| SIMON-A simulator for single-electron tunnel devices and circuits C Wasshuber, H Kosina, S Selberherr IEEE Transactions on computer-aided design of integrated circuits and …, 1997 | 542 | 1997 |
| Computational single-electronics C Wasshuber Springer Science & Business Media, 2012 | 402 | 2012 |
| Method for manufacturing and structure of transistor with low-k spacer C Wasshuber US Patent App. 10/214,667, 2003 | 236 | 2003 |
| Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design S Mahapatra, V Vaish, C Wasshuber, K Banerjee, AM Ionescu IEEE Transactions on Electron Devices 51 (11), 1772-1782, 2004 | 217 | 2004 |
| Pitch multiplication process R Venugopal, C Wasshuber US Patent 7,208,379, 2007 | 146 | 2007 |
| N+ poly on high-k dielectric for semiconductor devices R Venugopal, C Wasshuber, DB Scott US Patent 7,407,850, 2008 | 136 | 2008 |
| About single-electron devices and circuits C Wasshuber Technische Universität Wien, 1997 | 121 | 1997 |
| Forming a semiconductor structure in manufacturing a semiconductor device using one or more epitaxial growth processes C Wasshuber US Patent App. 10/714,366, 2005 | 96 | 2005 |
| A comparative study of single-electron memories C Wasshuber, H Kosina, S Selberherr IEEE Transactions on electron devices 45 (11), 2365-2371, 1998 | 94 | 1998 |
| Methods and apparatus for inducing stress in a semiconductor device C Wasshuber, KA Joyner US Patent 6,806,151, 2004 | 85 | 2004 |
| A single-electron device and circuit simulator C Wasshuber, H Kosina Superlattices and Microstructures 21 (1), 37-42, 1997 | 84 | 1997 |
| Single-electron memory C Wasshuber US Patent 6,487,112, 2002 | 53 | 2002 |
| Single-electronics-how it works. How it's used. How it's simulated C Wasshuber Proceedings International Symposium on Quality Electronic Design, 502-507, 2002 | 44 | 2002 |
| SETMOS: A novel true hybrid SET-CMOS high current Coulomb blockade oscillation cell for future nano-scale analog ICs S Mahapatra, V Pott, S Ecoffey, A Schmid, C Wasshuber, JW Tringe, ... IEEE International Electron Devices Meeting 2003, 29.7. 1-29.7. 4, 2003 | 33 | 2003 |
| Design of single‐electron systems through artificial evolution A Thompson, C Wasshuber International journal of circuit theory and applications 28 (6), 585-599, 2000 | 22 | 2000 |
| Spot-implant method for MOS transistor applications C Wasshuber US Patent 6,458,666, 2002 | 20 | 2002 |
| Evolutionary design of single electron systems A Thompson, C Wasshuber Proceedings. The Second NASA/DoD Workshop on Evolvable Hardware, 109-116, 2000 | 19 | 2000 |
| Recent advances and future prospects in single-electronics C Wasshuber Proceedings of the 40th annual Design Automation Conference, 274-275, 2003 | 15 | 2003 |
| Undulated moat for reducing contact resistance C Wasshuber US Patent 6,780,742, 2004 | 14 | 2004 |
| Inverted MOSFET process C Wasshuber US Patent 6,432,781, 2002 | 14 | 2002 |
Siegfried SelberherrInstitute for Microelectronics, TU WienVerified email at TUWien.ac.at