José Menéndez

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John KouvetakisArizona State UniversityVerified email at asu.edu
Andrew ChizmeshyaAssociate professor, School of Molecular Sciences Arizona State UniversityVerified email at asu.edu
Chi Xu (徐驰)Arizona State UniversityVerified email at asu.edu
Vijay Richard D'CostaASM AmericaVerified email at asu.edu
Richard BeelerArizona State UniversityVerified email at asu.edu
James GallagherArizona State UniversityVerified email at asu.edu
Charutha SenaratneArizona State UniversityVerified email at asu.edu
Liying JiangIBMVerified email at asu.edu
Manuel CardonaMax Planck InstitutVerified email at fkf.mpg.de
Stefan ZollnerNew Mexico State UniversityVerified email at nmsu.edu
Toshihiro AokiIrvine Materials Research Institute, University of California, IrvineVerified email at uci.edu
Junqi XIEArgonne National LaboratoryVerified email at anl.gov
Patrick M. WallaceArizona State UniversityVerified email at asu.edu
A. K. SoodProfessor of Physics, Indian Institute of Science , Bangalore , IndiaVerified email at physics.iisc.ernet.in
Suchi GuhaProfessor of Physics, University of Missouri, ColumbiaVerified email at missouri.edu
Wolfgang WindlProfessor of Materials Science and Engineering, The Ohio State UniversityVerified email at osu.edu
Richard A. SorefResearch Professor of Engineering, The University of Massachusetts at BostonVerified email at rcn.com
Shui-Qing (Fisher) YuUniversity of ArkansasVerified email at uark.edu
Tylan WatkinsSandia National LabsVerified email at asu.edu
miguel melendez-liraDepto. de Fisica, Cinvestav-IPN y Depto. de Ciencias Basicas, UAM-AzcapotzalcoVerified email at fis.cinvestav.mx

José Menéndez

Professor of Physics, Arizona State University

Verified email at asu.edu

Condensed Matter Physics Semiconductor Physics Optical Spectroscopy Raman Scattering


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Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α− S n: Anharmonic effects J Menéndez, M Cardona Physical Review B 29 (4), 2051, 1984	964	1984
Resonance Raman scattering by confined LO and TO phonons in GaAs-AlAs superlattices AK Sood, J Menendez, M Cardona, K Ploog Physical review letters 54 (19), 2111, 1985	608	1985
Hybrid Group IV/III-V Semiconductor Structures J Kouvetakis, J Menendez US Patent App. 13/062,304, 2011	502	2011
GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon J Kouvetakis, M Bauer, J Menendez, CW Hu, IST Tsong, J Tolle US Patent 7,589,003, 2009	496	2009
Interface vibrational modes in GaAs-AlAs superlattices AK Sood, J Menendez, M Cardona, K Ploog Physical review letters 54 (19), 2115, 1985	491	1985
Optical critical points of thin-film alloys: A comparative study VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006	453	2006
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon J Kouvetakis, J Menendez, J Tolle, L Liao, D Samara-Rubio US Patent 7,582,891, 2009	374	2009
Ge–Sn semiconductors for band-gap and lattice engineering M Bauer, J Taraci, J Tolle, AVG Chizmeshya, S Zollner, DJ Smith, ... Applied physics letters 81 (16), 2992-2994, 2002	344	2002
Tin-based group IV semiconductors: New platforms for opto-and microelectronics on silicon J Kouvetakis, J Menendez, AVG Chizmeshya Annu. Rev. Mater. Res. 36 (1), 497-554, 2006	332	2006
Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ... Applied physics letters 97 (22), 2010	236	2010
Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis Applied physics letters 95 (13), 2009	235	2009
Type-I strained-layer heterostructures with a direct bandgap J Menendez, J Kouvetakis Applied physics letters 85 (7), 1175-1177, 2004	232	2004
Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAs J Menendéz, M Cardona Physical Review B 31 (6), 3696, 1985	191	1985
Perfectly tetragonal, tensile-strained Ge on Ge1− ySny buffered Si (100) YY Fang, J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ... Applied physics letters 90 (6), 2007	161	2007
Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys VR D’Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez Physical Review Letters 102 (10), 107403, 2009	160	2009
First-principles quantum molecular-dynamics study of the vibrations of icosahedral GB Adams, JB Page, OF Sankey, K Sinha, J Menendez, DR Huffman Physical Review B 44 (8), 4052, 1991	158	1991
Phonons in GaAs-AlxGa1− xAs superlattices J Menéndez Journal of luminescence 44 (4-6), 285-314, 1989	154	1989
Empirical bond polarizability model for fullerenes S Guha, J Menendez, JB Page, GB Adams Physical Review B 53 (19), 13106, 1996	153	1996
Synthesis of ternary SiGeSn semiconductors on Si(100) via buffer layers M Bauer, C Ritter, PA Crozier, J Ren, J Menendez, G Wolf, J Kouvetakis Applied physics letters 83 (11), 2163-2165, 2003	149	2003
Raman scattering in Ge1− ySny alloys VR D’costa, J Tolle, R Roucka, CD Poweleit, J Kouvetakis, J Menendez Solid State Communications 144 (5-6), 240-244, 2007	142	2007

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