| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 319 | 2009 |
| AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon (111) substrates with high electron mobility K Cheng, H Liang, M Van Hove, K Geens, B De Jaeger, P Srivastava, ... Applied Physics Express 5 (1), 011002, 2011 | 143 | 2011 |
| Strained germanium gate-all-around PMOS device demonstration using selective wire release etch prior to replacement metal gate deposition L Witters, H Arimura, F Sebaai, A Hikavyy, AP Milenin, R Loo, ... IEEE transactions on electron devices 64 (11), 4587-4593, 2017 | 80 | 2017 |
| AlGaN/GaN high electron mobility transistors grown on 150 mm Si (111) substrates with high uniformity K Cheng, M Leys, S Degroote, J Derluyn, B Sijmus, P Favia, O Richard, ... Japanese Journal of Applied Physics 47 (3R), 1553, 2008 | 79 | 2008 |
| Composition influence on the physical and electrical properties of SrxTi1− xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom … N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, ... Journal of Applied Physics 106 (9), 2009 | 73 | 2009 |
| First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs E Capogreco, L Witters, H Arimura, F Sebaai, C Porret, A Hikavyy, R Loo, ... IEEE Transactions on Electron Devices 65 (11), 5145-5150, 2018 | 72 | 2018 |
| Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop D Marcon, J Viaene, P Favia, H Bender, X Kang, S Lenci, S Stoffels, ... Proceedings of the 20th IEEE International Symposium on the Physical and …, 2013 | 71 | 2013 |
| The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance K Martens, IP Radu, S Mertens, X Shi, L Nyns, S Cosemans, P Favia, ... Journal of Applied Physics 112 (12), 2012 | 69 | 2012 |
| Nanobeam diffraction: Technique evaluation and strain measurement on complementary metal oxide semiconductor devices P Favia, MB Gonzales, E Simoen, P Verheyen, D Klenov, H Bender Journal of The Electrochemical Society 158 (4), H438, 2011 | 67 | 2011 |
| Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation K Martens, R Rooyackers, A Firrincieli, B Vincent, R Loo, B De Jaeger, ... Applied Physics Letters 98 (1), 2011 | 59 | 2011 |
| Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process L Witters, J Mitard, R Loo, G Eneman, H Mertens, DP Brunco, SH Lee, ... 2013 IEEE International Electron Devices Meeting, 20.4. 1-20.4. 4, 2013 | 58 | 2013 |
| Gate-last vs. gate-first technology for aggressively scaled EOT logic/RF CMOS A Veloso, LÅ Ragnarsson, MJ Cho, K Devriendt, K Kellens, F Sebaai, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 34-35, 2011 | 56 | 2011 |
| High quality Ge epitaxial layers in narrow channels on Si (001) substrates G Wang, E Rosseel, R Loo, P Favia, H Bender, M Caymax, MM Heyns, ... Applied Physics Letters 96 (11), 2010 | 55 | 2010 |
| 15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process J Mitard, L Witters, R Loo, SH Lee, JW Sun, J Franco, LÅ Ragnarsson, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 51 | 2014 |
| Stress simulations for optimal mobility group IV p-and nMOS FinFETs for the 14 nm node and beyond G Eneman, DP Brunco, L Witters, B Vincent, P Favia, A Hikavyy, ... 2012 International Electron Devices Meeting, 6.5. 1-6.5. 4, 2012 | 50 | 2012 |
| Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect L Witters, J Mitard, R Loo, S Demuynck, SA Chew, T Schram, Z Tao, ... 2015 Symposium on VLSI Technology (VLSI Technology), T56-T57, 2015 | 49 | 2015 |
| Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: Precursors and surface preparation A Delabie, DP Brunco, T Conard, P Favia, H Bender, A Franquet, ... Journal of The Electrochemical Society 155 (12), H937, 2008 | 49 | 2008 |
| Effect of boron doping on the wear behavior of the growth and nucleation surfaces of micro-and nanocrystalline diamond films JG Buijnsters, M Tsigkourakos, T Hantschel, FOV Gomes, T Nuytten, ... ACS applied materials & interfaces 8 (39), 26381-26391, 2016 | 47 | 2016 |
| Processing technologies for advanced Ge devices R Loo, AY Hikavyy, L Witters, A Schulze, H Arimura, D Cott, J Mitard, ... ECS Journal of Solid State Science and Technology 6 (1), P14, 2016 | 43 | 2016 |
| Vertical polyelectrolyte-gated organic field-effect transistors J Liu, L Herlogsson, A Sawatdee, P Favia, M Sandberg, X Crispin, ... Applied Physics Letters 97 (10), 2010 | 42 | 2010 |
