| Mesostructured g-C3N4 nanosheets interconnected with V2O5 nanobelts as electrode for coin-cell-type-asymmetric supercapacitor device KC Devarayapalli, K Lee, HB Do, NN Dang, K Yoo, J Shim, SVP Vattikuti Materials Today Energy 21, 100699, 2021 | 83 | 2021 |
| Over 30% efficiency bifacial 4-terminal perovskite-heterojunction silicon tandem solar cells with spectral albedo S Kim, TT Trinh, J Park, DP Pham, S Lee, HB Do, NN Dang, VA Dao, ... Scientific Reports 11 (1), 15524, 2021 | 68 | 2021 |
| Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer QH Luc, EY Chang, HD Trinh, YC Lin, HQ Nguyen, YY Wong, HB Do, ... IEEE Transactions on electron devices 61 (8), 2774-2778, 2014 | 47 | 2014 |
| Selective Semihydrogenation of Alkynes on Shape‐Controlled Palladium Nanocrystals J Chung, C Kim, H Jeong, T Yu, DH Binh, J Jang, J Lee, BM Kim, B Lim Chemistry–An Asian Journal 8 (5), 919-925, 2013 | 43 | 2013 |
| Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface … QH Luc, HB Do, MTH Ha, CC Hu, YC Lin, EY Chang IEEE Electron Device Letters 36 (12), 1277-1280, 2015 | 37 | 2015 |
| Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect … QH Luc, SP Cheng, PC Chang, HB Do, JH Chen, MTH Ha, SH Huynh, ... IEEE Electron Device Letters 37 (8), 974-977, 2016 | 28 | 2016 |
| Technological evolution of image sensing designed by nanostructured materials MA Iqbal, M Malik, TK Le, N Anwar, S Bakhsh, W Shahid, S Shahid, ... ACS Materials Letters 5 (4), 1027-1060, 2023 | 26 | 2023 |
| First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2Ferroelectric Gate Stack QH Luc, CC Fan-Chiang, SH Huynh, P Huang, HB Do, MTH Ha, YD Jin, ... 2018 IEEE Symposium on VLSI Technology, 47-48, 2018 | 22 | 2018 |
| In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment QH Luc, KS Yang, JW Lin, CC Chang, HB Do, SH Huynh, MTH Ha, ... IEEE Electron Device Letters 39 (3), 339-342, 2018 | 22 | 2018 |
| Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition SH Huynh, MTH Ha, HB Do, QH Luc, HW Yu, EY Chang Applied Physics Letters 109 (10), 2016 | 16 | 2016 |
| Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack HB Do, QH Luc, MTH Ha, CC Hu, YC Lin, EY Chang IEEE Transactions on Electron Devices 62 (12), 3987-3991, 2015 | 15 | 2015 |
| Intense green upconversion in core-shell structured NaYF4: Er, Yb@ SiO2 microparticles for anti-counterfeiting printing NB Tong, CTM Dung, TTK Hanh, TTN Lam, PB Thang, DH Binh, ... Ceramics International, 2023 | 14 | 2023 |
| Layer-by-layer thinning of two-dimensional materials PV Pham, HB Do, M Vasundhara, VH Nguyen, T Nguyen, H Van Bui, ... Chemical Society Reviews, 2024 | 13 | 2024 |
| Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study HB Do, AV Phan-Gia, VQ Nguyen, MM De Souza AIP Advances 12 (6), 2022 | 12 | 2022 |
| Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device Application HB Do, QH Luc, MTH Ha, SH Huynh, TA Nguyen, C Hu, YC Lin, ... IEEE Electron Device Letters 38 (5), 552-555, 2017 | 11 | 2017 |
| Methods for extracting flat band voltage in the InGaAs high mobility materials HB Do, QH Luc, MTH Ha, SH Huynh, C Hu, YC Lin, EY Chang IEEE Electron Device Letters 37 (9), 1100-1103, 2016 | 10 | 2016 |
| Understanding up and down-conversion luminescence for Er3+/Yb3+ co-doped SiO2-SnO2 glass-ceramics CTM Dung, LTT Giang, DH Binh, TTT Van Journal of Alloys and Compounds 870, 159405, 2021 | 9 | 2021 |
| Integrated Graphene Heterostructures in Optical Sensing PV Pham, TH Mai, HB Do, VK Ponnusamy, FC Chuang Micromachines 14 (5), 1060, 2023 | 8 | 2023 |
| Materials growth and band offset determination of Al2O3/In0. 15Ga0. 85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition SH Huynh, MTH Ha, HB Do, TA Nguyen, QH Luc, EY Chang Applied Physics Letters 110 (2), 2017 | 8 | 2017 |
| Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO2/InGaAs HB Do, QH Luc, PV Pham, AV Phan-Gia, TS Nguyen, HM Le, ... Micromachines 14 (8), 1606, 2023 | 7 | 2023 |
Luc, Quang-HoNational Chiao Tung University (NCTU)Verified email at nctu.edu.tw