| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang IEEE Electron Device Letters 38 (6), 732-735, 2017 | 272 | 2017 |
| Ferroelectric materials for neuromorphic computing S Oh, H Hwang, IK Yoo Apl Materials 7 (9), 2019 | 248 | 2019 |
| Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering A Kashir, H Kim, S Oh, H Hwang ACS Applied Electronic Materials 3 (2), 629-638, 2021 | 121 | 2021 |
| Defect Engineering to Achieve Wake‐up Free HfO2‐Based Ferroelectrics A Kashir, S Oh, H Hwang Advanced Engineering Materials 23 (1), 2000791, 2021 | 73 | 2021 |
| Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film S Oh, H Kim, A Kashir, H Hwang Applied Physics Letters 117 (25), 2020 | 68 | 2020 |
| Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing S Oh, J Song, IK Yoo, H Hwang IEEE Electron Device Letters 40 (7), 1092-1095, 2019 | 59 | 2019 |
| High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0. 5Zr0. 5O2 devices by control of oxygen-deficient layer M Yadav, A Kashir, S Oh, RD Nikam, H Kim, H Jang, H Hwang Nanotechnology 33 (8), 085206, 2021 | 37 | 2021 |
| A new approach to achieving strong ferroelectric properties in TiN/Hf0. 5Zr0. 5O2/TiN devices H Kim, A Kashir, S Oh, H Hwang Nanotechnology 32 (5), 055703, 2020 | 28 | 2020 |
| Effects of high pressure oxygen annealing on Hf0. 5Zr0. 5O2 ferroelectric device H Kim, A Kashir, S Oh, H Jang, H Hwang Nanotechnology 32 (31), 315712, 2021 | 14 | 2021 |
| Improvement of endurance and switching speed in Hf1− x Zr x O2 thin films using a nanolaminate structure H Jang, A Kashir, S Oh, H Hwang Nanotechnology 33 (39), 395205, 2022 | 9 | 2022 |
| Accurate Evaluation of High-k HZO/ZrO2 Films by Morphotropic Phase Boundary S Oh, H Jang, H Hwang IEEE Electron Device Letters, 2023 | 7 | 2023 |
| Composition optimization of HfxZr1-xO2 thin films to achieve the morphotrophic phase boundary for high-k dielectrics S Oh, H Jang, H Hwang Journal of Applied Physics 133 (15), 2023 | 7 | 2023 |
| Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications S Lee, SH Kim, S Oh, D Lee, H Hwang Advanced Electronic Materials 8 (5), 2101257, 2022 | 4 | 2022 |
| Improved turn-off speed and uniformity of atomic threshold switch device by AgSe electrode and bipolar pulse forming S Oh, S Lee, H Hwang IEEE Journal of the Electron Devices Society 9, 864-867, 2021 | 4 | 2021 |
| Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0. 5Zr0. 5O2/TiN device H Kim, A Kashir, H Jang, S Oh, M Yadav, S Lee, H Hwang Nano Express 3 (1), 015004, 2022 | 3 | 2022 |
| Multi-level synaptic weight device of vertical cross-point structure in three dimension and fabrication thereof S Oh, IK Yoo, H Hwang US Patent 10,418,417, 2019 | 3 | 2019 |
| Demonstration of 1 V Reliable FeRAM Operation: Vc Engineering Using Quasi-Chirality of Hf1–xZrxO2 in a Nanolaminate Structure H Jang, A Kashir, T Schenk, M Habibi, M Schuster, S Oh, S Müeller, ... ACS applied materials & interfaces 16 (41), 55627-55636, 2024 | 2 | 2024 |
| Volatile threshold switching devices for hardware security primitives: Exploiting intrinsic variability as an entropy source W Choi, O Kwon, J Lee, S Oh, S Heo, S Ban, Y Seo, D Kim, H Hwang Applied Physics Reviews 11 (2), 2024 | 2 | 2024 |
| Enhanced ON/OFF Ratio (4× 105) and Robust Endurance (> 1010) in an InGaZnO/HfxZr1-xO2 Ferroelectric Diode via Defect Engineering L Jung, S Oh, H Jang, K Lee, W Choi, H Hwang IEEE Transactions on Electron Devices 71 (3), 2238-2242, 2024 | 2 | 2024 |
| Effects of an interfacial dead layer on the ferroelectric HfZrOx films for low thermal budget S Oh, H Jang, H Hwang 2022 20th Non-Volatile Memory Technology Symposium (NVMTS), 1-5, 2022 | 2 | 2022 |
