| X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ... Semiconductor physics quantum electronics & optoelectronics, 2013 | 29 | 2013 |
| Determination of fundamental optical constant of Zn2SnO4 films AO Salohub, AA Voznyi, OV Klymov, NV Safryuk, DI Kurbatov, ... Semiconductor physics, quantum electronics & optoelectronics, 79-84, 2017 | 22 | 2017 |
| High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ... Nanoscale research letters 10, 1-5, 2015 | 21 | 2015 |
| Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, AE Belyaev, ... Applied physics letters 95 (3), 2009 | 21 | 2009 |
| Modelling of X-ray diffraction curves for GaN nanowires on Si (1 1 1) VP Kladko, АV Kuchuk, HV Stanchu, NV Safriuk, AE Belyaev, ... Journal of crystal growth 401, 347-350, 2014 | 16 | 2014 |
| Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, PM Lytvyn, ... Journal of Physics D: Applied Physics 44 (2), 025403, 2010 | 16 | 2010 |
| The peculiarities of strain relaxation in GaN/AlN superlattices grown on vicinal GaN (0001) substrate: comparative XRD and AFM study AV Kuchuk, S Kryvyi, PM Lytvyn, S Li, VP Kladko, ME Ware, YI Mazur, ... Nanoscale Research Letters 11, 1-8, 2016 | 14 | 2016 |
| Chemical–mechanical polishing of single crystals of PbTe and Pb1–xSnxTe solid solutions in H2O2–HBr–ethylene glycol etchants GP Malanych, ZF Tomashyk, VM Tomashyk, IB Stratiychuk, NV Safryuk, ... Nauk. Visn. Chernivtsi Nats. Univ. Khim, 72-78, 2013 | 12 | 2013 |
| Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures V Kladko, A Kuchuk, А Naumov, N Safriuk, O Kolomys, S Kryvyi, ... Physica E: Low-dimensional Systems and Nanostructures 76, 140-145, 2016 | 11 | 2016 |
| Temperature dependences of the contact resistivity in ohmic contacts to n +-InN AV Sachenko, AE Belyaev, NS Boltovets, PN Brunkov, VN Jmerik, ... Semiconductors 49, 461-471, 2015 | 11 | 2015 |
| High-resolution x-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate Nano H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ... Res. Lett 10, 1-5, 2015 | 11 | 2015 |
| Structural and optical studies of strain relaxation in Ge1− xSnx layers grown on Ge/Si (001) by molecular beam epitaxy AS Nikolenko, VV Strelchuk, NV Safriuk, SB Kryvyi, VP Kladko, ... Thin Solid Films 613, 68-74, 2016 | 10 | 2016 |
| Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions FF Sizov, RK Savkina, AB Smirnov, RS Udovytska, VP Kladko, ... Physics of the solid state 56, 2160-2165, 2014 | 10 | 2014 |
| X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure VV Strelchuk, VP Kladko, EA Avramenko, OF Kolomys, NV Safryuk, ... Semiconductors 44, 1199-1210, 2010 | 7 | 2010 |
| Influence of dislocation structure on deformation processes in AlGaN/GaN/(0001) Al2O3 heterostructures VP Kladko, AV Kuchuk, NV Safryuk, AE Belyaev, VF Machulin Ukrainian Journal of Physics 54 (10), 1014-1020, 2009 | 7 | 2009 |
| Preparation and study of the porous Si surfaces obtained by electrochemical method VG Lytovchenko, TI Gorbanyuk, VP Kladko, AV Sarikov, NV Safriuk, ... Semiconductor physics, quantum electronics & optoelectronics, 385-395, 2017 | 5 | 2017 |
| Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient TM Sabov, OS Oberemok, OV Dubikovskyi, VP Melnik, VP Kladko, ... Semiconductor physics, quantum electronics & optoelectronics, 153-158, 2017 | 5 | 2017 |
| Synthesis, Luminescent and structural properties of the Cd1–xCuxS and Cd1–xZnxS nanocrystals DV Korbutyak, VP Kladko, NV Safryuk, OY Gudymenko, SI Budzulyak, ... Sumy State University, 2017 | 4 | 2017 |
| X-ray diffraction study of deformation state in InGaN/GaN multilayered structures VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, AE Belyaev, ... Semiconductor physics, quantum electronics & optoelectronics, 1-7, 2010 | 4 | 2010 |
| Current transport through ohmic contacts to indiume nitride with high defect density PO Sai, NV Safriuk, VV Shynkarenko 2017 IEEE 7th International Conference Nanomaterials: Application …, 2017 | 3 | 2017 |
