Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient Z Zheng#, Y Zhang#, V Lopez-Dominguez, L Sánchez-Tejerina, J Shi, ... Nature communications 12 (1), 4555, 2021 | 171 | 2021 |
Ferrimagnets for spintronic devices: From materials to applications Y Zhang#, X Feng#, Z Zheng#, Z Zhang#, K Lin, X Sun, G Wang, J Wang, ... Applied Physics Reviews 10 (1), 011301, 2023 | 67 | 2023 |
Time-domain computing in memory using spintronics for energy-efficient convolutional neural network Y Zhang, J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, ... IEEE Transactions on Circuits and Systems I: Regular Papers 68 (3), 1193-1205, 2021 | 62 | 2021 |
Skyrmion-based ultra-low power electric-field-controlled reconfigurable (SUPER) logic gate Z Zhang, Y Zhu, Y Zhang, K Zhang, J Nan, Z Zheng, Y Zhang, W Zhao IEEE Electron Device Letters 40 (12), 1984-1987, 2019 | 61 | 2019 |
Compact modeling of perpendicular-magnetic-anisotropy double-barrier magnetic tunnel junction with enhanced thermal stability recording structure G Wang, Y Zhang, J Wang, Z Zhang, K Zhang, Z Zheng, JO Klein, ... IEEE Transactions on Electron Devices 66 (5), 2431-2436, 2019 | 58 | 2019 |
Enhanced spin-orbit torque and multilevel current-induced switching in W/Co− Tb/Pt heterostructure Z Zheng#, Y Zhang#, X Feng, K Zhang, J Nan, Z Zhang, G Wang, J Wang, ... Physical Review Applied 12 (4), 044032, 2019 | 56 | 2019 |
A self-matching complementary-reference sensing scheme for high-speed and reliable toggle spin torque MRAM J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, K Lin, ... IEEE Transactions on Circuits and Systems I: Regular Papers 67 (12), 4247-4258, 2020 | 36 | 2020 |
Design and fabrication of full wheatstone-bridge-based angular GMR sensors S Yan, Z Cao, Z Guo, Z Zheng, A Cao, Y Qi, Q Leng, W Zhao Sensors 18 (6), 1832, 2018 | 36 | 2018 |
IEEE Electron G Wang, Y Zhang, Z Zhang, Z Zheng, K Zhang, J Wang, JO Klein, ... Device Lett, 1991 | 34 | 1991 |
Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3 Z Zheng, Y Zhang, D Zhu, K Zhang, X Feng, Y He, L Chen, Z Zhang, D Liu, ... Chinese Physics B 29 (7), 078505, 2020 | 30 | 2020 |
Rectified tunnel magnetoresistance device with high on/off ratio for in-memory computing K Zhang, K Cao, Y Zhang, Z Huang, W Cai, J Wang, J Nan, G Wang, ... IEEE Electron Device Letters 41 (6), 928-931, 2020 | 28 | 2020 |
Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin–orbit torque in ferromagnetic multilayers K Zhang, L Chen, Y Zhang, B Hong, Y He, K Lin, Z Zhang, Z Zheng, ... Applied Physics Reviews 9 (1), 2022 | 26 | 2022 |
Ring-shaped Racetrack memory based on spin orbit torque driven chiral domain wall motions Y Zhang, X Zhang, J Hu, J Nan, Z Zheng, Z Zhang, Y Zhang, N Vernier, ... Scientific Reports 6 (1), 35062, 2016 | 25 | 2016 |
Strain sensing based on a microbottle resonator with cleaned-up spectrum Y Yin, Y Niu, M Ren, W Wu, W Zhao, J Nan, Z Zheng, Y Zhang, M Ding Optics Letters 43 (19), 4715-4718, 2018 | 22 | 2018 |
Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ... Applied Physics Letters 111 (5), 2017 | 19 | 2017 |
Large magnetoresistance and 15 boolean logic functions based on a ZnCoO film and diode combined device K Zhang, Y Zhang, Z Zhang, Z Zheng, G Wang, Y Zhang, Q Liu, S Yan, ... Advanced Electronic Materials 5 (3), 1800812, 2019 | 18 | 2019 |
High on/off ratio spintronic multi‐level memory unit for deep neural network K Zhang, X Jia, K Cao, J Wang, Y Zhang, K Lin, L Chen, X Feng, Z Zheng, ... Advanced Science 9 (13), 2103357, 2022 | 16 | 2022 |
Effective electrical manipulation of a topological antiferromagnet by orbital torques Z Zheng#, T Zeng#, T Zhao#, S Shi, L Ren, T Zhang, L Jia, Y Gu, R Xiao, ... Nature Communications 15 (1), 745, 2024 | 14 | 2024 |
Efficient Spin–Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer L Ren, C Zhou, X Song, HT Seng, L Liu, C Li, T Zhao, Z Zheng, J Ding, ... ACS nano 17 (7), 6400-6409, 2023 | 14 | 2023 |
3D ferrimagnetic device for multi-bit storage and efficient in-memory computing Z Zhang#, Z Zheng#, Y Zhang, J Sun, K Lin, K Zhang, X Feng, L Chen, ... IEEE Electron Device Letters 42 (2), 152-155, 2020 | 14 | 2020 |