| Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017 | 587 | 2017 |
| Vertical nanowire InGaAs MOSFETs fabricated by a top-down approach X Zhao, J Lin, C Heidelberger, EA Fitzgerald, JA del Alamo 2013 IEEE International Electron Devices Meeting, 28.4. 1-28.4. 4, 2013 | 58 | 2013 |
| Sub-10-nm-diameter InGaAs vertical nanowire MOSFETs: Ni versus Mo contacts X Zhao, C Heidelberger, EA Fitzgerald, W Lu, A Vardi, JA del Alamo IEEE Transactions on Electron Devices 65 (9), 3762-3768, 2018 | 45 | 2018 |
| High-power (> 300 mW) on-chip laser with passively aligned silicon-nitride waveguide DBR cavity D Kharas, JJ Plant, W Loh, RB Swint, S Bramhavar, C Heidelberger, ... IEEE Photonics Journal 12 (6), 1-12, 2020 | 35 | 2020 |
| Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers D Kohen, XS Nguyen, RI Made, C Heidelberger, KH Lee, KEK Lee, ... Journal of Crystal Growth 478, 64-70, 2017 | 25 | 2017 |
| Heteroepitaxial growth of In0. 30Ga0. 70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer D Kohen, XS Nguyen, S Yadav, A Kumar, RI Made, C Heidelberger, ... AIP Advances 6 (8), 2016 | 21 | 2016 |
| GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain C Heidelberger, EA Fitzgerald Journal of Applied Physics 123 (16), 2018 | 20 | 2018 |
| Source/drain asymmetry in InGaAs vertical nanowire MOSFETs X Zhao, C Heidelberger, EA Fitzgerald, JA del Alamo IEEE Transactions on Electron Devices 64 (5), 2161-2165, 2017 | 9 | 2017 |
| High power (> 300 mW) 1550 nm on-chip laser realized using passively aligned hybrid integration D Kharas, J Plant, S Bramhavar, W Loh, R Swint, C Sorace-Agaskar, ... CLEO: Science and Innovations, STu3M. 3, 2020 | 8 | 2020 |
| Efficient Optical Coupling between III-V Semiconductor and SiNx Waveguides via Heteroepitaxial Integration C Heidelberger, C Sorace-Agaskar, JJ Plant, D Kharas, RB Swint, ... 2021 IEEE Photonics Conference (IPC), 1-2, 2021 | 7 | 2021 |
| Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique C Monmeyran, IF Crowe, RM Gwilliam, C Heidelberger, E Napolitani, ... Journal of Applied Physics 123 (16), 2018 | 7 | 2018 |
| GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD C Heidelberger, EA Fitzgerald Journal of Applied Physics 121 (4), 2017 | 7 | 2017 |
| Optical antenna enhanced spontaneous emission rate in electrically injected nanoscale III–V led SA Fortuna, C Heidelberger, K Messer, K Han, EA Fitzgerald, ... 2016 International Semiconductor Laser Conference (ISLC), 1-2, 2016 | 7 | 2016 |
| Heavy p-type carbon doping of MOCVD GaAsP using CBrCl3 C Heidelberger, EA Fitzgerald Journal of Crystal Growth 446, 7-11, 2016 | 6 | 2016 |
| InGaAsP/InP membrane gain sections for III-V/SiNx heterogeneous photonic integration C Heidelberger, CT Santis, JJ Plant, EM Morissette, D Kharas, RB Swint, ... CLEO: Science and Innovations, STh2H. 1, 2021 | 5 | 2021 |
| Low-loss germanium-on-silicon waveguides and ring resonators for the mid-wave infrared R Morgan, C Heidelberger, D Kharas, K Cahoy, C Sorace-Agaskar CLEO: Science and Innovations, SW5O. 1, 2022 | 3 | 2022 |
| Characterization of dopant diffusion, mobility, activation and deactivation effects for n-type dopants with long-dwell laser spike annealing S Chen, Y Wang, C Heidelberger, M Thompson 11th International Workshop on Junction Technology (IWJT), 128-131, 2011 | 2 | 2011 |
| Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film J Wang, C Heidelberger, EA Fitzgerald, NJ Quitoriano Journal of Crystal Growth 535, 125541, 2020 | 1 | 2020 |
| Nanoscale III-V light emitting diode with antenna-enhanced 250 picosecond spontaneous emission lifetime SA Fortuna, C Heidelberger, E Yablonovitch, EA Fitzgerald, MC Wu 2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018 | 1 | 2018 |
| Tunable semiconductor band gap reduction by strained sidewall passivation C Heidelberger, J Kim, N Li, W Liu, DK Sadana US Patent 9,865,520, 2018 | 1 | 2018 |