| Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide CJ Cochrane, J Blacksberg, MA Anders, PM Lenahan Scientific reports 6 (1), 37077, 2016 | 109 | 2016 |
| Relationship Between the 4H-SiC/SiO2 Interface Structure and Electronic Properties Explored by Electrically Detected Magnetic Resonance MA Anders, PM Lenahan, CJ Cochrane, AJ Lelis IEEE Transactions on Electron Devices 62 (2), 301-308, 2014 | 40 | 2014 |
| Multi-resonance frequency spin dependent charge pumping and spin dependent recombination-applied to the 4H-SiC/SiO2 interface MA Anders, PM Lenahan, AJ Lelis Journal of Applied Physics 122 (23), 2017 | 38 | 2017 |
| Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators MA Anders, PM Lenahan, CJ Cochrane, J Van Tol Journal of Applied Physics 124 (21), 2018 | 35 | 2018 |
| Ionizing radiation effects in 4H-SiC nMOSFETs studied with electrically detected magnetic resonance RJ Waskiewicz, MA Anders, PM Lenahan, AJ Lelis IEEE Transactions on Nuclear Science 64 (1), 197-203, 2016 | 22 | 2016 |
| Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors? MA Anders, PM Lenahan, AJ Lelis Applied Physics Letters 109 (14), 2016 | 19 | 2016 |
| Wafer-level electrically detected magnetic resonance: Magnetic resonance in a probing station DJ McCrory, MA Anders, JT Ryan, PR Shrestha, KP Cheung, ... IEEE Transactions on Device and Materials Reliability 18 (2), 139-143, 2018 | 14 | 2018 |
| Data-driven RRAM device models using Kriging interpolation I Hossen, MA Anders, L Wang, GC Adam Scientific Reports 12 (1), 5963, 2022 | 13 | 2022 |
| Slow-and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station DJ McCrory, MA Anders, JT Ryan, PR Shrestha, KP Cheung, ... Review of Scientific Instruments 90 (1), 2019 | 13 | 2019 |
| Effects of nitrogen on the interface density of states distribution in 4H-SiC metal oxide semiconductor field effect transistors: Super-hyperfine interactions and near … MA Anders, PM Lenahan, AH Edwards, PA Schultz, RM Van Ginhoven Journal of Applied Physics 124 (18), 2018 | 13 | 2018 |
| Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders Journal of Applied Physics 126 (14), 2019 | 11 | 2019 |
| Negative bias instability in 4H-SiC MOSFETs: Evidence for structural changes in the SiC MA Anders, PM Lenahan, AJ Lelis 2015 IEEE International Reliability Physics Symposium, 3E. 4.1-3E. 4.5, 2015 | 11 | 2015 |
| Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance PM Lenahan, MA Anders, RJ Waskiewicz, AJ Lelis Microelectronics Reliability 81, 1-6, 2018 | 9 | 2018 |
| Nonresonant transmission line probe for sensitive interferometric electron spin resonance detection PR Shrestha, N Abhyankar, MA Anders, KP Cheung, R Gougelet, JT Ryan, ... Analytical chemistry 91 (17), 11108-11115, 2019 | 8 | 2019 |
| A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping MA Anders, PM Lenahan, NJ Harmon, ME Flatté Journal of applied physics 128 (24), 2020 | 6 | 2020 |
| Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs MA Anders, PM Lenahan, J Follman, SD Arthur, J McMahon, L Yu, X Zhu, ... 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014 | 5 | 2014 |
| Combining electrically detected magnetic resonance techniques to study atomic-scale defects generated by hot-carrier stressing in HfO2/SiO2/Si transistors SJ Moxim, JP Ashton, MA Anders, JT Ryan Journal of Applied Physics 133 (14), 2023 | 4 | 2023 |
| Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs MA Anders, PM Lenahan, JT Ryan Materials Science Forum 1004, 573-580, 2020 | 4 | 2020 |
| Reliability and performance issues in SiC MOSFETs: Insight provided by spin dependent recombination JP Ashton, PM Lenahan, DJ Lichtenwalner, AJ Lelis, MA Anders 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 4 | 2019 |
| Wafer level EDMR: Magnetic resonance in a probing station DJ McCrory, MA Anders, JT Ryan, PR Shrestha, JP Campbell, ... 2017 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2017 | 4 | 2017 |
