Defect-induced phase transition in hafnium oxide thin films: comparing heavy ion irradiation and oxygen-engineering effects T Vogel, N Kaiser, S Petzold, E Piros, N Guillaume, G Lefévre, ... IEEE Transactions on Nuclear Science 68 (8), 1542-1547, 2021 | 17 | 2021 |
Structural and electrical response of emerging memories exposed to heavy ion radiation T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra, ... ACS nano 16 (9), 14463-14478, 2022 | 15 | 2022 |
Sub-10-nm ferroelectric Gd-doped HfO2 layers EV Skopin, N Guillaume, L Alrifai, P Gonon, A Bsiesy Applied Physics Letters 120 (17), 2022 | 10 | 2022 |
Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory G Lefevre, T Dewolf, N Guillaume, S Blonkowski, C Charpin-Nicolle, ... Journal of Applied Physics 130 (24), 2021 | 6 | 2021 |
Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase L Alrifai, EV Skopin, N Guillaume, P Gonon, A Bsiesy Applied Physics Letters 123 (3), 2023 | 3 | 2023 |
Filamentary type non-volatile memory device G Navarro, N Guillaume, S Blonkowski, P Gonon, E Jalaguier US Patent 11,711,927, 2023 | 2 | 2023 |
Structural properties of Ge-Sb-Te alloys H Cinkaya, A Ozturk, ASA Hasekioğlu, ZE Kaya, S Kalem, ... Solid-State Electronics 185, 108101, 2021 | 2 | 2021 |
Heavy Ion Irradiation Hardening Study on 4kb arrays HfO2-based OxRAM N Guillaume, G Lefèvre, C Charpin-Nicolle, L Grenouillet, T Vogel, ... 2020 20th European Conference on Radiation and Its Effects on Components and …, 2020 | 2 | 2020 |
Integration of labeled 4D-STEM SPED data for confirmation of phase identification T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra, ... | 1 | 2022 |
Improvement of HRS variability in OxRRAM by tailored metallic liner N Guillaume, M Azzaz, S Blonkowski, E Jalaguier, P Gonon, C Vallée, ... arXiv preprint arXiv:2010.12210, 2020 | 1 | 2020 |
Annealing effects on the structure of Ge-Sb-Te alloys H Cinkaya, ASA Hasekioğlu, ZE Kaya, S Kalem, C Charpin-Nicolle, ... 2020 Joint International EUROSOI Workshop and International Conference on …, 2020 | 1 | 2020 |
Guide des analyses en immunologie: indications, critères de réalisation et limites MA Alyanakian, A Chevailler, B Le Mauff, J Visentin, P Chrétien, ... Elsevier Health Sciences, 2020 | 1 | 2020 |
Method for manufacturing a microelectronic device comprising a plurality of resistive memory points configured to form a physical unclonable function and said device C Charpin-Nicolle, F Pebay-Peyroula, R Gassilloud, N Guillaume US Patent 12,120,889, 2024 | | 2024 |
Comparative study between undoped and doped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase and reducing the crystallization temperature L Alrifai, E Skopin, N Guillaume, P Gonon, A Bsiesy E-MRS, 2023 | | 2023 |
Comparison between Doped and Undoped Ferroelectric HfO2 L Alrifai, E Skopin, N Guillaume, P Gonon, A Bsiesy The AVS 23rd International Conference on Atomic Layer Deposition (ALD 2023), 2023 | | 2023 |
Method for manufacturing resistive memory cells N Guillaume, S Blonkowski, C Charpin-Nicolle, E Jalaguier US Patent App. 17/820,708, 2023 | | 2023 |
Sub 10-nm Ferroelectric HfO2 Capacitors Doped with Gd E Skopin, N Guillaume, L Alrifai, A Bsiesy Conference on Atomic Layer Deposition (ALD 2022) featuring the 9th …, 2022 | | 2022 |
Nano-analytical investigation of the forming process in an-based resistive switching memory G Lefevre, T Dewolf, N Guillaume | | 2021 |
Filamentary type non-volatile memory device G Navarro, N Guillaume, S Blonkowski, P Gonon, E Jalaguier | | 2021 |
Advanced TEM Techniques for Mechanisms and Reliability Analysis in State-of-the-Art OxRAM and PCM Non-Volatile Memory Devices G Lefèvre, N Guillaume, AL Serra, S David, C Vallée, N Bernier, ... Electrochemical Society Meeting Abstracts prime2020, 2035-2035, 2020 | | 2020 |