Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy U Serincan, B Arpapay Semiconductor Science and Technology 34 (3), 035013, 2019 | 15 | 2019 |
A comparative study on GaSb epilayers grown on nominal and vicinal Si (100) substrates by molecular beam epitaxy B Arpapay, YE Suyolcu, G Çorapçıoğlu, PA Van Aken, MA Gülgün, ... Semiconductor Science and Technology 36 (2), 025011, 2020 | 11 | 2020 |
Redundant Sb condensation on GaSb epilayers grown by molecular beam epitaxy during cooling procedure B Arpapay, S Şahin, B Arıkan, U Serincan Thin solid films 564, 110-114, 2014 | 8 | 2014 |
The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number F Sonmez, S Ardali, B Arpapay, E Tiras Physica B: Condensed Matter 630, 413703, 2022 | 5 | 2022 |
The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates B Arpapay, U Serincan Superlattices and Microstructures 140, 106450, 2020 | 5 | 2020 |
Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy B Arpapay, Ö Duygulu, U Serincan Materials Science in Semiconductor Processing 111, 104990, 2020 | 3 | 2020 |
GaAs/AlGaAs tabanlı yarıiletken yapılardan aygıt üretimi ve karakterizasyonu B Arpapay PQDT-Global, 2010 | 3 | 2010 |
Convex-like GaAs nanowires grown on Si (111) substrates B Arpapay, U Serincan Materials Science in Semiconductor Processing 107, 104817, 2020 | 2 | 2020 |
A comparative photoluminescence study on Mn-Free GaAs/AlAs and Mn-containing Ga1-xMnxAs/AlAs quantum wells (QWs) grown on various orientations by MBE M Gunes, O Erken, C Gumus, E Yalaz, E Pesen, MO Ukelge, B Arpapay, ... Philosophical Magazine 96 (3), 223-229, 2016 | 2 | 2016 |
Structural and optical properties of electrochemically grown fluorine doped zinc oxide rods PB Ozden, A Arslan, B Arpapay, S Ilican, E Hur, M Caglar, Y Caglar, ... Journal of Nanoelectronics and Optoelectronics 9 (5), 590-595, 2014 | 2 | 2014 |
Effect of tilt angle and drying temperature on the surface coverage rate of polystyrene nanospheres in evaporation-driven self-assembly process AA Ergürhan, O Şenel, E Yılmaz, B Arpapay, M Kulakcı, U Serincan Journal of Micro/Nanopatterning, Materials, and Metrology 23 (1), 013001-013001, 2024 | 1 | 2024 |
Design and realization of XOR, OR, and NAND light logic gates using GaAs heterostructure F Sonmez, S Ardali, B Arpapay, U Serincan, E Tiras Applied Physics A 131 (2), 1-8, 2025 | | 2025 |
Highly ordered polystyrene nanospheres by self-assembly method E Yılmaz, AA Ergürhan, O Şenel, B Arpapay, M Kulakcı, U Serincan Journal of Micro/Nanopatterning, Materials, and Metrology 24 (1), 013001-013001, 2025 | | 2025 |
Random alloy growth of AlAs0. 08Sb0. 92 on GaSb under high Group-V flux condition B Arpapay, AA Ergürhan, SE Erenoğlu, BÖ Alaydin, M Kulakcı, ... Materials Science in Semiconductor Processing 185, 109012, 2025 | | 2025 |
Light Logic Gates with GaAs‐Based Structures F Sonmez, S Ardali, B Arpapay, S Mutlu, AA Ergurhan, O Senel, ... physica status solidi (RRL)–Rapid Research Letters, 2024 | | 2024 |
Growth and characterization of group III-V nanostructures on Si substrates by MBE B Arpapay Eskişehir Teknik Üniversitesi, 2019 | | 2019 |
Characterization of a multilayer GaAs/AlGaAs broadband quantum well infrared photodetectors H Kuru, B Arpapay, T Karakulak, B Arıkan, B Aslan, U Serincan Proceedings of the European conference of chemical engineering, and European …, 2010 | | 2010 |