Spin-transfer torque switching above ambient temperature H Zhao, PK Amiri, Y Zhang, A Lyle, JA Katine, J Langer, H Jiang, ... IEEE Magnetics Letters 3, 3000304-3000304, 2012 | 16 | 2012 |
High power and low critical current spin torque oscillation from a magnetic tunnel junction with a built-in hard axis polarizer Y Zhang, H Zhao, A Lyle, PA Crowell, JP Wang Applied Physics Letters 100 (3), 2012 | 16 | 2012 |
Double-shifted magnetic hysteresis loops in perpendicular [Co/Ni] N/FeMn exchange biased systems S Chen, H Zhao, G Wang, Z Zhang, B Ma, QY Jin Thin Solid Films 534, 553-556, 2013 | 12 | 2013 |
Principle and manufacture of a new type of torque sensor based on the torsional effect of a piezoelectric quartz disc C Gao, H Zhao, L Ma, N Chen Measurement Science and Technology 17 (2), 323, 2006 | 11 | 2006 |
Pinning effect and thermal stability study in L1 FePt-pinned spin valves H Zhao, Z Zhang, B Ma, QY Jin Journal of Applied Physics 102 (2), 2007 | 8 | 2007 |
Study of Spin Valves With -FePt Pinning Layer and Different Pinned Layers H Zhao, X Li, Z Zhang, B Ma, QY Jin IEEE transactions on magnetics 43 (6), 2839-2841, 2007 | 6 | 2007 |
Interface roughness effects on the performance of magnetic tunnel junctions Z Zhang, H Zhao, Y Ren, B Ma, QY Jin Thin solid films 515 (7-8), 3941-3945, 2007 | 5 | 2007 |