K. P. O'Donnell

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Robert MartinProfessor of Physics, Strathclyde UniversityVerified email at strath.ac.uk
Eduardo AlvesFull Researcher, DECN, Instituto Superior Técnico, Universidade de LisboaVerified email at tecnico.ulisboa.pt
Carol Trager-CowanDepartment of Physics, University of StrathclydeVerified email at strath.ac.uk
Sergio Manuel de Sousa PereiraCICECO and Physics Department University of AveiroVerified email at ua.pt
Paul R. EdwardsSenior Research Fellow, University of StrathclydeVerified email at strath.ac.uk
Peter J ParbrookStokes Professor of Nitride Materials, University College CorkVerified email at tyndall.ie
Michal BockowskiInstitute of High Pressure Physics PASVerified email at unipress.waw.pl
EMILIO NOGALES DIAZUniversidad Complutense de MadridVerified email at fis.ucm.es
Olivier BriotL2C, CNRS, Université Montpellier 2Verified email at univ-montp2.fr
Iman RoqanKAUSTVerified email at kaust.edu.sa
Sergi HernándezUniversitat de BarcelonaVerified email at ub.edu
J Frederick w Mosselmansfacility scientist, diamond light sourceVerified email at diamond.ac.uk
Ingrid MoermanProfessor, Ghent UniversityVerified email at ugent.be
Luis ArtusCSICVerified email at ija.csic.es
Teresa MonteiroDepartamento de Física e i3N, Universidade de AveiroVerified email at ua.pt
Nuno P. BarradasC2TN, DECN, Instituto Superior Técnico, Universidade de LisboaVerified email at ctn.tecnico.ulisboa.pt
Ben HourahineSenior Lecturer in photonic materials, University of StrathclydeVerified email at strath.ac.uk
DAVID PASTORUniversidad Complutense de MadridVerified email at ucm.es
DM BagnallMacquarie UniversityVerified email at mq.edu.au
Deepak UttamchandaniProfessor of Microsystems Engineering, University of Strathclyde, UKVerified email at strath.ac.uk

K. P. O'Donnell

ex-Strathclyde University

Verified email at strath.ac.uk - Homepage

Physics Luminescence Spectroscopy


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Temperature dependence of semiconductor band gaps KP O’Donnell, X Chen Applied Physics Letters 58 (25), 2924-2926, 1991	1460	1991
Origin of luminescence from InGaN diodes KP O'Donnell, RW Martin, PG Middleton Physical Review Letters 82 (1), 237, 1999	657	1999
Exciton localization and the Stokes’ shift in InGaN epilayers RW Martin, PG Middleton, KP O’Donnell, W Van der Stricht Applied Physics Letters 74 (2), 263-265, 1999	395	1999
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping S Pereira, MR Correia, E Pereira, KP O’Donnell, E Alves, AD Sequeira, ... Applied Physics Letters 80 (21), 3913-3915, 2002	287	2002
Compositional pulling effects in InxGa1-x N/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study S Pereira, MR Correia, E Pereira, KP O’Donnell, C Trager-Cowan, ... Physical Review B 64 (20), 205311, 2001	283	2001
Origin of the Stokes shift: a geometrical model of exciton spectra in 2D semiconductors F Yang, M Wilkinson, EJ Austin, KP O’Donnell Physical Review Letters 70 (3), 323, 1993	261	1993
Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state K Lorenz, N Franco, E Alves, IM Watson, RW Martin, KP O’Donnell Physical Review Letters 97 (8), 085501, 2006	185	2006
Luminescence decay in disordered low‐dimensional semiconductors X Chen, B Henderson, KP O’Donnell Applied Physics Letters 60 (21), 2672-2674, 1992	172	1992
Origin of the 0.97 eV luminescence in irradiated silicon KP O'Donnell, KM Lee, GD Watkins Physica B+ C 116 (1-3), 258-263, 1983	145	1983
Identification of the prime optical center in GaN: Eu3+ IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ... Physical Review B 81 (8), 085209, 2010	133	2010
Disorder and the optical spectroscopy of Cr3+-doped glasses: I. Silicate glasses F Rasheed, KP O'Donnell, B Henderson, DB Hollis Journal of Physics: Condensed Matter 3 (12), 1915, 1991	130	1991
Structural and optical properties of InGaN/GaN layers close to the critical layer thickness S Pereira, MR Correia, E Pereira, C Trager-Cowan, F Sweeney, ... Applied Physics Letters 81 (7), 1207-1209, 2002	125	2002
Raman-scattering study of the InGaN alloy over the whole composition range S Hernández, R Cuscó, D Pastor, L Artús, KP O'Donnell, RW Martin, ... J Appl Phys, 2005	122	2005
Structural analysis of InGaN epilayers KP O'Donnell, JFW Mosselmans, RW Martin, S Pereira, ME White Journal of Physics: Condensed Matter 13 (32), 6977, 2001	121	2001
Rare-earth doped III-nitrides for optoelectronic and spintronic applications VD (Eds.)K.P. O'Donnell Springer, 2010	120*	2010
Selectively excited photoluminescence from Eu-implanted GaN K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ... Applied Physics Letters 87 (11), 2005	114	2005
Optical linewidths of InGaN light emitting diodes and epilayers KP O’Donnell, T Breitkopf, H Kalt, W Van der Stricht, I Moerman, ... Applied physics letters 70 (14), 1843-1845, 1997	102	1997
Optical energies of AlInN epilayers K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ... Journal of Applied Physics 103 (7), 2008	92	2008
Rare earth doped III-nitrides for optoelectronics KP O'Donnell, B Hourahine The European Physical Journal-Applied Physics 36 (2), 91-103, 2006	91	2006
Disorder and the optical spectroscopy of Cr3+-doped glasses. II. Glasses with high and low ligand fields F Rasheed, KP O'Donnell, B Henderson, DB Hollis Journal of Physics: Condensed Matter 3 (21), 3825, 1991	91	1991

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