| A two-dimensional Fe-doped SnS2 magnetic semiconductor B Li, T Xing, M Zhong, L Huang, N Lei, J Zhang, J Li, Z Wei Nature communications 8 (1), 1958, 2017 | 390 | 2017 |
| Black arsenic: a layered semiconductor with extreme in‐plane anisotropy Y Chen, C Chen, R Kealhofer, H Liu, Z Yuan, L Jiang, J Suh, J Park, C Ko, ... Advanced materials 30 (30), 1800754, 2018 | 234 | 2018 |
| Perpendicular optical reversal of the linear dichroism and polarized photodetection in 2D GeAs Z Zhou, M Long, L Pan, X Wang, M Zhong, M Blei, J Wang, J Fang, ... ACS nano 12 (12), 12416-12423, 2018 | 201 | 2018 |
| Direct Vapor Phase Growth and Optoelectronic Application of Large Band Offset SnS2/MoS2 Vertical Bilayer Heterostructures with High Lattice Mismatch B Li, L Huang, M Zhong, Y Li, Y Wang, J Li, Z Wei Advanced Electronic Materials 2 (11), 1600298, 2016 | 186 | 2016 |
| Thickness‐dependent carrier transport characteristics of a new 2D elemental semiconductor: black arsenic M Zhong, Q Xia, L Pan, Y Liu, Y Chen, HX Deng, J Li, Z Wei Advanced Functional Materials 28 (43), 1802581, 2018 | 179 | 2018 |
| Band-like transport in small-molecule thin films toward high mobility and ultrahigh detectivity phototransistor arrays D Ji, T Li, J Liu, S Amirjalayer, M Zhong, ZY Zhang, X Huang, Z Wei, ... Nature communications 10 (1), 12, 2019 | 175 | 2019 |
| Large-scale 2D PbI 2 monolayers: experimental realization and their indirect band-gap related properties M Zhong, S Zhang, L Huang, J You, Z Wei, X Liu, J Li Nanoscale 9 (11), 3736-3741, 2017 | 133 | 2017 |
| High-performance single crystalline UV photodetectors of β-Ga2O3 M Zhong, Z Wei, X Meng, F Wu, J Li Journal of Alloys and Compounds 619, 572-575, 2015 | 126 | 2015 |
| Flexible photodetectors based on phase dependent PbI 2 single crystals M Zhong, L Huang, HX Deng, X Wang, B Li, Z Wei, J Li Journal of Materials Chemistry C 4 (27), 6492-6499, 2016 | 115 | 2016 |
| Substrates in the synthesis of two-dimensional materials via chemical vapor deposition B Qin, H Ma, M Hossain, M Zhong, Q Xia, B Li, X Duan Chemistry of Materials 32 (24), 10321-10347, 2020 | 97 | 2020 |
| Synthesis and Transport Properties of Large-Scale Alloy Co0.16Mo0.84S2 Bilayer Nanosheets B Li, L Huang, M Zhong, N Huo, Y Li, S Yang, C Fan, J Yang, W Hu, Z Wei, ... Acs Nano 9 (2), 1257-1262, 2015 | 94 | 2015 |
| Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS3) S Liu, W Xiao, M Zhong, L Pan, X Wang, HX Deng, J Liu, J Li, Z Wei Nanotechnology 29 (18), 184002, 2018 | 89 | 2018 |
| High-performance photodetectors based on Sb 2 S 3 nanowires: wavelength dependence and wide temperature range utilization M Zhong, X Wang, S Liu, B Li, L Huang, Y Cui, J Li, Z Wei Nanoscale 9 (34), 12364-12371, 2017 | 82 | 2017 |
| Air-stable ultrathin Cr3Te4 nanosheets with thickness-dependent magnetic biskyrmions B Li, X Deng, W Shu, X Cheng, Q Qian, Z Wan, B Zhao, X Shen, R Wu, ... Materials Today 57, 66-74, 2022 | 77 | 2022 |
| Direct Polarimetric Image Sensor and Wide Spectral Response Based on Quasi‐1D Sb2S3 Nanowire K Zhao, J Yang, M Zhong, Q Gao, Y Wang, X Wang, W Shen, C Hu, ... Advanced Functional Materials 31 (6), 2006601, 2021 | 74 | 2021 |
| In-plane optical and electrical anisotropy of 2D black arsenic M Zhong, H Meng, S Liu, H Yang, W Shen, C Hu, J Yang, Z Ren, B Li, ... ACS nano 15 (1), 1701-1709, 2020 | 66 | 2020 |
| Highly anisotropic solar-blind UV photodetector based on large-size two-dimensional α-MoO3 atomic crystals M Zhong, K Zhou, Z Wei, Y Li, T Li, H Dong, L Jiang, J Li, W Hu 2D Materials 5 (3), 035033, 2018 | 60 | 2018 |
| Few-layer WO3 nanosheets for high-performance UV-photodetectors J Liu, M Zhong, J Li, A Pan, X Zhu Materials Letters 148, 184-187, 2015 | 59 | 2015 |
| Rashba valleys and quantum Hall states in few-layer black arsenic F Sheng, C Hua, M Cheng, J Hu, X Sun, Q Tao, H Lu, Y Lu, M Zhong, ... Nature 593 (7857), 56-60, 2021 | 55 | 2021 |
| Tunable Schottky Barrier at MoSe2/Metal Interfaces with a Buffer Layer L Huang, B Li, M Zhong, Z Wei, J Li The Journal of Physical Chemistry C 121 (17), 9305-9311, 2017 | 54 | 2017 |
