| Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs N Seoane, JG Fernandez, K Kalna, E Comesana, A García-Loureiro IEEE Electron Device Letters 42 (10), 1416-1419, 2021 | 45 | 2021 |
| Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques JG Fernandez, G Etesse, E Comesaña, N Seoane, X Zhu, K Hirakawa, ... 2023 International Conference on Simulation of Semiconductor Processes and …, 2023 | 2 | 2023 |
| A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint A García-Loureiro, N Seoane, JG Fernández, E Comesaña, JC Pichel Plos one 18 (7), e0288964, 2023 | 1 | 2023 |
| An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs JG Fernandez, N Seoane, E Comesaña, JC Pichel, A Garcia-Loureiro Solid-State Electronics, 108710, 2023 | 1 | 2023 |
| A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET JG Fernandez, N Seoane, E Comesaña, A Garcia-Loureiro Solid-State Electronics, 108492, 2022 | 1 | 2022 |
| Pelgrom-based predictive model to estimate metal grain granularity and line edge roughness in advanced multigate MOSFETs JG Fernandez, N Seoane, E Comesaña, A García-Loureiro IEEE Journal of the Electron Devices Society, 2022 | 1 | 2022 |
| Impact of metal grain granularity on three gate-all-around advanced architectures JG Fernandez, N Seoane, E Comesaña, K Kalna, A García-Loureiro 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 1 | 2021 |
| A novel machine learning workflow to optimize cooling devices grounded in solid-state physics JG Fernandez, G Etesse, N Seoane, E Comesaña, K Hirakawa, ... | | 2024 |
| A general toolkit for advanced semiconductor transistors: from simulation to machine learning AJ García-Loureiro, N Seoane, JG Fernández, E Comesaña 2023 IEEE Latin American Electron Devices Conference (LAEDC), 1-4, 2023 | | 2023 |
| Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability A Garcia-Loureiro, N Seoane, JG Fernandez, E Comesaña, JC Pichel Figures of merit that characterize silicon gate-all-around nanowire FETs …, 2023 | | 2023 |
Enrique Comesaña FigueroaInvestigador, Universidad de Santiago de CompostelaVerified email at usc.es
