| Optically programmable electron spin memory using semiconductor quantum dots M Kroutvar, Y Ducommun, D Heiss, M Bichler, D Schuh, G Abstreiter, ... Nature 432 (7013), 81-84, 2004 | 1242 | 2004 |
| Coherent properties of a two-level system based on a quantum-dot photodiode A Zrenner, E Beham, S Stufler, F Findeis, M Bichler, G Abstreiter Nature 418 (6898), 612-614, 2002 | 1040 | 2002 |
| How many-particle interactions develop after ultrafast excitation of an electron–hole plasma R Huber, F Tauser, A Brodschelm, M Bichler, G Abstreiter, A Leitenstorfer Nature 414 (6861), 286-289, 2001 | 838 | 2001 |
| Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Superlattices G Abstreiter, H Brugger, T Wolf, H Jorke, HJ Herzog Physical review letters 54 (22), 2441, 1985 | 653 | 1985 |
| Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a GaAs/AlGaAs structure K Brunner, G Abstreiter, G Böhm, G Tränkle, G Weimann Physical review letters 73 (8), 1138, 1994 | 639 | 1994 |
| Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures D Spirkoska, J Arbiol, A Gustafsson, S Conesa-Boj, F Glas, I Zardo, ... Physical Review B—Condensed Matter and Materials Physics 80 (24), 245325, 2009 | 584 | 2009 |
| Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy C Colombo, D Spirkoska, M Frimmer, G Abstreiter, A Fontcuberta i Morral Physical Review B—Condensed Matter and Materials Physics 77 (15), 155326, 2008 | 528 | 2008 |
| Condensation of indirect excitons in coupled AlAs/GaAs quantum wells LV Butov, A Zrenner, G Abstreiter, G Böhm, G Weimann Physical review letters 73 (2), 304, 1994 | 506 | 1994 |
| Direct observation of controlled coupling in an individual quantum dot molecule HJ Krenner, M Sabathil, EC Clark, A Kress, D Schuh, M Bichler, ... Physical Review Letters 94 (5), 057402, 2005 | 481 | 2005 |
| Photoluminescence from a single GaAs/AlGaAs quantum dot K Brunner, U Bockelmann, G Abstreiter, M Walther, G Böhm, G Tränkle, ... Physical review letters 69 (22), 3216, 1992 | 448 | 1992 |
| Light scattering by free carrier excitations in semiconductors G Abstreiter, M Cardona, A Pinczuk Light Scattering in Solids IV: Electronics Scattering, Spin Effects, SERS …, 2005 | 426 | 2005 |
| Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures A Zrenner, LV Butov, M Hagn, G Abstreiter, G Böhm, G Weimann Physical review letters 72 (21), 3382, 1994 | 414 | 1994 |
| Coupled quantum dots fabricated by cleaved edge overgrowth: From artificial atoms to molecules G Schedelbeck, W Wegscheider, M Bichler, G Abstreiter Science 278 (5344), 1792-1795, 1997 | 394 | 1997 |
| Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires A Fontcuberta i Morral, C Colombo, G Abstreiter, J Arbiol, JR Morante Applied Physics Letters 92 (6), 2008 | 350 | 2008 |
| Intersubband relaxation in GaAs-Al x Ga 1− x As quantum well structures observed directly by an infrared bleaching technique A Seilmeier, HJ Hübner, G Abstreiter, G Weimann, W Schlapp Physical review letters 59 (12), 1345, 1987 | 337 | 1987 |
| Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules, and strain effects I Zardo, S Conesa-Boj, F Peiro, JR Morante, J Arbiol, E Uccelli, ... Physical Review B—Condensed Matter and Materials Physics 80 (24), 245324, 2009 | 296 | 2009 |
| Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy T Englert, G Abstreiter, J Pontcharra Solid-State Electronics 23 (1), 31-33, 1980 | 289 | 1980 |
| Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature B Mayer, D Rudolph, J Schnell, S Morkötter, J Winnerl, J Treu, K Müller, ... Nature communications 4 (1), 2931, 2013 | 280 | 2013 |
| Growth and characterization of self-assembled Ge-rich islands on Si G Abstreiter, P Schittenhelm, C Engel, E Silveira, A Zrenner, D Meertens, ... Semiconductor Science and Technology 11 (11S), 1521, 1996 | 279 | 1996 |
| Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs G Abstreiter, E Bauser, A Fischer, K Ploog Applied physics 16, 345-352, 1978 | 276 | 1978 |
Jonathan J. FinleyProfessor of Semiconductor Quantum NanoscienceVerified email at wsi.tum.de
