| Strain engineering in 2D material‐based flexible optoelectronics J Du, H Yu, B Liu, M Hong, Q Liao, Z Zhang, Y Zhang Small Methods 5 (1), 2000919, 2021 | 132 | 2021 |
| Hidden vacancy benefit in monolayer 2D semiconductors X Zhang, Q Liao, Z Kang, B Liu, X Liu, Y Ou, J Xiao, J Du, Y Liu, L Gao, ... Advanced Materials 33 (7), 2007051, 2021 | 88 | 2021 |
| Piezotronic effect on interfacial charge modulation in mixed-dimensional van der Waals heterostructure for ultrasensitive flexible photodetectors J Du, Q Liao, M Hong, B Liu, X Zhang, H Yu, J Xiao, L Gao, F Gao, Z Kang, ... Nano Energy 58, 85-93, 2019 | 83 | 2019 |
| All‐van‐der‐Waals barrier‐free contacts for high‐mobility transistors X Zhang, H Yu, W Tang, X Wei, L Gao, M Hong, Q Liao, Z Kang, Z Zhang, ... Advanced Materials 34 (34), 2109521, 2022 | 75 | 2022 |
| Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure J Wen, W Tang, Z Kang, Q Liao, M Hong, J Du, X Zhang, H Yu, H Si, ... Advanced Science 8 (21), 2101417, 2021 | 58 | 2021 |
| Atomic‐Thin ZnO Sheet for Visible‐Blind Ultraviolet Photodetection H Yu, Q Liao, Z Kang, Z Wang, B Liu, X Zhang, J Du, Y Ou, M Hong, ... Small 16 (47), 2005520, 2020 | 58 | 2020 |
| Strain modulation on graphene/ZnO nanowire mixed-dimensional van der Waals heterostructure for high-performance photosensor S Liu, Q Liao, Z Zhang, X Zhang, S Lu, L Zhou, M Hong, Z Kang, Y Zhang Nano Research 10, 3476-3485, 2017 | 46 | 2017 |
| A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory W Tang, X Zhang, H Yu, L Gao, Q Zhang, X Wei, M Hong, L Gu, Q Liao, ... Small Methods 6 (4), 2101583, 2022 | 38 | 2022 |
| Synergistic‐engineered van der Waals photodiodes with high efficiency B Liu, X Zhang, J Du, J Xiao, H Yu, M Hong, L Gao, Y Ou, Z Kang, Q Liao, ... InfoMat 4 (3), e12282, 2022 | 23 | 2022 |
| Ultra-stable ZnO nanobelts in electrochemical environments M Hong, J Meng, H Yu, J Du, Y Ou, Q Liao, Z Kang, Z Zhang, Y Zhang Materials Chemistry Frontiers 5 (1), 430-437, 2021 | 21 | 2021 |
| Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing X Wei, X Zhang, H Yu, L Gao, W Tang, M Hong, Z Chen, Z Kang, Z Zhang, ... Nature Electronics 7 (2), 138-146, 2024 | 19 | 2024 |
| Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur‐Vacancy Engineering J Xiao, K Chen, X Zhang, X Liu, H Yu, L Gao, M Hong, L Gu, Z Zhang, ... Small Methods 7 (11), 2300611, 2023 | 17 | 2023 |
| The coupling effect characterization for van der Waals structures based on transition metal dichalcogenides B Liu, J Du, H Yu, M Hong, Z Kang, Z Zhang, Y Zhang Nano Research 14, 1734-1751, 2021 | 17 | 2021 |
| Controlling the Facet of ZnO during Wet Chemical Etching Its (000) O‐Terminated Surface M Sun, B Yu, M Hong, Z Li, F Lyu, X Li, Z Li, X Wei, Z Zhang, Y Zhang, ... Small 16 (14), 1906435, 2020 | 17 | 2020 |
| Gradient‐Strained Van Der Waals Heterojunctions for High‐Efficient Photodetectors H Zeng, H Yu, B Liu, S Lu, X Wei, L Gao, M Hong, X Zhang, Z Zhang, ... Advanced Functional Materials, 2400712, 2024 | 14 | 2024 |
| Universal transfer of full‐class metal electrodes for barrier‐free two‐dimensional semiconductor contacts M Hong, X Zhang, Y Geng, Y Wang, X Wei, L Gao, H Yu, Z Cao, Z Zhang, ... InfoMat 6 (1), e12491, 2024 | 10 | 2024 |
| Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable Transistors L Gao, X Zhang, H Yu, M Hong, X Wei, Z Chen, Q Zhang, Q Liao, Z Zhang, ... ACS Applied Materials & Interfaces 15 (32), 38603-38611, 2023 | 10 | 2023 |
| Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts Z Zhang, J Du, B Li, S Zhang, M Hong, X Zhang, Q Liao, Y Zhang APL Materials 5 (8), 2017 | 7 | 2017 |
| High-Spike Barrier Photodiodes Based on 2D Te/WS2 Heterostructures H Yu, Y Wang, H Zeng, Z Cao, Q Zhang, L Gao, M Hong, X Wei, Y Zheng, ... ACS Nano, 2024 | 4 | 2024 |
| In situ study of wet chemical etching of ZnO nanowires with different diameters and polar surfaces by LCTEM J Tian, M Sun, M Hong, B Yu, M Li, Y Geng, S Li, Y Zhang, Z Li, Q Chen Nanoscale 15 (19), 8781-8791, 2023 | 3 | 2023 |
Zhang Zhenguniversity of science and technology BeijingVerified email at ustb.edu.cn