| Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors SP Ramanandan, A Giunto, EZ Stutz, B Reynier, ITFM Lefevre, M Rusu, ... Journal of Physics: Energy 5 (1), 014013, 2023 | 28 | 2023 |
| Anisotropic-strain-induced band gap engineering in nanowire-based quantum dots L Francaviglia, A Giunto, W Kim, P Romero-Gomez, J Vukajlovic-Plestina, ... Nano Letters 18 (4), 2393-2401, 2018 | 20 | 2018 |
| Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks SP Ramanandan, P Tomić, NP Morgan, A Giunto, A Rudra, K Ensslin, ... Nano Letters 22 (10), 4269-4275, 2022 | 17 | 2022 |
| Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy A Giunto, LE Webb, T Hagger, A Fontcuberta i Morral Physical Review Materials 7 (7), 074605, 2023 | 3 | 2023 |
| Co-Sputtered Monocrystalline GeSn for Infrared Photodetection A Giunto, N Humblot, L Burnier, A Krammer, A Schüler, AF i Morral 2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM), 1-2, 2020 | 3 | 2020 |
| THz characterization of GeSn monocrystalline thin films X Liu, A Giunto, JD Hutchinson, N Humblot, D Damry, RL Milot, ... 2022 47th International Conference on Infrared, Millimeter and Terahertz …, 2022 | 2 | 2022 |
| GeSn Defects and their Impact on Optoelectronic Properties: A Review A Giunto, A Fontcuberta i Morral Preprint, 2023 | 1* | 2023 |
| GeSn as next-generation material for short-wave infrared single-photon detection A Giunto EPFL, 2023 | 1 | 2023 |
| Defects in Ge and GeSn and their impact on optoelectronic properties A Giunto, A Fontcuberta i Morral Applied Physics Reviews 11 (4), 2024 | | 2024 |
| Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation FI Morral, P Rajrupa, A Giunto, A Kukolova | | 2019 |
Anna Fontcuberta i MorralEcole Polytechnique Fédérale de LausanneVerified email at epfl.ch