| Energy conditions and stability in theories of gravity with nonminimal coupling to matter O Bertolami, MC Sequeira Physical Review D 79 (10), 104010, 2009 | 215 | 2009 |
| Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films TH Flemban, MC Sequeira, Z Zhang, S Venkatesh, E Alves, K Lorenz, ... Journal of Applied Physics 119 (6), 2016 | 58 | 2016 |
| Unravelling the secrets of the resistance of GaN to strongly ionising radiation MC Sequeira, JG Mattei, H Vazquez, F Djurabekova, K Nordlund, ... Communications physics 4 (1), 51, 2021 | 46 | 2021 |
| Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure N Ben Sedrine, TC Esteves, J Rodrigues, L Rino, MR Correia, ... Scientific Reports 5 (1), 13739, 2015 | 23 | 2015 |
| Thermal and chemical stability of the β-W2N nitride phase R Mateus, MC Sequeira, C Porosnicu, CP Lungu, A Hakola, E Alves Nuclear Materials and Energy 12, 462-467, 2017 | 22 | 2017 |
| RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO P Jozwik, S Magalhaes, R Ratajczak, C Mieszczynski, M Sequeira, ... physica status solidi (b) 256 (5), 1800364, 2019 | 17 | 2019 |
| Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations MC Sequeira, F Djurabekova, K Nordlund, JG Mattei, I Monnet, C Grygiel, ... Small 18 (49), 2102235, 2022 | 13 | 2022 |
| Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the … J Cardoso, NB Sedrine, P Jóźwik, MC Sequeira, CM Wetzel, C Grygiel, ... Journal of Materials Chemistry C 9 (28), 8809-8818, 2021 | 13 | 2021 |
| Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation P Jóźwik, JPS Cardoso, DF Carvalho, MRP Correia, MC Sequeira, ... Physical Chemistry Chemical Physics 24 (42), 25773-25787, 2022 | 5 | 2022 |
| Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells K Lorenz, A Redondo-Cubero, MB Lourenço, MC Sequeira, M Peres, ... Gallium Nitride Materials and Devices XI 9748, 29-37, 2016 | 3 | 2016 |
| Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations (Small 49/2022) MC Sequeira, F Djurabekova, K Nordlund, JG Mattei, I Monnet, C Grygiel, ... Small 18 (49), 2270265, 2022 | 2 | 2022 |
| Modified theories of gravity with non‐minimal curvature‐matter coupling O Bertolami, MC Sequeira AIP Conference Proceedings 1241 (1), 729-734, 2010 | 2 | 2010 |
| Effect of lattice voids on Rutherford backscattering dechanneling in tungsten X Jin, F Djurabekova, M Sequeira, K Lorenz, K Nordlund Journal of Physics D: Applied Physics 56 (6), 065303, 2023 | 1 | 2023 |
| RADIATION SENSORS BASED ON GAN MICROWIRES K Lorenz, D Verheij, MC Sequeira, M Peres, LC Alves, E Alves, ... Взаимодействие ионов с поверхностью ВИП-2021, 173-178, 2021 | | 2021 |
| A5-IMPACT OF ANNEALING TEMPERATURE ON STRUCTURAL AND OPTICAL PROPERTIES OF Ga2O3 THIN FILMS DEPOSITED USING RADIO FREQUENCY MAGNETRON SPUTTERING E Amar, M Peres, D Verheij, P Jozwik, M Sequeira, DR Pereira, DN Faye, ... Book of Abstracts, 55, 0 | | |
