| Device-quality β-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy K Sasaki, A Kuramata, T Masui, EG Víllora, K Shimamura, S Yamakoshi Applied Physics Express 5 (3), 035502, 2012 | 733 | 2012 |
| Large-size β-Ga2O3 single crystals and wafers EG Víllora, K Shimamura, Y Yoshikawa, K Aoki, N Ichinose Journal of Crystal Growth 270 (3-4), 420-426, 2004 | 703 | 2004 |
| Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping EG Víllora, K Shimamura, Y Yoshikawa, T Ujiie, K Aoki Applied Physics Letters 92 (20), 2008 | 543 | 2008 |
| Electrical control of the ferromagnetic phase transition in cobalt at room temperature D Chiba, S Fukami, K Shimamura, N Ishiwata, K Kobayashi, T Ono Nature materials 10 (11), 853-856, 2011 | 522 | 2011 |
| Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications K Shimamura, H Takeda, T Kohno, T Fukuda Journal of crystal growth 163 (4), 388-392, 1996 | 256 | 1996 |
| Nanostructured WO3/BiVO4 Photoanodes for Efficient Photoelectrochemical Water Splitting Y Pihosh, I Turkevych, K Mawatari, T Asai, T Hisatomi, J Uemura, M Tosa, ... Small 10 (18), 3692-3699, 2014 | 255 | 2014 |
| Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy Y Oshima, EG Víllora, Y Matsushita, S Yamamoto, K Shimamura Journal of Applied Physics 118 (8), 2015 | 247 | 2015 |
| Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals K Shimamura, EG Víllora, T Ujiie, K Aoki Applied Physics Letters 92 (20), 2008 | 227 | 2008 |
| Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates Y Oshima, EG Víllora, K Shimamura Applied Physics Express 8 (5), 055501, 2015 | 222 | 2015 |
| Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization D Chiba, M Kawaguchi, S Fukami, N Ishiwata, K Shimamura, K Kobayashi, ... Nature communications 3 (1), 888, 2012 | 200 | 2012 |
| Band structures of perovskite-like fluorides for vacuum-ultraviolet-transparent lens materials T Nishimatsu, N Terakubo, H Mizuseki, Y Kawazoe, DA Pawlak, ... Japanese journal of applied physics 41 (4A), L365, 2002 | 194 | 2002 |
| Donor structure and electric transport mechanism in M Yamaga, EG Víllora, K Shimamura, N Ichinose, M Honda Physical Review B 68 (15), 155207, 2003 | 190 | 2003 |
| Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O3 EG Víllora, K Shimamura, K Kitamura, K Aoki Applied physics letters 88 (3), 2006 | 187 | 2006 |
| Electrical control of Curie temperature in cobalt using an ionic liquid film K Shimamura, D Chiba, S Ono, S Fukami, N Ishiwata, M Kawaguchi, ... Applied Physics Letters 100 (12), 2012 | 182 | 2012 |
| Interpretation of XPS O (1s) in mixed oxides proved on mixed perovskite crystals DA Pawlak, M Ito, M Oku, K Shimamura, T Fukuda The Journal of Physical Chemistry B 106 (2), 504-507, 2002 | 162 | 2002 |
| Epitaxial growth of GaN on (1 0 0) β-Ga2O3 substrates by metalorganic vapor phase epitaxy K Shimamura, EG Víllora, K Domen, K Yui, K Aoki, N Ichinose Japanese Journal of Applied Physics 44 (1L), L7, 2004 | 147 | 2004 |
| Temperature dependence of Ce: YAG single-crystal phosphors for high-brightness white LEDs/LDs S Arjoca, EG Víllora, D Inomata, K Aoki, Y Sugahara, K Shimamura Materials Research Express 2 (5), 055503, 2015 | 139 | 2015 |
| Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature EG Villora, K Shimamura, T Ujiie, K Aoki Applied Physics Letters 92 (20), 2008 | 133 | 2008 |
| Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy Y Oshima, EG Vίllora, K Shimamura Journal of Crystal Growth 410, 53-58, 2015 | 127 | 2015 |
| Band bending and surface defects in β-Ga2O3 TC Lovejoy, R Chen, X Zheng, EG Villora, K Shimamura, H Yoshikawa, ... Applied Physics Letters 100 (18), 2012 | 124 | 2012 |
