| Manufacturing method of semiconductor device T Nabatame US Patent App. 12/116,940, 2009 | 497 | 2009 |
| Rutile-type TiO2 thin film for high-k gate insulator M Kadoshima, M Hiratani, Y Shimamoto, K Torii, H Miki, S Kimura, ... Thin Solid Films 424 (2), 224-228, 2003 | 312 | 2003 |
| Infrared Perfect Absorbers Fabricated by Colloidal Mask Etching of Al–Al2O3–Al Trilayers TD Dao, K Chen, S Ishii, A Ohi, T Nabatame, M Kitajima, T Nagao Acs Photonics 2 (7), 964-970, 2015 | 191 | 2015 |
| Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕ SiO2 interface K Iwamoto, Y Kamimuta, A Ogawa, Y Watanabe, S Migita, W Mizubayashi, ... Applied Physics Letters 92 (13), 2008 | 187 | 2008 |
| Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si (001) using energy-loss near-edge structures K Kimoto, Y Matsui, T Nabatame, T Yasuda, T Mizoguchi, I Tanaka, ... Applied physics letters 83 (21), 4306-4308, 2003 | 155 | 2003 |
| Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications S Aikawa, T Nabatame, K Tsukagoshi Applied Physics Letters 103 (17), 2013 | 149 | 2013 |
| Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies N Mitoma, S Aikawa, X Gao, T Kizu, M Shimizu, MF Lin, T Nabatame, ... Applied Physics Letters 104 (10), 2014 | 125 | 2014 |
| Hole array perfect absorbers for spectrally selective midwavelength infrared pyroelectric detectors TD Dao, S Ishii, T Yokoyama, T Sawada, RP Sugavaneshwar, K Chen, ... Acs Photonics 3 (7), 1271-1278, 2016 | 118 | 2016 |
| Comparative studies on oxygen diffusion coefficients for amorphous and γ-Al2O3 films using 18O isotope T Nabatame, T Yasuda, M Nishizawa, M Ikeda, T Horikawa, A Toriumi Japanese journal of applied physics 42 (12R), 7205, 2003 | 111 | 2003 |
| Low-temperature processable amorphous In-WO thin-film transistors with high mobility and stability T Kizu, S Aikawa, N Mitoma, M Shimizu, X Gao, MF Lin, T Nabatame, ... Applied Physics Letters 104 (15), 2014 | 109 | 2014 |
| Improvement in ferroelectricity of HfxZr1− xO2 thin films using ZrO2 seed layer T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Chikyow, A Ogura Applied Physics Express 10 (8), 081501, 2017 | 103 | 2017 |
| Transport superconducting properties of grain boundaries in Tl1Ba2Ca2Cu3Ox thin films T Nabatame, S Koike, OB Hyun, I Hirabayashi, H Suhara, K Nakamura Applied physics letters 65 (6), 776-778, 1994 | 99 | 1994 |
| Thermal stability of a thin HfO2/ultrathin SiO2/Si structure: interfacial Si oxidation and silicidation N Miyata, M Ichikawa, T Nabatame, T Horikawa, A Toriumi Japanese journal of applied physics 42 (2B), L138, 2003 | 91 | 2003 |
| Fabrication of highly metallic TiN films by pulsed laser deposition method for plasmonic applications RP Sugavaneshwar, S Ishii, TD Dao, A Ohi, T Nabatame, T Nagao ACS Photonics 5 (3), 814-819, 2017 | 88 | 2017 |
| Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition T Onaya, T Nabatame, N Sawamoto, A Ohi, N Ikeda, T Nagata, A Ogura Microelectronic Engineering 215, 111013, 2019 | 84 | 2019 |
| Metamaterial-enhanced vibrational absorption spectroscopy for the detection of protein molecules TS Bui, TD Dao, LH Dang, LD Vu, A Ohi, T Nabatame, YP Lee, T Nagao, ... Scientific Reports 6 (1), 32123, 2016 | 80 | 2016 |
| Thin-film transistors fabricated by low-temperature process based on Ga-and Zn-free amorphous oxide semiconductor S Aikawa, P Darmawan, K Yanagisawa, T Nabatame, Y Abe, ... Applied Physics Letters 102 (10), 2013 | 79 | 2013 |
| Growth mechanism of Ru films prepared by chemical vapor deposition using bis (ethylcyclopentadienyl) ruthenium precursor Y Matsui, M Hiratani, T Nabatame, Y Shimamoto, S Kimura Electrochemical and Solid-State Letters 4 (2), C9, 2001 | 76 | 2001 |
| Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si-and W-dopants N Mitoma, S Aikawa, W Ou-Yang, X Gao, T Kizu, MF Lin, A Fujiwara, ... Applied Physics Letters 106 (4), 2015 | 73 | 2015 |
| Femtosecond spectroscopic studies of the ultrafast relaxation process in the charge-transfer state of insulating cuprates K Matsuda, I Hirabayashi, K Kawamoto, T Nabatame, T Tokizaki, ... Physical review B 50 (6), 4097, 1994 | 72 | 1994 |
