| Memristor networks for real-time neural activity analysis X Zhu, Q Wang, WD Lu Nature communications 11 (1), 2439, 2020 | 185 | 2020 |
| Very low-programming-current RRAM with self-rectifying characteristics J Zhou, F Cai, Q Wang, B Chen, S Gaba, WD Lu IEEE Electron Device Letters 37 (4), 404-407, 2016 | 121 | 2016 |
| A deep neural network accelerator based on tiled RRAM architecture Q Wang, X Wang, SH Lee, FH Meng, WD Lu 2019 IEEE international electron devices meeting (IEDM), 14.4. 1-14.4. 4, 2019 | 69 | 2019 |
| Hardware acceleration of simulated annealing of spin glass by RRAM crossbar array JH Shin, YJ Jeong, MA Zidan, Q Wang, WD Lu 2018 IEEE International Electron Devices Meeting (IEDM), 3.3. 1-3.3. 4, 2018 | 40 | 2018 |
| Self-Limited and Forming-Free CBRAM Device With Double Al2O3 ALD Layers JH Shin, Q Wang, WD Lu IEEE Electron Device Letters 39 (10), 1512-1515, 2018 | 28 | 2018 |
| Device Variation Effects on Neural Network Inference Accuracy in Analog In‐Memory Computing Systems Q Wang, Y Park, WD Lu Advanced Intelligent Systems 4 (8), 2100199, 2022 | 24 | 2022 |
| A high-speed MIM resistive memory cell with an inherent vanadium selector CY Lin, YT Tseng, PH Chen, TC Chang, JK Eshraghian, Q Wang, Q Lin, ... Applied Materials Today 21, 100848, 2020 | 20 | 2020 |
| Device non-ideality effects and architecture-aware training in RRAM in-memory computing modules Q Wang, Y Park, WD Lu 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2021 | 9 | 2021 |
| Deep neural network mapping and performance analysis on tiled rram architecture X Wang, Q Wang, FH Meng, SH Lee, WD Lu 2020 2nd IEEE International Conference on Artificial Intelligence Circuits …, 2020 | 6 | 2020 |
