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Aitian Chen
Aitian Chen
University of Electronic Science and Technology of China
Verified email at kaust.edu.sa
Title
Cited by
Cited by
Year
Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature
P Li#, A Chen#, D Li#, Y Zhao*, S Zhang, L Yang, Y Liu, M Zhu, H Zhang, ...
Advanced materials 26 (25), 4320-4325, 2014
2152014
Light‐responsive ion‐redistribution‐induced resistive switching in hybrid perovskite Schottky junctions
X Guan, W Hu, MA Haque, N Wei, Z Liu, A Chen, T Wu*
Advanced Functional Materials 28 (3), 1704665, 2018
2142018
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
A Chen#, Y Wen#, B Fang, Y Zhao, Q Zhang, Y Chang, P Li, H Wu, ...
Nature communications 10, 243, 2019
1192019
Angular dependence of exchange bias and magnetization reversal controlled by electric‐field‐induced competing anisotropies
A Chen, Y Zhao*, P Li, X Zhang, R Peng, H Huang, L Zou, X Zheng, ...
Advanced Materials 28 (2), 363-369, 2016
1112016
Magnetic memory driven by topological insulators
H Wu#*, A Chen#, P Zhang#, H He, J Nance, C Guo, J Sasaki, ...
Nature Communications 12, 6251, 2021
1062021
Bipolar loop-like non-volatile strain in the (001)-oriented Pb (Mg 1/3 Nb 2/3) O 3-PbTiO 3 single crystals
L Yang, Y Zhao*, S Zhang, P Li, Y Gao, Y Yang, H Huang, P Miao, Y Liu, ...
Scientific reports 4, 4591, 2014
1022014
Electric-field modulation of interface magnetic anisotropy and spin reorientation transition in (Co/Pt) 3/PMN–PT heterostructure
Y Sun#, Y Ba#, A Chen#, W He, W Wang, X Zheng, L Zou, Y Zhang, ...
ACS applied materials & interfaces 9 (12), 10855-10864, 2017
682017
Research Update: Electrical manipulation of magnetism through strain-mediated magnetoelectric coupling in multiferroic heterostructures
AT Chen, YG Zhao*
APL Materials 4 (3), 032303, 2016
562016
Evolution of Ni nanofilaments and electromagnetic coupling in the resistive switching of NiO
Y Luo, D Zhao, Y Zhao*, F Chiang, P Chen, M Guo, N Luo, X Jiang, ...
Nanoscale 7 (2), 642-649, 2014
542014
Spatially resolved ferroelectric domain-switching-controlled magnetism in Co40Fe40B20/Pb (Mg1/3Nb2/3) 0.7 Ti0. 3O3 multiferroic heterostructure
P Li, Y Zhao*, S Zhang, A Chen, D Li, J Ma, Y Liu, DT Pierce, J Unguris, ...
ACS applied materials & interfaces 9 (3), 2642-2649, 2017
492017
Full voltage manipulation of the resistance of a magnetic tunnel junction
A Chen, Y Zhao, Y Wen, L Pan, P Li, XX Zhang*
Science advances 5 (12), eaay5141, 2019
482019
Ferroelectricity and self-polarization in ultrathin relaxor ferroelectric films
P Miao, Y Zhao*, N Luo, D Zhao, A Chen, Z Sun, M Guo, M Zhu, H Zhang, ...
Scientific reports 6, 19965, 2016
452016
Strain-mediated coexistence of volatile and nonvolatile converse magnetoelectric effects in Fe/Pb (Mg1/3Nb2/3) 0.7 Ti0. 3O3 heterostructure
S Zhang*, Q Chen, Y Liu, A Chen, L Yang, P Li, ZS Ming, Y Yu, W Sun, ...
ACS applied materials & interfaces 9 (24), 20637-20647, 2017
372017
Electric-field control of magnetism in Co40Fe40B20/(1-x) Pb (Mg1/3Nb2/3) O3-xPbTiO3 multiferroic heterostructures with different ferroelectric phases
Y Liu, Y Zhao*, P Li, S Zhang, D Li, H Wu, A Chen, Y Xu, XF Han, S Li, ...
ACS applied materials & interfaces 8 (6), 3784-3791, 2016
322016
Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure
J Wang, A Chen*, P Li*, S Zhang*
Materials 14 (16), 4623, 2021
282021
High-performance van der Waals antiferroelectric CuCrP2S6-based memristors
Y Ma#, Y Yan#, L Luo#, S Pazos, C Zhang, X Lv, M Chen, C Liu, Y Wang, ...
Nature Communications 14, 7891, 2023
242023
Magnetoresistance behavior of conducting filaments in resistive-switching NiO with different resistance states
D Zhao, S Qiao, Y Luo, A Chen, P Zhang, P Zheng, Z Sun, M Guo, ...
ACS applied materials & interfaces 9 (12), 10835-10846, 2017
232017
Low‐power and Field‐free Perpendicular Magnetic Memory Driven by Topological Insulators
B Cui#, A Chen#*, X Zhang#, B Fang#, Z Zeng, P Zhang, J Zhang, W He, ...
Advanced Materials 35 (31), 2302350, 2023
222023
Current-Induced Magnetization Switching Across a Nearly Room-Temperature Compensation Point in an Insulating Compensated Ferrimagnet
Y Li, D Zheng, C Liu, C Zhang, B Fang, A Chen, Y Ma, A Manchon, ...
ACS nano 16 (5), 8181-8189, 2022
222022
Unconventional spin pumping and magnetic damping in an insulating compensated ferrimagnet
Y Li, D Zheng, B Fang, C Liu, C Zhang, A Chen, Y Ma, K Shen*, H Liu, ...
Advanced Materials 34 (24), 2200019, 2022
212022
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