| Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element P Xu, K Cheng, J Li, CH Lee US Patent 10,522,594, 2019 | 276 | 2019 |
| Desorption kinetics of GeO from GeO2/Ge structure SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi Journal of applied physics 108 (5), 2010 | 217 | 2010 |
| A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ... 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016 | 193 | 2016 |
| Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi ECS Transactions 19 (1), 165, 2009 | 188 | 2009 |
| Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio Microelectronic Engineering 86 (7-9), 1571-1576, 2009 | 182 | 2009 |
| High-Electron-Mobilityn-MOSFETs With Two-Step Oxidation CH Lee, T Nishimura, K Nagashio, K Kita, A Toriumi IEEE transactions on electron devices 58 (5), 1295-1301, 2011 | 158 | 2011 |
| Plasma-enhanced atomic layer deposition of ruthenium thin films OK Kwon, SH Kwon, HS Park, SW Kang Electrochemical and solid-state letters 7 (4), C46, 2004 | 144 | 2004 |
| Ge MOSFETs performance: Impact of Ge interface passivation CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi 2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010 | 122 | 2010 |
| High-electron-mobility Ge n-channel metal–oxide–semiconductor field-effect transistors with high-pressure oxidized Y2O3 T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi Applied physics express 4 (6), 064201, 2011 | 98 | 2011 |
| Record-high electron mobility in Ge n-MOSFETs exceeding Si universality CH Lee, T Nishimura, N Saido, K Nagashio, K Kita, A Toriumi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 84 | 2009 |
| Material potential and scalability challenges of germanium CMOS A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ... 2011 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2011 | 64 | 2011 |
| Vertically stacked nFET and pFET with dual work function A Reznicek, T Ando, J Zhang, CH Lee, P Hashemi US Patent 10,546,925, 2020 | 63 | 2020 |
| Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors C Hyun Lee, T Nishimura, T Tabata, DD Zhao, K Nagashio, A Toriumi Applied Physics Letters 102 (23), 2013 | 59 | 2013 |
| Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge CH Lee, C Lu, T Tabata, WF Zhang, T Nishimura, K Nagashio, A Toriumi 2013 IEEE International Electron Devices Meeting, 2.5. 1-2.5. 4, 2013 | 56 | 2013 |
| Full air-gap spacers for gate-all-around nanosheet field effect transistors T Ando, P Hashemi, CH Lee, A Reznicek, J Zhang US Patent 10,553,696, 2020 | 51 | 2020 |
| Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium C Lu, CH Lee, W Zhang, T Nishimura, K Nagashio, A Toriumi Journal of Applied Physics 116 (17), 2014 | 49 | 2014 |
| Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack C Lu, C Hyun Lee, W Zhang, T Nishimura, K Nagashio, A Toriumi Applied Physics Letters 104 (9), 2014 | 48 | 2014 |
| Junctionless Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated on ultrathin Ge-on-insulator substrate DD Zhao, T Nishimura, CH Lee, K Nagashio, K Kita, A Toriumi Applied physics express 4 (3), 031302, 2011 | 44 | 2011 |
| Formation of self-limited inner spacer for gate-all-around nanosheet FET J Zhang, T Ando, CH Lee, A Reznicek, P Hashemi US Patent 10,553,679, 2020 | 43 | 2020 |
| Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control- K Kita, SK Wang, M Yoshida, CH Lee, K Nagashio, T Nishimura, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 41 | 2009 |
Kosuke NagashioThe University of TokyoVerified email at material.t.u-tokyo.ac.jp
