| Growth of uniform Mg-doped p-AlGaN nanowires using plasma-assisted molecular beam epitaxy technique for UV-A emitters R Sarkar, S Bhunia, D Jana, D Nag, S Chatterjee, A Laha Nanotechnology 33 (38), 384001, 2022 | 4 | 2022 |
| Ultrafast green single photon emission from an InGaN quantum dot-in-a-GaN nanowire at room temperature S Bhunia, A Majumder, S Chatterjee, R Sarkar, D Nag, K Saha, ... Applied Physics Letters 125 (4), 2024 | 3 | 2024 |
| Investigating defects in InGaN based optoelectronics: from material and device perspective D Nag, S Bhunia, R Sarkar, S Chatterjee, A Laha Materials Research Express 10 (2), 024004, 2023 | 2 | 2023 |
| InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond S Chatterjee, SS Sahu, B Mallick, U Singh, S Bhunia, R Sarkar, D Saha, ... physica status solidi (RRL)–Rapid Research Letters 18 (12), 2400147, 2024 | 1 | 2024 |
| Beyond 5 GHz excitation of a ZnO-based high-overtone bulk acoustic resonator on SiC substrate P Panda, S Chatterjee, S Tallur, A Laha Scientific Reports 13 (1), 13329, 2023 | 1 | 2023 |
| Unraveling the Origin of Mysterious Luminescence peak at 3.45 eV in GaN Nanowires S Bhunia, S Chatterjee, R Sarkar, D Nag, S Mahapatra, A Laha arXiv preprint arXiv:2410.22924, 2024 | | 2024 |
| Role of Ga-flux in indium incorporation and emission properties of self-assembled InGaN nanowires grown on Si (111) S Chatterjee, R Sarkar, S Bhunia, D Gayakwad, D Saha, A Laha Materials Science in Semiconductor Processing 180, 108561, 2024 | | 2024 |
Apurba LahaProfessor, Department of Electrical Engineering, Indian Institute of Technology BombayVerified email at ee.iitb.ac.in
