| Lateral 1.8 kV -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit K Tetzner, EB Treidel, O Hilt, A Popp, SB Anooz, G Wagner, A Thies, ... IEEE Electron Device Letters 40 (9), 1503-1506, 2019 | 143 | 2019 |
| Modulation‐Doped In2O3/ZnO Heterojunction Transistors Processed from Solution D Khim, YH Lin, S Nam, H Faber, K Tetzner, R Li, Q Zhang, J Li, X Zhang, ... Advanced Materials 29 (19), 1605837, 2017 | 125 | 2017 |
| Recent progress in photonic processing of metal‐oxide transistors E Yarali, C Koutsiaki, H Faber, K Tetzner, E Yengel, P Patsalas, ... Advanced Functional Materials 30 (20), 1906022, 2020 | 110 | 2020 |
| A novel laboratory-based hard X-ray photoelectron spectroscopy system A Regoutz, M Mascheck, T Wiell, SK Eriksson, C Liljenberg, K Tetzner, ... Review of Scientific Instruments 89 (7), 2018 | 97 | 2018 |
| Photonic curing of sol–gel derived HfO2 dielectrics for organic field-effect transistors K Tetzner, KA Schroder, K Bock Ceramics International 40 (10), 15753-15761, 2014 | 61 | 2014 |
| Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp K Tetzner, YH Lin, A Regoutz, A Seitkhan, DJ Payne, TD Anthopoulos Journal of Materials Chemistry C 5 (45), 11724-11732, 2017 | 49 | 2017 |
| The impact of post-deposition annealing on the performance of solution-processed single layer In 2 O 3 and isotype In 2 O 3/ZnO heterojunction transistors K Tetzner, I Isakov, A Regoutz, DJ Payne, TD Anthopoulos Journal of Materials Chemistry C 5 (1), 59-64, 2017 | 45 | 2017 |
| Rapid laser-induced photochemical conversion of sol–gel precursors to In 2 O 3 layers and their application in thin-film transistors S Dellis, I Isakov, N Kalfagiannis, K Tetzner, TD Anthopoulos, ... Journal of Materials Chemistry C 5 (15), 3673-3677, 2017 | 45 | 2017 |
| Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation K Tetzner, A Thies, E Bahat Treidel, F Brunner, G Wagner, J Würfl Applied Physics Letters 113 (17), 2018 | 41 | 2018 |
| Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices K Tetzner, O Hilt, A Popp, SB Anooz, J Würfl Microelectronics Reliability 114, 113951, 2020 | 39 | 2020 |
| Rapid photonic curing of solution-processed In2O3 layers on flexible substrates NM Twyman, K Tetzner, TD Anthopoulos, DJ Payne, A Regoutz Applied Surface Science 479, 974-979, 2019 | 29 | 2019 |
| Lateral and vertical power transistors in GaN and Ga2O3 O Hilt, E Bahat Treidel, M Wolf, C Kuring, K Tetzner, H Yazdani, A Wentzel, ... IET Power Electronics 12 (15), 3919-3927, 2019 | 28 | 2019 |
| SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes K Tetzner, K Egbo, M Klupsch, RS Unger, A Popp, TS Chou, SB Anooz, ... Applied Physics Letters 120 (11), 2022 | 27 | 2022 |
| Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors MU Chaudhry, N Wang, K Tetzner, A Seitkhan, Y Miao, Y Sun, MC Petty, ... Advanced Electronic Materials 5 (7), 1800985, 2019 | 27 | 2019 |
| Low-voltage solution-processed hybrid light-emitting transistors MU Chaudhry, K Tetzner, YH Lin, S Nam, C Pearson, C Groves, MC Petty, ... ACS applied materials & interfaces 10 (22), 18445-18449, 2018 | 24 | 2018 |
| Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application TS Chou, P Seyidov, S Bin Anooz, R Grüneberg, M Pietsch, J Rehm, ... Applied Physics Letters 122 (5), 2023 | 19 | 2023 |
| High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression TS Chou, P Seyidov, SB Anooz, R Grüneberg, J Rehm, TTV Tran, ... Japanese Journal of Applied Physics 62 (SF), SF1004, 2023 | 17 | 2023 |
| Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling M Fregolent, E Brusaterra, C De Santi, K Tetzner, J Würfl, G Meneghesso, ... Applied Physics Letters 120 (16), 2022 | 16 | 2022 |
| On the conduction properties of vertical GaN n-channel trench MISFETs EB Treidel, O Hilt, V Hoffmann, F Brunner, N Bickel, A Thies, K Tetzner, ... IEEE Journal of the Electron Devices Society 9, 215-228, 2021 | 16 | 2021 |
| Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm− 1 K Tetzner, M Klupsch, A Popp, SB Anooz, TS Chou, Z Galazka, K Ickert, ... Japanese Journal of Applied Physics 62 (SF), SF1010, 2023 | 15 | 2023 |
Thomas AnthopoulosProfessor of Emerging Optoelectronics, The University of Manchester (UK)Verified email at manchester.ac.uk