| Nanometer-scale Ge-based adaptable transistors providing programmable negative differential resistance enabling multivalued logic M Sistani, R Böckle, D Falkensteiner, MA Luong, MI den Hertog, ... ACS nano 15 (11), 18135-18141, 2021 | 39 | 2021 |
| A top‐down platform enabling Ge based reconfigurable transistors R Böckle, M Sistani, B Lipovec, D Pohl, B Rellinghaus, A Lugstein, ... Advanced Materials Technologies 7 (1), 2100647, 2022 | 31 | 2022 |
| Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts A Fuchsberger, L Wind, M Sistani, R Behrle, D Nazzari, J Aberl, ... Advanced Electronic Materials 9 (6), 2201259, 2023 | 29 | 2023 |
| Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single‐Elementary Al Contacts L Wind, M Sistani, R Böckle, J Smoliner, L Vukŭsić, J Aberl, M Brehm, ... Small 18 (44), 2204178, 2022 | 29 | 2022 |
| Gate‐tunable negative differential resistance in next‐generation ge nanodevices and their performance metrics R Böckle, M Sistani, K Eysin, MG Bartmann, MA Luong, MI den Hertog, ... Advanced Electronic Materials 7 (3), 2001178, 2021 | 28 | 2021 |
| Monolithic and single-crystalline aluminum–silicon heterostructures L Wind, R Böckle, M Sistani, P Schweizer, X Maeder, J Michler, ... ACS Applied Materials & Interfaces 14 (22), 26238-26244, 2022 | 26 | 2022 |
| Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures R Böckle, M Sistani, M Bažíková, L Wind, Z Sadre‐Momtaz, MI den Hertog, ... Advanced Electronic Materials 9 (1), 2200567, 2023 | 19 | 2023 |
| Bias-switchable photoconductance in a nanoscale Ge photodetector operated in the negative differential resistance regime M Sistani, R Böckle, MG Bartmann, A Lugstein, WM Weber ACS Photonics 8 (12), 3469-3475, 2021 | 11 | 2021 |
| Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts M Sistani, R Böckle, L Wind, K Eysin, X Maeder, P Schweizer, J Michler, ... Advanced Electronic Materials 7 (5), 2100101, 2021 | 8 | 2021 |
| Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels L Wind, R Behrle, MI den Hertog, CGE Murphey, JF Cahoon, M Sistani, ... Advanced Electronic Materials 10 (2), 2300483, 2024 | 4 | 2024 |
| A flexible CubeSat education platform combining software development and hardware engineering D Schloms, D Freismuth, J Riepler, R Böckle 4th Symposium on Space Educational Activities, 2022 | 3 | 2022 |
| Mapping Electronic Transport in Ge Nanowire SBFETs: From Tunneling to NDR R Behrle, M Bažíková, S Barth, WM Weber, M Sistani 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 889-894, 2023 | 2 | 2023 |
| Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits R Behrle, MI Den Hertog, A Lugstein, WM Weber, M Sistani ESSDERC 2023-IEEE 53rd European Solid-State Device Research Conference …, 2023 | 2 | 2023 |
| Electrical and Structural Properties of Si1−xGex Nanowires Prepared from a Single-Source Precursor R Behrle, V Krause, MS Seifner, B Köstler, KA Dick, M Wagner, M Sistani, ... Nanomaterials 13 (4), 627, 2023 | 2 | 2023 |
| Ge-based reconfigurable transistors: a platform enabling negative differential resistance R Böckle Wien, 2021 | 2 | 2021 |
| Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors R Behrle, M Sistani, A Lugstein, Z Sadre Momtaz, MI Den Hertog, ... Applied Physics Letters 122 (24), 2023 | 1 | 2023 |
| Comparative Study of Charge Carrier Transport in Al-Si and Al-Ge Nanowire Heterostructure Transistors R Behrle, CGE Murphey, JF Cahoon, SC Barth, MI Den Hertog, ... # PLACEHOLDER_PARENT_METADATA_VALUE#, 2024 | | 2024 |
| Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy R Behrle, CGE Murphey, JF Cahoon, S Barth, MI den Hertog, WM Weber, ... ACS Applied Materials & Interfaces 16 (15), 19350-19358, 2024 | | 2024 |
| Bias-tunable temperature coefficient of resistance in Ge transistors R Behrle, J Smoliner, L Wind, D Nazzari, A Lugstein, WM Weber, ... Applied Physics Letters 124 (9), 2024 | | 2024 |
| Exploration of Charge Carrier Transport in Si and Ge based Schottky Barrier Field-Effect Transistors R Behrle Technische Universität Wien, 2024 | | 2024 |
