Tunneling Diode Based on WSe2/SnS2 Heterostructure Incorporating High Detectivity and Responsivity X Zhou, X Hu, S Zhou, H Song, Q Zhang, L Pi, L Li, H Li, J Lü, T Zhai Advanced Materials 30 (7), 1703286, 2018 | 384 | 2018 |
Emerging in‐plane anisotropic two‐dimensional materials L Li, W Han, L Pi, P Niu, J Han, C Wang, B Su, H Li, J Xiong, Y Bando, ... InfoMat 1 (1), 54-73, 2019 | 321 | 2019 |
2D GeP: an unexploited low‐symmetry semiconductor with strong in‐plane anisotropy L Li, W Wang, P Gong, X Zhu, B Deng, X Shi, G Gao, H Li, T Zhai Advanced materials 30 (14), 1706771, 2018 | 290 | 2018 |
Recent progress on 2D noble‐transition‐metal dichalcogenides L Pi, L Li, K Liu, Q Zhang, H Li, T Zhai Advanced Functional Materials 29 (51), 1904932, 2019 | 277 | 2019 |
Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures W Wu, Q Zhang, X Zhou, L Li, J Su, F Wang, T Zhai Nano Energy 51, 45-53, 2018 | 260 | 2018 |
Few‐Layered PtS2 Phototransistor on h‐BN with High Gain L Li, W Wang, Y Chai, H Li, M Tian, T Zhai Advanced Functional Materials 27 (27), 1701011, 2017 | 231 | 2017 |
Submillimeter 2D Bi2Se3 Flakes toward High‐Performance Infrared Photodetection at Optical Communication Wavelength F Wang, L Li, W Huang, L Li, B Jin, H Li, T Zhai Advanced Functional Materials 28 (33), 1802707, 2018 | 212 | 2018 |
Strong in-plane anisotropies of optical and electrical response in layered dimetal chalcogenide L Li, P Gong, W Wang, B Deng, L Pi, J Yu, X Zhou, X Shi, H Li, T Zhai ACS nano 11 (10), 10264-10272, 2017 | 187 | 2017 |
Highly In‐Plane Anisotropic 2D GeAs2 for Polarization‐Sensitive Photodetection L Li, P Gong, D Sheng, S Wang, W Wang, X Zhu, X Shi, F Wang, W Han, ... Advanced Materials 30 (50), 1804541, 2018 | 180 | 2018 |
Highly In‐Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity L Pi, C Hu, W Shen, L Li, P Luo, X Hu, P Chen, D Li, Z Li, X Zhou, T Zhai Advanced Functional Materials 31 (3), 2006774, 2021 | 156 | 2021 |
A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film K Liu, B Jin, W Han, X Chen, P Gong, L Huang, Y Zhao, L Li, S Yang, ... Nature Electronics 4 (12), 906-913, 2021 | 151 | 2021 |
Interlayer Coupling Induced Infrared Response in WS2/MoS2 Heterostructures Enhanced by Surface Plasmon Resonance G Wang, L Li, W Fan, R Wang, S Zhou, JT Lü, L Gan, T Zhai Advanced Functional Materials 28 (22), 1800339, 2018 | 151 | 2018 |
2D ternary chalcogenides T Gao, Q Zhang, L Li, X Zhou, L Li, H Li, T Zhai Advanced Optical Materials 6 (14), 1800058, 2018 | 146 | 2018 |
Ternary Ta2NiSe5 Flakes for a High‐Performance Infrared Photodetector L Li, W Wang, L Gan, N Zhou, X Zhu, Q Zhang, H Li, M Tian, T Zhai Advanced Functional Materials 26 (45), 8281-8289, 2016 | 143 | 2016 |
Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse C Tan, S Yin, J Chen, Y Lu, W Wei, H Du, K Liu, F Wang, T Zhai, L Li ACS nano 15 (5), 8328-8337, 2021 | 134 | 2021 |
Two-dimensional inorganic molecular crystals W Han, P Huang, L Li, F Wang, P Luo, K Liu, X Zhou, H Li, X Zhang, Y Cui, ... Nature communications 10 (1), 4728, 2019 | 125 | 2019 |
Chemical Vapor Deposition Growth of High Crystallinity Sb2Se3 Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors Z Ma, S Chai, Q Feng, L Li, X Li, L Huang, D Liu, J Sun, R Jiang, T Zhai, ... Small 15 (9), 1805307, 2019 | 114 | 2019 |
Fully depleted self‐aligned heterosandwiched van der Waals photodetectors F Wang, Z Liu, T Zhang, M Long, X Wang, R Xie, H Ge, H Wang, J Hou, ... Advanced Materials 34 (39), 2203283, 2022 | 107 | 2022 |
Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga2In4S9 toward High‐Performance UV Photodetection F Wang, T Gao, Q Zhang, ZY Hu, B Jin, L Li, X Zhou, H Li, ... Advanced Materials 31 (2), 1806306, 2019 | 105 | 2019 |
Self‐limited epitaxial growth of ultrathin nonlayered CdS flakes for high‐performance photodetectors B Jin, P Huang, Q Zhang, X Zhou, X Zhang, L Li, J Su, H Li, T Zhai Advanced Functional Materials 28 (20), 1800181, 2018 | 102 | 2018 |