Electromechanical piezoresistive sensing in suspended graphene membranes AD Smith, F Niklaus, A Paussa, S Vaziri, AC Fischer, M Sterner, ... Nano letters 13 (7), 3237-3242, 2013 | 449 | 2013 |
Piezoresistive properties of suspended graphene membranes under uniaxial and biaxial strain in nanoelectromechanical pressure sensors AD Smith, F Niklaus, A Paussa, S Schröder, AC Fischer, M Sterner, ... ACS nano 10 (11), 9879-9886, 2016 | 154 | 2016 |
13.2 A digital multimode polar transmitter supporting 40MHz LTE Carrier Aggregation in 28nm CMOS M Fulde, A Belitzer, Z Boos, M Bruennert, J Fritzin, H Geltinger, M Groinig, ... 2017 IEEE international solid-state circuits conference (ISSCC), 218-219, 2017 | 72 | 2017 |
Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations F Conzatti, N Serra, D Esseni, M De Michielis, A Paussa, P Palestri, ... IEEE transactions on electron devices 58 (6), 1583-1593, 2011 | 40 | 2011 |
A manufacturable process integration approach for graphene devices S Vaziri, G Lupina, A Paussa, AD Smith, C Henkel, G Lippert, J Dabrowski, ... Solid-State Electronics 84, 185-190, 2013 | 32 | 2013 |
An exact solution of the linearized Boltzmann transport equation and its application to mobility calculations in graphene bilayers A Paussa, D Esseni Journal of Applied Physics 113 (9), 2013 | 28 | 2013 |
Simulation of the performance of graphene FETs with a semiclassical model, including band-to-band tunneling A Paussa, G Fiori, P Palestri, M Geromel, D Esseni, G Iannaccone, ... IEEE Transactions on Electron Devices 61 (5), 1567-1574, 2014 | 25 | 2014 |
Low-field mobility and high-field drift velocity in graphene nanoribbons and graphene bilayers M Bresciani, A Paussa, P Palestri, D Esseni, L Selmi 2010 International Electron Devices Meeting, 32.1. 1-32.1. 4, 2010 | 23 | 2010 |
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms A Paussa, M Geromel, P Palestri, M Bresciani, D Esseni, L Selmi 2011 International Electron Devices Meeting, 11.7. 1-11.7. 4, 2011 | 17 | 2011 |
Pseudospectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors A Paussa, F Conzatti, D Breda, R Vermiglio, D Esseni, P Palestri IEEE transactions on electron devices 57 (12), 3239-3249, 2010 | 16 | 2010 |
Comparison between pseudospectral and discrete geometric methods for modeling quantization effects in nanoscale electron devices D Breda, D Esseni, A Paussa, R Specogna, F Trevisan, R Vermiglio IEEE transactions on magnetics 48 (2), 203-206, 2012 | 8 | 2012 |
System and method for a successive approximation analog-to-digital converter A Paussa, F Conzatti US Patent 10,790,842, 2020 | 6 | 2020 |
Discrete geometric approach for modelling quantization effects in nanoscale electron devices A Paussa, R Specogna, D Esseni, F Trevisan Journal of Computational Electronics 13, 287-299, 2014 | 6 | 2014 |
Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors A Paussa, F Conzatti, D Breda, R Vermiglio, D Esseni 2010 International Conference on Simulation of Semiconductor Processes and …, 2010 | 5 | 2010 |
Signed-RFDAC architectures enabling wideband and efficient 5G transmitters D Ponton, M Kalcher, A Paussa, E Thaller, F Kuttner, D Gruber US Patent 10,651,869, 2020 | 2 | 2020 |
Numerical simulation of advanced CMOS and beyond CMOS nanoscale transistors A Paussa Università degli Studi di Udine, 2013 | 2 | 2013 |
Comparison between pseudospectral and discrete geometric methods for modelling quantization effects in nanoscale electron devices F Trevisan, R Specogna, D Breda, D Esseni, A Paussa, R Vermiglio Proceedings of the 18th Conference on the Computation of Electromagnetic …, 2011 | 1 | 2011 |
Calibration system and method for SAR ADCs M Kanzian, A Paussa, F Conzatti, J Semmler US Patent App. 18/047,896, 2024 | | 2024 |
Phonon limited uniform transport in bilayer graphene transistors A Paussa, M Bresciani, D Esseni, P Palestri, L Selmi 2011 Proceedings of the European Solid-State Device Research Conference …, 2011 | | 2011 |
Silicon and Column IV Semiconductor Devices-Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations F Conzatti, N Serra, D Esseni, M De Michielis, A Paussa, P Palestri, ... IEEE Transactions on Electron Devices 58 (6), 1583, 2011 | | 2011 |