| Sulfur vacancies in monolayer MoS2 and its electrical contacts D Liu, Y Guo, L Fang, J Robertson Applied Physics Letters 103 (13), 183113, 2013 | 453 | 2013 |
| Theoretical insights into the mechanism of selective nitrate‐to‐ammonia electroreduction on single‐atom catalysts H Niu, Z Zhang, X Wang, X Wan, C Shao, Y Guo Advanced Functional Materials 31 (11), 2008533, 2021 | 406 | 2021 |
| Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017 | 336 | 2017 |
| Unraveling the origin of sulfur‐doped Fe‐N‐C single‐atom catalyst for enhanced oxygen reduction activity: effect of iron spin‐state tuning Z Chen, H Niu, J Ding, H Liu, PH Chen, YH Lu, YR Lu, W Zuo, L Han, ... Angewandte Chemie 133 (48), 25608-25614, 2021 | 270 | 2021 |
| Origin of the high work function and high conductivity of MoO3 Y Guo, J Robertson Applied Physics Letters 105 (22), 2014 | 240 | 2014 |
| A durable and pH-universal self-standing MoC–Mo2C heterojunction electrode for efficient hydrogen evolution reaction W Liu, X Wang, F Wang, K Du, Z Zhang, Y Guo, H Yin, D Wang Nature Communications 12 (1), 6776, 2021 | 235 | 2021 |
| Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures Y Guo, J Robertson Applied physics letters 108 (23), 2016 | 216 | 2016 |
| Computational Screening Single-Atom Catalysts Supported on g-CN for N2 Reduction: High Activity and Selectivity H Niu, X Wang, C Shao, Z Zhang, Y Guo ACS Sustainable Chemistry & Engineering 8 (36), 13749-13758, 2020 | 207 | 2020 |
| Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts Y Guo, D Liu, J Robertson Applied Physics Letters 106 (17), 2015 | 196 | 2015 |
| Single-Atom Rhodium on Defective g-C3N4: A Promising Bifunctional Oxygen Electrocatalyst H Niu, X Wan, X Wang, C Shao, J Robertson, Z Zhang, Y Guo ACS Sustainable Chemistry & Engineering 9 (9), 3590-3599, 2021 | 190 | 2021 |
| Calculation of TiO2 Surface and Subsurface Oxygen Vacancy by the Screened Exchange Functional H Li, Y Guo, J Robertson The Journal of Physical Chemistry C 119 (32), 18160-18166, 2015 | 183 | 2015 |
| Revealing the oxygen reduction reaction activity origin of single atoms supported on gC 3 N 4 monolayers: a first-principles study H Niu, X Wang, C Shao, Y Liu, Z Zhang, Y Guo Journal of materials chemistry A 8 (14), 6555-6563, 2020 | 175 | 2020 |
| Synthesis and stabilization of colloidal perovskite nanocrystals by multidentate polymer micelles S Hou, Y Guo, Y Tang, Q Quan ACS applied materials & interfaces 9 (22), 18417-18422, 2017 | 175 | 2017 |
| 3D behavior of Schottky barriers of 2D transition-metal dichalcogenides Y Guo, D Liu, J Robertson ACS applied materials & interfaces 7 (46), 25709-25715, 2015 | 172 | 2015 |
| Electronic and magnetic properties of Ti2O3, Cr2O3, and Fe2O3 calculated by the screened exchange hybrid density functional Y Guo, SJ Clark, J Robertson Journal of Physics: Condensed Matter 24 (32), 325504, 2012 | 156 | 2012 |
| Impact of oxygen exchange reaction at the ohmic interface in Ta 2 O 5-based ReRAM devices W Kim, S Menzel, DJ Wouters, Y Guo, J Robertson, B Roesgen, R Waser, ... Nanoscale 8 (41), 17774-17781, 2016 | 149 | 2016 |
| Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ... Science advances 3 (10), e1701661, 2017 | 142 | 2017 |
| Liquid metal for high-entropy alloy nanoparticles synthesis G Cao, J Liang, Z Guo, K Yang, G Wang, H Wang, X Wan, Z Li, Y Bai, ... Nature 619 (7968), 73-77, 2023 | 134 | 2023 |
| Materials selection for oxide-based resistive random access memories Y Guo, J Robertson Applied Physics Letters 105 (22), 2014 | 134 | 2014 |
| A Feasible Strategy for Identifying Single‐Atom Catalysts Toward Electrochemical NO‐to‐NH3 Conversion H Niu, Z Zhang, X Wang, X Wan, C Kuai, Y Guo Small 17 (36), 2102396, 2021 | 127 | 2021 |
John RobertsonProfessor of Electronics, University of CambridgeVerified email at eng.cam.ac.uk