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Zhenyi Zheng
Zhenyi Zheng
Beihang University & National University of Singapore
Verified email at buaa.edu.cn
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Year
Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient
Z Zheng#, Y Zhang#, V Lopez-Dominguez, L Sánchez-Tejerina, J Shi, ...
Nature communications 12 (1), 4555, 2021
1712021
Ferrimagnets for spintronic devices: From materials to applications
Y Zhang#, X Feng#, Z Zheng#, Z Zhang#, K Lin, X Sun, G Wang, J Wang, ...
Applied Physics Reviews 10 (1), 011301, 2023
672023
Time-domain computing in memory using spintronics for energy-efficient convolutional neural network
Y Zhang, J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (3), 1193-1205, 2021
622021
Skyrmion-based ultra-low power electric-field-controlled reconfigurable (SUPER) logic gate
Z Zhang, Y Zhu, Y Zhang, K Zhang, J Nan, Z Zheng, Y Zhang, W Zhao
IEEE Electron Device Letters 40 (12), 1984-1987, 2019
612019
Compact modeling of perpendicular-magnetic-anisotropy double-barrier magnetic tunnel junction with enhanced thermal stability recording structure
G Wang, Y Zhang, J Wang, Z Zhang, K Zhang, Z Zheng, JO Klein, ...
IEEE Transactions on Electron Devices 66 (5), 2431-2436, 2019
582019
Enhanced spin-orbit torque and multilevel current-induced switching in W/Co− Tb/Pt heterostructure
Z Zheng#, Y Zhang#, X Feng, K Zhang, J Nan, Z Zhang, G Wang, J Wang, ...
Physical Review Applied 12 (4), 044032, 2019
562019
A self-matching complementary-reference sensing scheme for high-speed and reliable toggle spin torque MRAM
J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, K Lin, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (12), 4247-4258, 2020
362020
Design and fabrication of full wheatstone-bridge-based angular GMR sensors
S Yan, Z Cao, Z Guo, Z Zheng, A Cao, Y Qi, Q Leng, W Zhao
Sensors 18 (6), 1832, 2018
362018
IEEE Electron
G Wang, Y Zhang, Z Zhang, Z Zheng, K Zhang, J Wang, JO Klein, ...
Device Lett, 1991
341991
Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3
Z Zheng, Y Zhang, D Zhu, K Zhang, X Feng, Y He, L Chen, Z Zhang, D Liu, ...
Chinese Physics B 29 (7), 078505, 2020
302020
Rectified tunnel magnetoresistance device with high on/off ratio for in-memory computing
K Zhang, K Cao, Y Zhang, Z Huang, W Cai, J Wang, J Nan, G Wang, ...
IEEE Electron Device Letters 41 (6), 928-931, 2020
282020
Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin–orbit torque in ferromagnetic multilayers
K Zhang, L Chen, Y Zhang, B Hong, Y He, K Lin, Z Zhang, Z Zheng, ...
Applied Physics Reviews 9 (1), 2022
262022
Ring-shaped Racetrack memory based on spin orbit torque driven chiral domain wall motions
Y Zhang, X Zhang, J Hu, J Nan, Z Zheng, Z Zhang, Y Zhang, N Vernier, ...
Scientific Reports 6 (1), 35062, 2016
252016
Strain sensing based on a microbottle resonator with cleaned-up spectrum
Y Yin, Y Niu, M Ren, W Wu, W Zhao, J Nan, Z Zheng, Y Zhang, M Ding
Optics Letters 43 (19), 4715-4718, 2018
222018
Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale
Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ...
Applied Physics Letters 111 (5), 2017
192017
Large magnetoresistance and 15 boolean logic functions based on a ZnCoO film and diode combined device
K Zhang, Y Zhang, Z Zhang, Z Zheng, G Wang, Y Zhang, Q Liu, S Yan, ...
Advanced Electronic Materials 5 (3), 1800812, 2019
182019
High on/off ratio spintronic multi‐level memory unit for deep neural network
K Zhang, X Jia, K Cao, J Wang, Y Zhang, K Lin, L Chen, X Feng, Z Zheng, ...
Advanced Science 9 (13), 2103357, 2022
162022
Effective electrical manipulation of a topological antiferromagnet by orbital torques
Z Zheng#, T Zeng#, T Zhao#, S Shi, L Ren, T Zhang, L Jia, Y Gu, R Xiao, ...
Nature Communications 15 (1), 745, 2024
142024
Efficient Spin–Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer
L Ren, C Zhou, X Song, HT Seng, L Liu, C Li, T Zhao, Z Zheng, J Ding, ...
ACS nano 17 (7), 6400-6409, 2023
142023
3D ferrimagnetic device for multi-bit storage and efficient in-memory computing
Z Zhang#, Z Zheng#, Y Zhang, J Sun, K Lin, K Zhang, X Feng, L Chen, ...
IEEE Electron Device Letters 42 (2), 152-155, 2020
142020
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