| 14nm FDSOI technology for high speed and energy efficient applications O Weber, E Josse, F Andrieu, A Cros, E Richard, P Perreau, E Baylac, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 117 | 2014 |
| Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics S Zhao, SY Woo, SM Sadaf, Y Wu, A Pofelski, DA Laleyan, RT Rashid, ... Apl Materials 4 (8), 2016 | 86 | 2016 |
| Photochemical carbon dioxide reduction on Mg-doped Ga (In) N nanowire arrays under visible light irradiation B AlOtaibi, X Kong, S Vanka, SY Woo, A Pofelski, F Oudjedi, S Fan, ... ACS Energy Letters 1 (1), 246-252, 2016 | 69 | 2016 |
| Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics X Liu, BH Le, SY Woo, S Zhao, A Pofelski, GA Botton, Z Mi Optics express 25 (24), 30494-30502, 2017 | 51 | 2017 |
| 2D strain mapping using scanning transmission electron microscopy Moiré interferometry and geometrical phase analysis A Pofelski, SY Woo, BH Le, X Liu, S Zhao, Z Mi, S Löffler, GA Botton Ultramicroscopy 187, 1-12, 2018 | 41 | 2018 |
| UTBB FDSOI scaling enablers for the 10nm node L Grenouillet, Q Liu, R Wacquez, P Morin, N Loubet, D Cooper, A Pofelski, ... 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2013 | 35 | 2013 |
| A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies B DeSalvo, P Morin, M Pala, G Ghibaudo, O Rozeau, Q Liu, A Pofelski, ... 2014 IEEE international electron devices meeting, 7.2. 1-7.2. 4, 2014 | 34 | 2014 |
| Selective area doping for Mott neuromorphic electronics S Deng, H Yu, TJ Park, ANMN Islam, S Manna, A Pofelski, Q Wang, Y Zhu, ... Science Advances 9 (11), eade4838, 2023 | 29 | 2023 |
| Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs F Andrieu, M Cassé, E Baylac, P Perreau, O Nier, D Rideau, R Berthelon, ... 2014 44th European Solid State Device Research Conference (ESSDERC), 106-109, 2014 | 26 | 2014 |
| Defect free strain relaxation of microcrystals on mesoporous patterned silicon A Heintz, B Ilahi, A Pofelski, G Botton, G Patriarche, A Barzaghi, S Fafard, ... Nature Communications 13 (1), 6624, 2022 | 21 | 2022 |
| The performance evaluation of direct detection electron energy-loss spectroscopy at 200 kV and 80 kV accelerating voltages S Cheng, A Pofelski, P Longo, RD Twesten, Y Zhu, GA Botton Ultramicroscopy 212, 112942, 2020 | 16 | 2020 |
| Sampling optimization of Moiré geometrical phase analysis for strain characterization in scanning transmission electron microscopy A Pofelski, S Ghanad-Tavakoli, DA Thompson, GA Botton Ultramicroscopy 209, 112858, 2020 | 15 | 2020 |
| A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology P Morin, S Maitrejean, F Allibert, E Augendre, Q Liu, N Loubet, ... Solid-State Electronics 117, 100-116, 2016 | 13 | 2016 |
| Design/technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs R Berthelon, F Andrieu, E Josse, R Bingert, O Weber, E Serret, A Aurand, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 11 | 2016 |
| Impact of laser anneal on NiPt silicide texture and chemical composition C Feautrier, AS Ozcan, C Lavoie, A Valery, R Beneyton, C Borowiak, ... Journal of Applied Physics 121 (22), 2017 | 10 | 2017 |
| Advanced TEM characterization for the development of 28-14nm nodes based on fully-depleted silicon-on-insulator technology G Servanton, L Clement, K Lepinay, F Lorut, R Pantel, A Pofelski, N Bicais Journal of Physics: Conference Series 471 (1), 012026, 2013 | 9 | 2013 |
| Eelspecnet: Deep convolutional neural network solution for electron energy loss spectroscopy deconvolution SS Mousavi M, A Pofelski, G Botton Microscopy and Microanalysis 27 (S1), 1626-1627, 2021 | 7 | 2021 |
| TEM illumination settings study for optimum spatial resolution and indexing reliability in crystal orientation mappings A Valery, A Pofelski, L Clément, F Lorut, EF Rauch Micron 92, 43-50, 2017 | 7 | 2017 |
| Innovative through-Si 3D lithography for ultimate self-aligned planar Double-Gate and Gate-All-Around nanowire transistors R Coquand, S Monfray, S Barraud, MP Samson, C Arvet, J Pradelles, ... 2013 Symposium on VLSI Technology, T226-T227, 2013 | 7 | 2013 |
| Domain nucleation across the metal-insulator transition of self-strained films A Pofelski, S Valencia, Y Kalcheim, P Salev, A Rivera, C Huang, ... Physical Review Materials 8 (3), 035003, 2024 | 5 | 2024 |
Gianluigi BottonMcMaster UniversityVerified email at mcmaster.ca
